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http://dx.doi.org/10.5370/JEET.2017.12.6.2353

Dynamic Response Behavior of Femtosecond Laser-Annealed Indium Zinc Oxide Thin-Film Transistors  

Shan, Fei (College of Electrical and Computer Engineering, Chungbuk National University)
Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
Publication Information
Journal of Electrical Engineering and Technology / v.12, no.6, 2017 , pp. 2353-2358 More about this Journal
Abstract
A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.
Keywords
IZO thin-film transistor; Femtosecond laser; Dynamic response; Pre-annealing; Solution process;
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