한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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The Dependence of Mechanical Strain on a-Si:H TFTs and Metal Connection Fabricated on Flexible Substrate

  • Lee, M.H. (Display Technology Center, Industrial Technology Research Institute (DTC/ITRI)) ;
  • Ho, K.Y. (Display Technology Center, Industrial Technology Research Institute (DTC/ITRI)) ;
  • Chen, P.C. (Display Technology Center, Industrial Technology Research Institute (DTC/ITRI)) ;
  • Cheng, C.C (Display Technology Center, Industrial Technology Research Institute (DTC/ITRI)) ;
  • Yeh, Y.H. (Display Technology Center, Industrial Technology Research Institute (DTC/ITRI))
  • Published : 2006.08.22
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Abstract

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of $160^{\circ}C$ with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of $10\;{\mu}m$ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

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