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http://dx.doi.org/10.4313/JKEM.2005.18.4.338

Effects of (100) Orientation of LaNiO3 on the Growth and Ferroelectric Properties of Pb(Zr,Ti)O3 Thin Films  

Park, Min-Seok (부경대학교 전자공학과)
Seo, Byung-Joon (부경대학교 전자공학과)
Yoo, Young-Bae (부경대학교 전자공학과)
Moon, Byung-Kee (부경대학교 물리학과)
Son, Se-Mo (부경대학교 화상정보공학부)
Chung, Su-Tae (부경대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.4, 2005 , pp. 338-343 More about this Journal
Abstract
Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 ％), those on a randomly oriented LNO show a random crystal orientation (F=60 ％). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.
Keywords
PZT thin film; LaNiO₃; Crystal orientation; Sol-gel; Ferroelectric;
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