• Title/Summary/Keyword: synaptic operation

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A New Basic Element for Neural Logic Functions and Capability in Circuit Applications

  • Omura, Yasuhisa
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.1
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    • pp.70-81
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    • 2002
  • This paper describes a new basic element which shows a synaptic operation for neural logic applications and shows function feasibility. A key device for the logic operation is the insulated-gate pn-junction device on SOI substrates. The basic element allows an interface quite compatible to that of conventional CMOS circuits and vMOS circuits.

뉴로모픽 시스템용 시냅스 트랜지스터의 최근 연구 동향

  • Nam, Jae-Hyeon;Jang, Hye-Yeon;Kim, Tae-Hyeon;Jo, Byeong-Jin
    • Ceramist
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    • v.21 no.2
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    • pp.4-18
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    • 2018
  • Lastly, neuromorphic computing chip has been extensively studied as the technology that directly mimics efficient calculation algorithm of human brain, enabling a next-generation intelligent hardware system with high speed and low power consumption. Three-terminal based synaptic transistor has relatively low integration density compared to the two-terminal type memristor, while its power consumption can be realized as being so low and its spike plasticity from synapse can be reliably implemented. Also, the strong electrical interaction between two or more synaptic spikes offers the advantage of more precise control of synaptic weights. In this review paper, the results of synaptic transistor mimicking synaptic behavior of the brain are classified according to the channel material, in order of silicon, organic semiconductor, oxide semiconductor, 1D CNT(carbon nanotube) and 2D van der Waals atomic layer present. At the same time, key technologies related to dielectrics and electrolytes introduced to express hysteresis and plasticity are discussed. In addition, we compared the essential electrical characteristics (EPSC, IPSC, PPF, STM, LTM, and STDP) required to implement synaptic transistors in common and the power consumption required for unit synapse operation. Generally, synaptic devices should be integrated with other peripheral circuits such as neurons. Demonstration of this neuromorphic system level needs the linearity of synapse resistance change, the symmetry between potentiation and depression, and multi-level resistance states. Finally, in order to be used as a practical neuromorphic applications, the long-term stability and reliability of the synapse device have to be essentially secured through the retention and the endurance cycling test related to the long-term memory characteristics.

Tunneling Field-Effect Transistors for Neuromorphic Applications

  • Lee, Jang Woo;Woo, Jae Seung;Choi, Woo Young
    • Journal of Semiconductor Engineering
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    • v.2 no.3
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    • pp.142-153
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    • 2021
  • Recent research on synaptic devices has been reviewed from the perspective of hardware-based neuromorphic computing. In addition, the backgrounds of neuromorphic computing and two training methods for hardware-based neuromorphic computing are described in detail. Moreover, two types of memristor- and CMOS-based synaptic devices were compared in terms of both the required performance metrics and low-power applications. Based on a review of recent studies, additional power-scalable synaptic devices such as tunnel field-effect transistors are suggested for a plausible candidate for neuromorphic applications.

Implementation of Neuromorphic System with Si-based Floating-body Synaptic Transistors

  • Park, Jungjin;Kim, Hyungjin;Kwon, Min-Woo;Hwang, Sungmin;Baek, Myung-Hyun;Lee, Jeong-Jun;Jang, Taejin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.210-215
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    • 2017
  • We have developed the neuromorphic system that can work with the four-terminal Si-based synaptic devices and verified the operation of the system using simulation tool and printed-circuit-board (PCB). The symmetrical current mirrors connected to the n-channel and p-channel synaptic devices constitute the synaptic integration part to express the excitation and the inhibition mechanism of neurons, respectively. The number and the weight of the synaptic devices affect the amount of the current reproduced from the current mirror. The double-stage inverters controlling delay time and the NMOS with large threshold voltage ($V_T$) constitute the action-potential generation part. The generated action-potential is transmitted to next neuron and simultaneously returned to the back gate of the synaptic device for changing its weight based on spike-timing-dependent-plasticity (STDP).

Active vibration isolation of a hydraulic system using the hetero-synaptic neural network (헤테로-시넵틱 신경회로망을 이용한 유압시스템의 진동제어)

  • 정만실;조동우
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1995.04b
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    • pp.273-277
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    • 1995
  • Many hudraulic components have nonlinearities to some extent. These nonlinearities often cause the time delay, thus degrading the performance of the hydraulic control systems and making it difficult to modelthem. In this paper, a new vibration isolation control algorithm that eliminates the necessity of a sophiscated modeling of hydraulic system was proposed. The algotithm is a hybrid type control shecheme consisting of a linear controller and a hetero-synaptic neural network controller. Using this control scheme, simulations and experiments were performed for 1 DOF(Degree of freedom) and 2 DOF vibration isolation. The hybrid type control algorithm can isolate the base vibration signifcantly rather than linear control algorithm. And from the weights in hetero-synaptic neural network, we can get the 2nd equivalent differentialmodel of the hydraulic control system with on-line control operation. This equivalent model provides us with much information, such as stability and the characteristics of the control system.

