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http://dx.doi.org/10.4313/JKEM.2012.25.7.543

Preparation and Evaluation of the Properties of Al-doped Zinc Oxide (AZO) Films Deposition by Rapid Thermal Annealing  

Kim, Sung-Jin (Department of Advanced Materials Science and Engineering, Yonsei University)
Choi, Kyoon (Ceramic Engineering Center, Korea Institute of Ceramic Engineering and Technology)
Choi, Se-Young (Department of Advanced Materials Science and Engineering, Yonsei University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.7, 2012 , pp. 543-551 More about this Journal
Abstract
In this study, transparent conducting Al-doped Zinc Oxide (AZO) films with a thickness of 150 nm were prepared on corning glass substrate by the RF magnetron sputtering with using a Al-doped zinc oxide (AZO), ($Al_2O_3$: 2 wt%) target at room temperature. This study investigated the effect of rapid thermal annealing temperature and oxygen ambient on structural, electrical and optical properties of Al-doped zinc oxide (AZO) thin films. The films were annealed at temperatures ranging from 400 to $700^{\circ}C$ by using Rapid thermal equipment in oxygen ambient. The effect of RTA treatment on the structural properties were studied by x-ray diffraction and atomic force microscopy. It is observed that the Al-doped zinc oxide (AZO) thin film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas reveals the strongest XRD emission intensity and narrowest full width at half maximum among the temperature studied. The enhanced UV emission from the film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas is attributed to the improved crystalline quality of Al-doped zinc oxide (AZO) thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size.
Keywords
Al-doped ZnO (AZO) thin films; Rapid thermal annealing; RF magnetron sputtering; XRD;
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