• 한국통신학회논문지
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• 제16권9호
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• pp.862-876
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• 1991

본 논문에서는 N-선로 결합 구조의 등가 이미턴스 산출식을 N-선로 결합시스템의 normal mode 정수로 표현하였다 제안한 산출식은 다양한 결합 구조 즉 방향성 결합기, DC 블럭, 대역통과/대역소거 여파기 및 기타 균일하게 결합된 형태인 여파기 등에 이용될 수 있도록 일반화 되었으며 이들 계산식은 준-TEM 모드로 가정한 결과이다. 이를 이용하여 임의의 임피던스로 종단한 일반적인 4-포트 결합 선로에서 정의된 산란정수를 구하여 입, 출력 포트에 접속된 임피던스에 정합시키는 최척 선로 규격을 구하는 과정을 제시하였다. 제시된 방법을 적용하여 복수 마이크로스트립 결합 선로인 3-선 2-포트 대역소거 여파기의 주파수 특성을 기존의 방법과 비교하여 일치함을 확인하고 5-선 4-포트 구조를 테프론(비유전율 $e$r=2.55) 기판(두께 h=1.588mm) 에 중심 주파수 4 GHz로 설계하였다. 설계 수치에 따른 회로를 제작하여 측정한 실험 결과는 설계시 얻어진 주파수 특성 이론치에 근접하였다.

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.708-712
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• 2002

The crystallization of amorphous $\alpha$-Fe$_2$O$_3$/$\alpha$-AI$_2$O$_3$(0001) thin films during thermal annealing in air has been studied using real-time synchrotron x-ray scattering. The well aligned (0.02$^{\circ}$/ FWHM) $\alpha$-Fe$_2$O$_3$and Fe$_3$O$_4$interfacial crystallites (50- -thick) coexist on the $\alpha$-AI$_2$O$_3$(0001) in the sputter-grown amorphous films at room temperature. The amorphous precursor is crystallized to the epitaxial $\alpha$-Fe$_2$O$_3$grains in three steps with annealing temperature; i ) the growth of the well aligned $\alpha$-Fe$_2$O$_3$interfacial crystallites, together with the transformation of the Fe$_3$O$_4$crystallites to the $\alpha$-Fe$_2$O$_3$ crystallites, ii ) the growth of the less aligned (3.08$^{\circ}$ FWHM)$\alpha$-Fe$_2$O$_3$grains on the well aligned grains (＞40$0^{\circ}C$), and iii) the nucleation of the other less aligned (1.39$^{\circ}$ FWHM) $\alpha$-Fe$_2$O$_3$grains directly on the $\alpha$-AI$_2$O$_3$substrate (＞$600^{\circ}C$). The effective thickness thinner than 230 may be very useful for enhancing the epitaxial quality of $\alpha$-Fe$_2$O$_3$/AI$_2$O$_3$(0001) thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.723-727
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1373-1376
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/TPD/$Eu(TTA)_3(phen)/Alq_3/Al$ structures were fabricated by evaporation method, where aromatic diamine(TPD) were used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and tris(8-hydroxyquinoline)Aluminum ($Alq_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of $Eu(TTA)_3(phen)$ with a variety thickness was investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of $Eu(TTA)_3(phen)$. I-V characteristics of this structure show that turn-on voltage was 9V and current density of $0.01A/cm^2$ at a dc drive voltage of 9V. Details on the explanation of electrical transport phenomena of these structures with I-V characteristics using the trapped-charge-limited current model will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.787-790
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• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• 한국세라믹학회지
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• 제34권2호
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• pp.188-194
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• 1997

TMCS(Trimethylchlorosilane)로 표면개질한 습윤겔을 에탄올에 재분산시켜 코팅용 재분산 실리카 졸을 제조하였고 제조된 졸을 실리콘 기판에 스핀 코팅한 후 상압 하에서 건조(8$0^{\circ}C$) 및 열처리(>25$0^{\circ}C$)하여 열처리온도에 따른 박막의 물성 변화를 관찰하였다. 습윤겔의 재분산시 안정한 재분산 실리카 졸의 제조를 위한 최적 재분산 조건을 습윤겔:에탄올=1g110$m\ell$로 하였고, 이렇게 제조된 재분산 실리카 졸의 농도와 점도는 각각 0.11 M, 2.0-2.2cP였으며 평균 졸 입자크기는 약 30nm정도였다. 1500rpm, 10회 스핀 코팅한 후 8$0^{\circ}C$에서 2시간 건조, 45$0^{\circ}C$에서 2시간 열처리에 의하여 굴절율이 약 1.14, 두께가 400nm정도인 균열이 없는 박막을 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.332-332
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• 2010

We have successfully demonstrated the inkjet printing method to create $Al_2O_3$ films withouWe have successfully demonstrated the inkjet printing method to create $Al_2O_3$ films without a high temperature sintering process. In order to remove the coffee ring effect in the ink drop, we have introduced a co-solvent system in order to create Marangoni flow in the ink drop, which leads to the dense packing of ceramic powders on the substrate during inkjet process. The packing density of the Inkjet-printed $Al_2O_3$ films is around 60% (max. 70%) which is very high compared to the value obtained from the same material films by other conventional methods such as film casting, dip coating process, etc. The voids inside the films (which are around 40% of the entire film volume) are filled with the polymer resin (Cyanate ester) by the infiltration process. This resin infiltration is also implemented by the inkjet printing process right after the Ah03 film ink-jetting process. The microstructures of the printed $Al_2O_3$ films are investigated by Scanning Electron Microscope (SEM) to understand the degree of packing density in the printed films. The inkjet-printed $Al_2O_3$ films have been characterized to investigate its thickness and roughness. Quality factor of the printed $Al_2O_3$ film is also measured to be over 300 at 1MHz.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.543-551
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• 2012

In this study, transparent conducting Al-doped Zinc Oxide (AZO) films with a thickness of 150 nm were prepared on corning glass substrate by the RF magnetron sputtering with using a Al-doped zinc oxide (AZO), ($Al_2O_3$: 2 wt%) target at room temperature. This study investigated the effect of rapid thermal annealing temperature and oxygen ambient on structural, electrical and optical properties of Al-doped zinc oxide (AZO) thin films. The films were annealed at temperatures ranging from 400 to $700^{\circ}C$ by using Rapid thermal equipment in oxygen ambient. The effect of RTA treatment on the structural properties were studied by x-ray diffraction and atomic force microscopy. It is observed that the Al-doped zinc oxide (AZO) thin film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas reveals the strongest XRD emission intensity and narrowest full width at half maximum among the temperature studied. The enhanced UV emission from the film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas is attributed to the improved crystalline quality of Al-doped zinc oxide (AZO) thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.