• Journal of the Korean Chemical Society
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• v.52 no.2
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• pp.164-168
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• 2008

CaWO4 crystals were synthesized by a microemulsion method. Various sizes and shapes of CaWO4 were obtained by changing the molar ratio (w) of H2O to CTAB. At w=5 and 10, oval CaWO4 crystals with length of 100 nm and 500 nm were obtained, respectively. At w=20, rod-like CaWO4 crystal with length of 1 μm was obtained. The sphere CaWO4 crystal with length of about 2~3 μm was obtained at w=30. The CaWO4 crystal morphology changes from oval to sphere via a rod by aggregation with increasing the molar ratio of H2O to CTAB.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.237-240
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• 2002

In this W, a NiSi technology suitable for sub-100nm CMOS sevice is proposed. It seems that capping layer has little effect on the sheet resistance and junction leakage current when there is no thermal treatment. However, there happened agglomeration and drastic increase of Junction leakage current without capping layer. In other word, capping layer especially TiN capping layer is highly effective in suppressing thermal effect. It is shown that the sheet resistance of 0.12${\mu}{\textrm}{m}$ linewidth and shallow p+/n junction with NiSi were stable up to 700 t /30 minute thermal treatment.

• Composites Research
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• v.26 no.2
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• pp.111-115
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• 2013

Aluminum-based composites containing $C_{60}$-fullerenes are produced by hot rolling of ball-milled powder. The grain size of aluminum is effectively reduced to ~100 nm during ball-milling processes, leading to grain refinement strengthening of the composite. Furthermore, $C_{60}$-fullerenes are gradually dispersed during ball-milling processes and hence the strength of the composite increases with the volume of $C_{60}$-fullerenes. The composite containing 10 vol% $C_{60}$-fullerenes with a grain size of ~ 100 nm exhibits ~1 GPa of compressive strength.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1197-1201
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• 2003

Thin film on SiO$_2$ glass was synthesized by a dip-coating method from the ZrO$_2$ sol which had dispersed nanosize Au particle under ambient atmosphere. After heat treatment of the prepared thin film, the characteristics were investigated by X-ray diffraction, UV-VIS spectrometer, Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). It was found that ZrO$_2$ thin film with 100 nm thickness was crystallized to tetragonal phase at 50$0^{\circ}C$. The size of dispersed Au particle was 15∼40nm and the film had a smooth surface with a roughness of 0.84 nm. The film showed nonlinearity characteristics with absorption peaks at 630∼670nm visible region because of the plasma resonance of Au metallic particles.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.8
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• pp.1095-1102
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• 2021

A scalable ECC architecture with high scalability and flexibility between performance and hardware complexity is proposed. For architectural scalability, a modular arithmetic unit based on a one-dimensional array of processing element (PE) that performs finite field operations on 32-bit words in parallel was implemented, and the number of PEs used can be determined in the range of 1 to 8 for circuit synthesis. A scalable algorithms for word-based Montgomery multiplication and Montgomery inversion were adopted. As a result of implementing scalable ECC processor (sECCP) using 180-nm CMOS technology, it was implemented with 100 kGEs and 8.8 kbits of RAM when N_PE=1, and with 203 kGEs and 12.8 kbits of RAM when N_PE=8. The performance of sECCP with N_PE=1 and N_PE=8 was analyzed to be 110 PSMs/sec and 610 PSMs/sec, respectively, on P256R elliptic curve when operating at 100 MHz clock.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.167-172
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• 2013

Titanium dioxides nanoparticles coated aluminum oxide powders were fabricated by pulsed laser deposition (PLD) with Nd : YAG laser at 266 nm. The Pulse laser energy is 100 mJ/pulse. During the irradiation of the focused laser on the $TiO_2$ target, Ar gas is supplied into the chamber. The gas pressure is varied in a range of $1{\times}10^{-2}$ to 100 Pa. Titanium dioxides nanoparticles deposited aluminum oxide powders were characterized by using energy dispersive X-ray spectroscopy (EDX), high resolution transmission electron microscopy (HR-TEM), in order to understand the effect of Ar background gas on surface morphology and properties of the powders. The coated $TiO_2$ nanoparticles had nanosized spherical shape and the crystallite sizes of 10~30 nm. The morphology of coated $TiO_2$ nanoparticles is not affected by gas pressure. However, the particle size and crystallinity slightly increased with the increase of gas pressure. According to this technique, the size and crystallinity of nanoparticles can be easily controlled by controlling pressure during the laser irradiation.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.140-143
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• 2006

Single crystalline $CoFe_2O_4$ thin films on (100) MgO substrates were fabricated using a rf magnetron sputtering method. The deposited films were investigated for their crystallization by X-ray diffraction, Rutherford back-scattering spectroscopy and field emission scanning electron microscopy. When a cobalt ferrite film was deposited at the substrate temperature of $600^{\circ}C$, squared grains of about 200 nm were uniformly distributed in the film. However, the grains became irregular and their sizes also varied from 30 to 150 nm when the substrate temperature was $700^{\circ}C$. Hysteresis loops of a film deposited at $600^{\circ}C$ showed that the magnetically easy axis of the film was perpendicular to the substrate surface. Except for the squareness ratio, magnetic properties of the cobalt ferrite films grown by the present rf sputtering method were as good as those of the films prepared by a laser ablation method: The in-plane and perpendicular coercivities were 283 and 6800 Oe, respectively. As the thickness of the deposited film increased twice, the saturation magnetization became double but the coercivity remained unchanged. However, deposition of the Co ferrite films with a higher rf powder decreased the squareness ratio and the perpendicular coercivity of the films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.338-343
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• 2005

Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 ％), those on a randomly oriented LNO show a random crystal orientation (F=60 ％). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.153-154
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• 2007

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.33-38
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• 2021

Recently, rollable and foldable displays are attracting great attention in the flexible display market due to their excellent form factor. To predict and prevent the mechanical failure of the display panels, it is essential to accurately understand the mechanical properties of brittle SiN_x thin films, which have been used as an insulating film in flexible displays. In this study, tensile properties of the ~130 nm- and ~320 nm-thick SiN_x thin films were successfully measured by coating a ~190 nm-thick organic nano-support-layer (PMMA, PS, P3HT) on the fragile SiN_x thin films and stretching the films as a bilayer state. Young's modulus values of the ~130 nm and ~320 nm SiN_x thin films fabricated through the controlled chamber pressure and deposition power (A: 1250 mTorr, 450 W/B: 1000 mTorr, 600 W/C: 750 mTorr, 700 W) were calculated as A: 76.6±3.5, B: 85.8±4.6, C: 117.4±6.5 GPa and A: 100.1±12.9, B: 117.9±9.7, C: 159.6 GPa, respectively. As a result, Young's modulus of ~320 nm SiN_x thin films fabricated through the same deposition condition increased compared to the ~130 nm SiN_x thin films. The tensile testing method using the organic nano-support-layer was effective in the precise measurement of the mechanical properties of the brittle thin films. The method developed in this study can contribute to the robust design of the rollable and foldable displays by enabling quantitative measurement of mechanical properties of fragile thin films for flexible displays.