DOI QR코드

DOI QR Code

Dynamic Response Behavior of Femtosecond Laser-Annealed Indium Zinc Oxide Thin-Film Transistors

  • Shan, Fei (College of Electrical and Computer Engineering, Chungbuk National University) ;
  • Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
  • Received : 2017.05.15
  • Accepted : 2017.08.05
  • Published : 2017.11.01

Abstract

A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

Keywords

Acknowledgement

Supported by : National Research Foundation of Korea (NRF), Korea Institute of Energy Technology Evaluation and Planning (KETEP), Institute for Information & communications Technology Promotion (IITP)

References

  1. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor," Science, vol. 300, no. 5623, pp. 1269-1272, May 2003. https://doi.org/10.1126/science.1083212
  2. M. Sato and A. J. Sievers, "Direct observation of the discrete character of intrinsic localized modes in an antiferromagnet," Nature, vol. 432, no. 7016, pp.486-488, Nov. 2004. https://doi.org/10.1038/nature03038
  3. J. F. Wager, B. Yeh, R. L. Hoffman, and D. A. Keszler, "An amorphous oxide semiconductor thin-film transistor route to oxide electronics," Curr Opin Solid St M, vol. 18, no. 2, pp. 53-61, Apr. 2014. https://doi.org/10.1016/j.cossms.2013.07.002
  4. H. Sasabe and J. Kido, "Development of high performance OLEDs for general lighting," J Mater Chem C, vol. 1, no. 9, pp. 1699-1707, Jan. 2013. https://doi.org/10.1039/c2tc00584k
  5. J. S. Park, T. W. Kim, D. Stryakhilev, J. S. Lee, S. G. An, Y. S. Pyo, D. B. Lee, Y. G. Mo, D. U. Jin, and H. K. Chung, "Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors," Appl Phys Lett, vol. 95, no. 1, p. 013503, June 2009. https://doi.org/10.1063/1.3159832
  6. D. H. Lee, Y. J. Chang, G. S. Herman, and C. H. Chang, "A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors," Adv Mater, vol. 19, no. 6, pp. 843-847, Feb. 2007. https://doi.org/10.1002/adma.200600961
  7. H.-W. Park, K. Park, J.-Y. Kwon, D. Choi, and K.-B. Chung, "Effect of Active Layer Thickness on Device Performance of Tungsten-Doped InZnO Thin-Film Transistor," IEEE T Electron Dev, vol. 64, no. 1, pp. 159-163, Jan. 2017.
  8. B. Yaglioglu, H. Y. Yeom, R. Beresford, and D. C. Paine, "High-mobility amorphous In2O3-10wt%ZnO thin film transistors," Appl Phys Lett, vol. 89, no. 6, p. 062103, June 2006. https://doi.org/10.1063/1.2335372
  9. G. J. Lee, J. Kim, J.-H. Kim, S. M. Jeong, J. E. Jang, and J. Jeong, "High performance, transparent a-IGZO TFTs on a flexible thin glass substrate," Semicond Sci Tech, vol. 29, no. 3, p. 035003, Jan. 2014. https://doi.org/10.1088/0268-1242/29/3/035003
  10. S. Morawiec, M. J. Mendes, S. A. Filonovich, T. Mateus, S. Mirabella, H. Aguas, I. Ferreira, F. Simone, E. Fortunato, and R. Martins, "Broadband photocurrent enhancement in a-Si: H solar cells with plasmonic back reflectors," Opt Express, vol. 22, no. 104, pp. A1059-A1070, June 2014. https://doi.org/10.1364/OE.22.0A1059
  11. L. Hong, X. Wang, H. Zheng, H. Wang, and H. Yu, "Femtosecond laser fabrication of large-area periodic surface ripple structure on Si substrate," Appl Surf Sci, vol. 297, no., pp. 134-138, Apr. 2014. https://doi.org/10.1016/j.apsusc.2014.01.100
  12. C. Lee, P. Srisungsitthisunti, S. Park, S. Kim, X. Xu, K. Roy, D. B. Janes, C. Zhou, S. Ju, and M. Qi, "Control of current saturation and threshold voltage shift in indium oxide nanowire transistors with femtosecond laser annealing," Acs Nano, vol. 5, no. 2, pp. 1095-1101, Jan. 2011. https://doi.org/10.1021/nn102723w
