• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.95-96
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• 2009

A fully depleted capacitorless 1-transistor dynamic random access memory (FD 1T-DRAM) based on a sSOI strained-silicon-on-insulator) wafer was investigated. The fabricated device showed excellent electrical characteristics of transistor such as low leakage current, low subthreshold swing, large on/off current ratio, and high electron mobility. The FD sSOI 1T-DRAM can be operated as memory device by the floating body effect when the substrate bias of -15 V is applied, and the FD sSOI 1T-DRAM showed large sensing margin and several milli seconds data retention time.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1412-1413
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• 2011

Effects of thermal annealing on electrical characteristics of thin film transistors (TFTs) using hydrogenated zinc oxide (ZnO:H) films as active channel were extensively investigated. The ZnO:H films were deposited at room temperature by RF sputtering. The device parameters of the ZnO:H-based TFTs, such as threshold voltage ($V_{th}$), subthreshold swing (S.S.), and on-off current ratio ($I_{on}/I_{off}$), were characterized in terms of the annealing temperature as well as the gas flow ratio of $H_2$/Ar.

• Journal of Electrical Engineering and Technology
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• v.12 no.6
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• pp.2353-2358
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• 2017

A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1249-1252
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• 2007

We have fabricated 3.5” transparent AM-OLED panel driven by PEALD grown ZnO TFT. The performance of ZnO thin film transistor was improved by adapting top gate structure, protection layer for ZnO from photolithography process, optimizing temperature and plasma power of ZnO growth process. The ZnO-TFT has a mobility of $8.9cm^2/V.s$, a subthreshold swing of 0.95V, and an on/off ratio of $10^7$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.168-168
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• 2006

Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.119-122
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• 2008

In this paper, we describe the current status and issues of the oxide thin-film transistors (OTFTs), which attract much attention as an emerging new backplane technology replacing conventional silicon-based TFTs technologies. First, the unique benefits of OTFTs will be presented as a backplane for large-sized AMOLED including note-book PC, second TV and HD-TV. And then, the state-of-the-art transistor performance and uniformity characteristics of OTFTs will be highlighted. The obtained a-IGZO TFTs exhibited the field-effect mobility of $18\;cm^2/Vs$, threshold voltage of 1.8 V, on/off ratio of $10^9$, and subthreshold gate swing of 0.28 V/decade. In addition, the world largest-sized 12.1-inch WXGA active-matrix organic light emitting diode (AMOLED) display is demonstrated using indium-gallium-zinc oxide (IGZO) TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.439-442
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• 2006

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of $160^{\circ}C$ with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of $10\;{\mu}m$ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.356-356
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• 2010

In this paper, Poly silicon thin-film transistors (poly-Si TFTs) with employed the SPC (Solid phase crystallization) and ELA (Excimer laser annealing) methods on glass panel substrate are fabricated to investigate the electrical poperies. Poly-Si TFTs have recess-channel structure with formated source/drain regions by LPCVD n+ poly Si in low $650^{\circ}C$ temperature. the ELA-TFT show higher on/off current ratio and subthreshold swing than a-Si and SPC TFT that therefore, these results showed that the ELA-TFT might be beneficial for practical embedded TFT memory device application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.148-148
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• 2010

Measuring the a-IGZO TFTs with various temperatures was found to induce a threshold voltage shift and a change of the subthreshold gate voltage swing. Characteristic change is dependant on a material of the substrate at the temperature from $20^{\circ}C$ to $100^{\circ}C$. The threshold voltage was shifted to the left from -2.7V to -61V on SiO2/galss. But, as the temperature increases form $20^{\circ}C$ to $100^{\circ}C$. the threshold voltage was shifted to the right from 0.85V to 2.45V.