• Tribology and Lubricants
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• v.33 no.3
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• Mycobiology
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• v.38 no.2
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• pp.97-101
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• 2010

Calocybe indica, a tropical edible mushroom, is popular because it has good nutritive value and it can be cultivated commercially. The current investigation was undertaken to determine a suitable substrate and the appropriate thickness of casing materials for the cultivation of C. indica. Optimum mycelial growth was observed in coconut coir substrate. Primordia initiation with the different substrates and casing materials was observed between the 13th and 19th day. The maximum length of stalk was recorded from sugarcane leaf, while diameter of stalk and pileus, and thickness of pileus were found in rice straw substrate. The highest biological and economic yield, and biological efficiency were also obtained in the rice straw substrate. Cow dung and loamy soil, farm-yard manure, loamy soil and sand, and spent oyster mushroom substrates were used as casing materials to evaluate the yield and yield-contributing characteristics of C. indica. The results indicate that the number of effective fruiting bodies, the biological and economic yield, and the biological efficiency were statistically similar all of the casing materials used. The maximum biological efficiency was found in the cow dung and loamy soil casing material. The cow dung and loamy soil (3 cm thick) was the best casing material and the rice straw was the best substrate for the commercial cultivation of C. indica.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.347-350
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• 2001

A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.634-639
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• 2002

Using laser ablation technique carbon thin films were deposited on Si(100) substrate as a function of substrate temperature. In this study, the surface morphologic, structural and field emission properties of these carbon thin films were investigated using Raman spectroscopy, scanning electron microscopy, and a diode technique, respectively. With increasing of the substrate temperature, the surface morphologies were changed significantly. Moreover, the intensity of D-band and the full width at half maximum of these bands were dependent on substrate temperatures. As the substrate temperature was increased, the field emission properties were improved. As the result, we find that the field emission properties of the films were changed significantly with the substrate temperature and structural features of carbon than films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.7-11
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• 2011

Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.818-821
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• 2002

We investigated the evolution of magnetic property with varying palladium (Pd) contents and elevating substrate temperatures up to 200 $^{\circ}C$ during dc-sputtering. We observed that saturation magnetization (Ms), remanence and anisotropic magnetoresistance (AMR) ratio decrease with Pd contents in the case of keeping the substrate temperature at 3$0^{\circ}C$. However they increase by adding 2 %Pd, then decrease above 3 %Pd when we keep the substrate temperature at 20$0^{\circ}C$. Coercivity does not change with Pd contents. Our results imply that we may tune the Ms and AMR with Pd contents and substrate temperature in permalloy films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.33-38
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• 2021

Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

• Advances in materials Research
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• v.9 no.1
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• pp.33-48
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• 2020

With the use of differential quadrature method (DQM), forced vibrations and resonance frequency analysis of functionally graded (FG) nano-size beams rested on elastic substrate have been studied utilizing a shear deformation refined beam theory which contains shear deformations influence needless of any correction coefficient. The nano-size beam is exposed to uniformly-type dynamical loads having partial length. The two parameters elastic substrate is consist of linear springs as well as shear coefficient. Gradation of each material property for nano-size beam has been defined in the context of Mori-Tanaka scheme. Governing equations for embedded refined FG nano-size beams exposed to dynamical load have been achieved by utilizing Eringen's nonlocal differential law and Hamilton's rule. Derived equations have solved via DQM based on simply supported-simply supported edge condition. It will be shown that forced vibrations properties and resonance frequency of embedded FG nano-size beam are prominently affected by material gradation, nonlocal field, substrate coefficients and load factors.