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Analogue-Digital Hybrid Circuit for an Adaptive Fuzzy Network

  • Han, Il-Song
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 1993.06a
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    • pp.838-841
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    • 1993
  • This paper describes a fuzzy network circuit of analogue and digital mixed operation. The circuits are suggested for membership function, MIN function and normalization function using either linear voltage-controlled MOSFET resistance or pulse stream operation. The analogue-digital hybrid fuzzy hardware is extensible to the fuzzy-neural network as its basic configurations are already used in URAN-I of 135,424 synaptic connections.

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Design of a Silicon Neuron Circuit using a 0.18 ㎛ CMOS Process (0.18 ㎛ CMOS 공정을 이용한 실리콘 뉴런 회로 설계)

  • Han, Ye-Ji;Ji, Sung-Hyun;Yang, Hee-Sung;Lee, Soo-Hyun;Song, Han-Jung
    • Journal of the Korean Institute of Intelligent Systems
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    • v.24 no.5
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    • pp.457-461
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    • 2014
  • Using $0.18{\mu}m$ CMOS process silicon neuron circuit of the pulse type for modeling biological neurons, were designed in the semiconductor integrated circuit. Neuron circuiSt providing is formed by MOS switch for initializing the input terminal of the capacitor to the input current signal, a pulse signal and an amplifier stage for generating an output voltage signal. Synapse circuit that can convert the current signal output of the input voltage signal, using a bump circuit consisting of NMOS transistors and PMOS few. Configure a chain of neurons for verification of the neuron model that provides synaptic neurons and two are connected in series, were performed SPICE simulation. Result of simulation, it was confirmed the normal operation of the synaptic transmission characteristics of the signal generation of nerve cells.

A Biological Fuzzy Multilayer Perceptron Algorithm

  • Kim, Kwang-Baek;Seo, Chang-Jin;Yang, Hwang-Kyu
    • Journal of information and communication convergence engineering
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    • v.1 no.3
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    • pp.104-108
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    • 2003
  • A biologically inspired fuzzy multilayer perceptron is proposed in this paper. The proposed algorithm is established under consideration of biological neuronal structure as well as fuzzy logic operation. We applied this suggested learning algorithm to benchmark problem in neural network such as exclusive OR and 3-bit parity, and to digit image recognition problems. For the comparison between the existing and proposed neural networks, the convergence speed is measured. The result of our simulation indicates that the convergence speed of the proposed learning algorithm is much faster than that of conventional backpropagation algorithm. Furthermore, in the image recognition task, the recognition rate of our learning algorithm is higher than of conventional backpropagation algorithm.

Modular Design of Analog Hopfield Network (아날로그 홉필드 신경망의 모듈형 설계)

  • Dong, Sung-Soo;Park, Seong-Beom;Lee, Chong-Ho
    • Proceedings of the KIEE Conference
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    • 1991.11a
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    • pp.189-192
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    • 1991
  • This paper presents a modular structure design of analog Hopfield neural network. Each multiplier consists of four MOS transistors which are connected to an op-amp at the front end of a neuron. A pair of MOS transistor is used in order to maintain linear operation of the synapse and can produce positive or negative synaptic weight. This architecture can be expandable to any size neural network by forming tree structure. By altering the connections, other nework paradigms can also be implemented using this basic modules. The stength of this approach is the expandability and the general applicability. The layout design of a four-neuron fully connected feedback neural network is presented and is simulated using SPICE. The network shows correct retrival of distorted patterns.

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Memristors based on Al2O3/HfOx for Switching Layer Using Single-Walled Carbon Nanotubes (단일 벽 탄소 나노 튜브를 이용한 스위칭 레이어 Al2O3/HfOx 기반의 멤리스터)

  • DongJun, Jang;Min-Woo, Kwon
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.633-638
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    • 2022
  • Rencently, neuromorphic systems of spiking neural networks (SNNs) that imitate the human brain have attracted attention. Neuromorphic technology has the advantage of high speed and low power consumption in cognitive applications and processing. Resistive random-access memory (RRAM) for SNNs are the most efficient structure for parallel calculation and perform the gradual switching operation of spike-timing-dependent plasticity (STDP). RRAM as synaptic device operation has low-power processing and expresses various memory states. However, the integration of RRAM device causes high switching voltage and current, resulting in high power consumption. To reduce the operation voltage of the RRAM, it is important to develop new materials of the switching layer and metal electrode. This study suggested a optimized new structure that is the Metal/Al2O3/HfOx/SWCNTs/N+silicon (MOCS) with single-walled carbon nanotubes (SWCNTs), which have excellent electrical and mechanical properties in order to lower the switching voltage. Therefore, we show an improvement in the gradual switching behavior and low-power I/V curve of SWCNTs-based memristors.