  13. J.-M. Shieh, Z.-H. Chen, B.-T. Dai, Y.-C. Wang, A. Zaitsev, and C.-L. Pan, "Near-infrared femtosecond laser-induced crystallization of amorphous silicon," Appl Phys Lett, vol. 85, no. 7, pp. 1232-1234, June 2004. https://doi.org/10.1063/1.1782267
  14. Y. J. Tak, D. H. Yoon, S. Yoon, U. H. Choi, M. M. Sabri, B. D. Ahn, and H. J. Kim, "Enhanced Electrical Characteristics and Stability Via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In-Ga-Zn-O Thin-Film Transistors," Acs Appl Mater Inter, vol. 6, no. 9, pp. 6399-6405, Apr. 2014. https://doi.org/10.1021/am405818x
  15. J. M. Kwon, J. Jung, Y. S. Rim, D. L. Kim, and H. J. Kim, "Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thinfilm transistors using hydrogen peroxide," Acs Appl Mater Inter, vol. 6, no. 5, pp. 3371-3377, Feb. 2014. https://doi.org/10.1021/am4054139
  16. Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M. S. Oh, G.-R. Yi, Y.-Y. Noh, and S. K. Park, "Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films," Nature, vol. 489, no. 7414, pp. 128-132, Sep. 2012. https://doi.org/10.1038/nature11434
  17. D. J. Kim, D. L. Kim, Y. S. Rim, C. H. Kim, W. H. Jeong, H. S. Lim, and H. J. Kim, "Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process," Acs Appl Mater Inter, vol. 4, no. 8, pp. 4001-4005, July 2012. https://doi.org/10.1021/am3008278
  18. Y. Wang, X. W. Sun, G. K. L. Goh, H. V. Demir, and H. Y. Yu, "Influence of channel layer thickness on the electrical performances of inkjet-printed In-Ga-Zn oxide thin-film transistors," IEEE T Electron Dev, vol. 58, no. 2, pp. 480-485, Feb. 2011. https://doi.org/10.1109/TED.2010.2091131
  19. G. E. Park, J. Shin, D. H. Lee, T. W. Lee, H. Shim, M. J. Cho, S. Pyo, and D. H. Choi, "Acene-Containing Donor?Acceptor Conjugated Polymers: Correlation between the Structure of Donor Moiety, Charge Carrier Mobility, and Charge Transport Dynamics in Electronic Devices," Macromolecules, vol. 47, no. 11, pp. 3747-3754, May 2014. https://doi.org/10.1021/ma500733y
  20. M. Jea, A. Kumar, H. Cho, D. Yang, H. Shim, A. K. Palai, and S. Pyo, "An organic microcrystal arrayembedded layer: highly directional alternating p-and n-channels for ambipolar transistors and inverters," J Mater Chem C, vol. 2, no. 20, pp. 3980-3987, Feb. 2014. https://doi.org/10.1039/C4TC00042K
  21. X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, "Large-swing a-IGZO inverter with a depletion load induced by laser annealing," IEEE Electr Device L, vol. 35, no. 10, pp.1034-1036, Aug. 2014. https://doi.org/10.1109/LED.2014.2345412
  22. H. Na, H. Cho, K. Sim, H. Shim, S.-J. Kim, and S. Pyo, "Electrical responses of short-channel organic transistor prepared by solution-processed organic crystal wire mask," Org Electron, vol. 15, no. 11, pp. 2728-2733, Nov. 2014. https://doi.org/10.1016/j.orgel.2014.07.031
  23. J. Kwon, H. Na, A. K. Palai, A. Kumar, U. Jeong, S. Cho, and S. Pyo, "Utilization of simply alkylated diketopyrrolopyrrole derivative as a p-channel semiconductor for organic devices," Synthetic Met, vol. 209, no., pp. 240-246, Nov. 2015. https://doi.org/10.1016/j.synthmet.2015.07.015
  24. J. Y. Kim, D. S. Yang, J. Shin, D. Bilby, K. Chung, H. A. Um, J. Chun, S. Pyo, M. J. Cho, and J. Kim, "High-Performing Thin-Film Transistors in Large Spherulites of Conjugated Polymer Formed by Epitaxial Growth on Removable Organic Crystalline Templates," Acs Appl Mater Inter, vol. 7, no. 24, pp. 13431-13439, June 2015. https://doi.org/10.1021/acsami.5b02265
  25. G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, "Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors," J Appl Phys, vol. 87, no. 9, pp. 4456-4463, Apr. 2000. https://doi.org/10.1063/1.373091