• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.118-118
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• 1993

• 한국재료학회:학술대회논문집
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• 한국재료학회 2000년도 추계학술발표강연 및 논문개요집
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• pp.88-88
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• 2000

• 한국표면공학회지
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• 제41권5호
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• pp.199-204
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• 2008

Indium tin oxide (ITO) has been commonly used as an anode for organic light emitting diode (OLED), because of its relatively high work function, high transmittance, and low resistance. The ITO was mostly deposited by capacitive type DC or RF sputtering. In this study we introduced a new facing target sputtering method. On applying this new sputtering method, the effect of fundamental deposition parameters such as substrate heating and post etching were investigated in relation to the resultant I-V-L characteristics of OLED. Three kinds of ITOs deposited at room temperature, at $400^{\circ}C$ and at $400^{\circ}C$ with after surface modification by $O_2$ plasma etching were compared. The OLED on ITO deposited with substrate heating and followed by etching showed better I-V-L characteristics, which starts to emit light at 4 volts and has luminescence of $65\;cd/m^2$ at 9 volts. The better I-V-L characteristics were ascribed to the relevant surface roughness with uniform micro-extrusions and to the equi-axed micromorphology of ITO surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.360.2-360.2
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• 2016

CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.886-890
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• 2010

The polytetrafluoroethylene (PTFE) films are deposited on glass using conventional rf-magnetron sputtering method. Their hydrophobic properties are investigated for application as an anti-fouling coating layer on the screen of displays. It is found that the hydrophobicity of PTFE films largely depends on the sputtering conditions, such as Ar gas flow and deposition time during sputtering process. These conditions are closely related to the deposition rate or thickness of PTFE film. Thus, it is also found that the deposition rate or the film thickness affects sensitively the geometrical morphology formed on surface of the rf-spluttered PTFE films. In particular, the PTFE film with 1950 nm thickness deposited for 30 minute at rf-power 50 W shows a very excellent optical transmittance of over 90% and a good anti-fouling property and a good durability.

• 열처리공학회지
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• 제13권6호
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• pp.398-404
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• 2000

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.279-283
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• 2016

In this study, we intended to achieve both antibacterial properties and electromagnetic shielding using the Al-doped ZnO (AZO) films. FTS (Facial Target Sputtering) magnetron sputtering was used for the AZO thin films instead of the conventional RF sputtering because the FTS sputtering could avoid the damage for the plasma as well as fabrication of thin films with a high quality. The 300-nm thick AZO thin films grown on glass substrate showed a resistivity of about $7{\times}10^{-4}{\Omega}-cm$ and a transmittance of about 90% at a wavelength of 550 nm. AZO thin films were investigated for the electromagnetic shielding effectiveness measured by 2-port network method at 1.5 ~ 3 GHz. The AZO (300 nm)/glass films showed an EMI shielding effectiveness of approximately 27 dB. An antibacterial effect was measured by the film attachment method (JIS Z 2801). The percent reductions of bacteria by AZO films were 99.99668% and 99.99999% against Staphylococcus aureus and Escherichia coli, respectively.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.706-710
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• 2007

Ti-containing amorphous carbon (a-C:Ti) films shows attractive mechanical properties such as low friction coefficient, good adhesion to various substrate and high wear resistance. The incorporation of titanium in a-C films is able to improve the electrical conductivity, friction coefficient and adhesion to various substrates. In this study, a-C:Ti films were depositied on Si wafer by closed-field unbalanced magnetron (CFUBM) sputtering system composed two targets of carbon and titanium. The tribological properties of a-C:Ti films were investigated with the increase of DC bias voltage from 0 V to - 200 V. The hardness and elastic modulus of films increase with the increase of DC bias voltage and the maximum hardness shows 21 GPa. Also, the coefficient of friction exhibites as low as 0.07 in the ambient. In the result, the a-C:Ti film obtained by CFUBM sputtering method improved the tribological properties with the increase of DC bias volatage.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.706-712
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• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.499-502
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• 2000

In this study, $\alpha$-Fe$_2$O$_3$thin films were deposited on $Al_2$O$_3$substrate by RF magnetron sputtering method from a $\alpha$-Fe$_2$O$_3$target(99.9%). The sputtering atmosphere was Ar and 80%Ar:20%O$_2$mixture in a total gas pressure of 1~3mTorr. As-deposited $\alpha$-Fe$_2$O$_3$thin films were heated to 300, 400, 500, $600^{\circ}C$ for 5hr in oxygen atmosphere. The structure and the morphology of $\alpha$-Fe$_2$O$_3$thin films were examined by scanning Electron microscopy(SEM) and the crystal structure was analyzed by X-Ray Diffractometer(XRD). The microstructure of the annealed $\alpha$-Fe$_2$O$_3$films exhibits rather gross particle and the grain size was less than 100nm. Since the grain size was very small, the gas sensitivity was expected to be improved.