Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07b
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- Pages.787-790
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- 2003
Characteristic evaluations and production of triode magnetron sputtering system
Triode magnetron sputtering system의 제작 및 특성평가
- Kim, H.H. (Doowon Technical College) ;
- Lee, M.Y. (Doowon Technical College) ;
- Kim, K.T. (Doowon Technical College) ;
- Yoon, S.H. (Doowon Technical College) ;
- Yoo, H.K. (SAIT FED Project) ;
- Kim, J.M. (SAIT FED Project) ;
- Park, C.H. (Chungbuk National Univ.) ;
- Lim, K.J. (Chungbuk National Univ.)
- 김현후 (두원공대 전자과) ;
- 이무영 (두원공대 전자과) ;
- 김광태 (두원공대 전자과) ;
- 윤상현 (두원공대 전자과) ;
- 유환구 ;
- 김종민 ;
- 박철현 (충북대학교 전기공학과) ;
- 임기조 (충북대학교 전기공학과)
- Published : 2003.07.10
Abstract
A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of