• Title/Summary/Keyword: terahertz wave detector

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Enhanced Photoresponse of Plasmonic Terahertz Wave Detector Based on Silicon Field Effect Transistors with Asymmetric Source and Drain Structures

  • Ryu, Min Woo;Kim, Sung-Ho;Kim, Kyung Rok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.576-580
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    • 2013
  • We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.

Generation of Ultra-Wideband Terahertz Pulse by Photoconductive Antenna (광전도안테나에 의한 광대역테라헤르츠파의 발생특성)

  • Jin Yun-Sik;Kim Geun-Ju;Shon Chae-Hwa;Jung Sun-Shin;Kim Jeehyun;Jeon Seok-Gy
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.6
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    • pp.286-292
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    • 2005
  • Terahertz wave is a kind of electromagnetic radiation whose frequency lies in 0.1THz $\~$10THz range. In this paper, generation and detection characteristics of terahertz (THz) radiation by photoconductive antenna (PCA) method has been described. Using modern integrated circuit techniques, micron-sized dipole antenna has been fabricated on a low-temperature grown GaAs (LT-GaAs) wafer. A mode-locked Ti:Sapphire femtosecond laser beam is guided and focused onto photoconductive antennas (emitter and detector) to generate and measure THz pulses. Ultra-wide band THz radiation with frequencies between 0.1 THz and 3 THz was observed. Terahertz field amplitude variation with antenna bias voltage, pump laser power, pump laser wavelength and probe laser power was investigated. As a primary application example. a live clover leaf was imaged with the terahertz radiation.

Imaging Technique Based on Continuous Terahertz Waves for Nondestructive Inspection (비파괴검사를 위한 연속형 테라헤르츠 파 기반의 영상화 기술)

  • Oh, Gyung-Hwan;Kim, Hak-Sung
    • Journal of Sensor Science and Technology
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    • v.27 no.5
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    • pp.328-334
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    • 2018
  • The paper reviews an improved continuous-wave (CW) terahertz (THz) imaging system developed for nondestructive inspection, such as CW-THz quasi-time-domain spectroscopy (QTDS) and interferometry. First, a comparison between CW and pulsed THz imaging systems is reported. The CW-THz imaging system is a simple, fast, compact, and relatively low-cost system. However, it only provides intensity data, without depth and frequency- or time-domain information. The pulsed THz imaging system yields a broader range of information, but it is expensive because of the femtosecond laser. Recently, to overcome the drawbacks of CW-THz imaging systems, many studies have been conducted, including a study on the QTDS system. In this system, an optical delay line is added to the optical arm leading to the detector. Another system studied is a CW-THz interferometric imaging system, which combines the CW-THz imaging system and far-infrared interferometer system. These systems commonly obtain depth information despite the CW-THz system. Reportedly, these systems can be successfully applied to fields where pulsed THz is used. Lastly, the applicability of these systems for nondestructive inspection was confirmed.

Optical Characteristics of Bolometric Terahertz Sensor (볼로미터형 테라헤르츠 센서의 광학적 특성 연구)

  • Han, Myung Soo;Song, Woosub;Hong, Jung Taek;Lee, Donghee
    • Journal of Sensor Science and Technology
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    • v.27 no.5
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    • pp.335-339
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    • 2018
  • The optical characteristics of a terahertz (THz) antenna-coupled bolometer (ACB) detector were evaluated using a pulsed quantum cascade laser (QCL) and radiation blackbody sources. We investigated a method for measuring the responsivity and noise-equivalent power (NEP) of the THz detector using two different types of light sources. When using a QCL source with a frequency of 3 THz, the average responsivity of 24 devices was $1.44{\times}10^3V/W$ and the average NEP of those devices was $3.33{\times}10^{-9}W/{\surd}Hz$. The average responsivity and NEP as measured by blackbody source were $1.79{\times}10^5V/W$ and $6.51{\times}10^{-11}W/{\surd}Hz$, respectively, with the measured values varying depending on the light source. This was because the output power of each light source was different, with the laser source being driven by a pulse type wave and the blackbody source being driven by a continuous wave. The power input to the THz sensor was also different. Futhermore, the responsivity and NEP values measured using band pass filter (BPF) were similar to those measured when using only THz windows. It was found that ACB sensor responds normally in the THz region to both the laser and the blackbody source, and the method was confirmed to effectively evaluate the characteristics of the THz sensor.

Trends in Broadband Terahertz Detector Technology (광대역 테라헤르츠 검출 소자 기술 동향)

  • Shin, J.H.;Choi, D.H.;Lee, E.S.;Moon, K.W.;Park, D.W.;Joo, K.I.;Kim, M.G.;Choi, K.S.;Lee, I.M.;Park, K.H.
    • Electronics and Telecommunications Trends
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    • v.35 no.4
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    • pp.53-64
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    • 2020
  • The terahertz (THz) region lies in between the millimeter and infrared spectral bands. A THz wave has the characteristics of non-invasiveness and non-ionization due to low photon energies, while having high penetrability in dielectrics. In addition, since the resonance frequencies of various molecules are included in the THz band, research on the application of spectral analysis and non-destructive testing has been widely studied. Towards this end, the research and development of THz detectors has become increasingly important in order to assess their applications in different areas such as astronomy, security, industrial non-destructive evaluations, biological applications, and wireless communications. In this report, we summarize the operating principles, characteristics, and utilization of various broadband technologies in THz detection devices. Further, we introduce the development status of our Schottky barrier diode technology as one of the broadband THz detectors that can be easily adopted as direct detectors in many fields of applications.

