Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Crystallization and Electrical Properties of SBM Thin Films by IBSD Process

IBSD법에 의한 SBN60 강유전체 박막의 배향 및 전기적 특성

  • Jeong, Seong-Won (School of Metallurgical and Materials Engineering, Yeungnam University) ;
  • Jang, Jae-Hoon (School of Metallurgical and Materials Engineering, Yeungnam University) ;
  • Lee, Hee-Young (School of Metallurgical and Materials Engineering, Yeungnam University)
  • 정성원 (영남대학교 재료금속공학부) ;
  • 장재훈 (영남대학교 재료금속공학부) ;
  • 이희영 (영남대학교 재료금속공학부)
  • Published : 2004.07.05
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Abstract

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

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