Study of Condition Analysis and Diagnosis on Oil Paintings with Terahertz Imaging (테라헤르츠 이미징기법을 이용한 유화의 상태분석 및 진단)

  • Baek, Na Yeon;Song, You Na;Kim, Moon Jeong;Chung, Yong Jae;Lee, Han Hyoung
    • Journal of Conservation Science
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    • v.35 no.3
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    • pp.237-244
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    • 2019
  • In this study, we applied terahertz imaging technology to three Korean modern oil paintings ('Boy,' 'Girl,' and 'Hyehwadong Landscape'); investigated the types of inner layer information in the pictures that can be extracted with terahertz imaging technology; and analyzed the conditions for extracting them. The biggest problem in the terahertz imaging analysis we encountered was the image distortion caused by the change of the distance between the target surface and the terahertz detector, depending on the surface curvature of the target paintings. We then developed a 'working distance maintaining device' to solve this problem. As a result, the terahertz imaging technique was used to identify the base material characteristics and any patterns of damage inside, and presented the optimal conditions for identifying each characteristic. In addition, it was useful to employ the terahertz frequency-division image to check the characteristics of the background materials. To confirm coloring techniques such as brush strokes, it is effective to compare the maximum reflection peak image with the cross-section image; and to detect damage information inside the paintings that cannot be observed on the surface, to compare the cross-section image with the frequency-division image. On the other hand, according to the terahertz imaging analysis of the oil paintings, the internal structural damage marks of 'Boy' and 'Girl' were confirmed, and the artist's painting style was confirmed in 'Hyehwadong Landscape.' The above results are expected to be useful for the analysis and diagnosis of Korean modern oil paintings for their preservation.

A Tunable Terahertz Continuous-wave Source and Detector based on Photonics Devices and Application Technologies (포토닉스 기반 테라헤르츠 가변형 연속파 신호원/검출기 및 응용 기술)

  • Ryu, H.C.;Kim, N.J.;Moon, K.W.;Park, J.W.;Ko, H.S.;Han, S.P.;Kim, D.Y.;Park, K.H.
    • Electronics and Telecommunications Trends
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    • v.27 no.5
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    • pp.73-84
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    • 2012
  • 테라헤르츠파는 0.1~10THz 대역의 미개발 주파수 자원으로 전자기파 스펙트럼에서 적외선과 밀리미터파의 중간 영역에 위치한다. 전파의 투과성과 광파의 직진성을 동시에 가지고 있어 독특한 물리적 특성을 보유한 테라헤르츠파는 THz 소자, 분광, 영상 기술 등의 기초 과학과 의공학, 보안, 환경/우주, 정보통신 등의 응용 과학 분야에서 이미 그 중요성이 검증되어 향후 폭넓은 산업 응용으로 다양한 분야에서 새로운 형태의 시장이 형성될 것으로 기대된다. 이러한 테라헤르츠파 기술의 사회, 경제적 파급력을 극대화하기 위해서는 테라헤르츠 대역 소자의 특성을 향상시키고, 크기와 가격을 낮추는 것이 매우 중요하다. 본고에서는 크기와 가격을 낮출 수 있는 포토닉스 기반의 테라헤르츠 가변형 연속파 신호원 및 검출기 기술과 이를 기반으로 구현 가능한 응용 기술 동향에 대하여 기술하였다.

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Wireless Communication at 310 GHz using GaAs High-Electron-Mobility Transistors for Detection

  • Blin, Stephane;Tohme, Lucie;Coquillat, Dominique;Horiguchi, Shogo;Minamikata, Yusuke;Hisatake, Shintaro;Nouvel, Philippe;Cohen, Thomas;Penarier, Annick;Cano, Fabrice;Varani, Luca;Knap, Wojciech;Nagatsuma, Tadao
    • Journal of Communications and Networks
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    • v.15 no.6
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    • pp.559-568
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    • 2013
  • We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-data-rate communication is demonstrated using a frequency-multiplied source thanks to higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.

A Study on THz Generation and Detection Characteristics of InGaAs Semiconductor Epilayers (InGaAs 반도체 박막의 테라헤르쯔(THz) 발생 및 검출 특성 연구)

  • Park, D.W.;Kim, J.S.;Noh, S.K.;Ji, Young-Bin;Jeon, T.I.
    • Journal of the Korean Vacuum Society
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    • v.21 no.5
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    • pp.264-272
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    • 2012
  • In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.