• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.23-27
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• 2000

Indium in oxide(ITO) films have been deposited on PET and glass substrates by DC reactive magnetron sputtering without post-deposition thermal treatment, The high quality for microstructure, electrical and optical properties of the as-deposited ITO films on unheated substrates is dominated by the sputtering parameters, The influence of the working gas pressure, DC power and oxygen partial pressure has been systematically investigated, The lowest DC power, and oxygen partial pressure has been systematically investigated, The lowest resistivity of ITO films deposited on PET substrates was 6$\times$10$^{-4}$ $\Omega$cm. It has been obtained at a working pressure of 3 mTorr and DC power of 30 W. The sheet resistance and optical transmittance of these film were 22 $\Omega$/square and 84% respectively. The best values of figures of merit for the electrical and optical characteristics such as T/ $R_{sh}$ and $T^{10}$ / $R_{sh}$ are approximately 38.1 and 7.95($\times$10$^{-3}$ $\Omega$$^{-1}$ ), respectively.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.320-325
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• 2010

NiO thin films were deposited by radio frequency magnetron sputtering on glass substrates. The processing variables of the oxygen content, sputtering power, and pressure were varied to investigate the electrical properties and surface morphology of NiO films. It was found that the resistivity of NiO films at $1.22{\times}10^2{\Omega}cm$ (2.5% $O_2$ in Ar gas) was greatly reduced to$ 2.01{\times}10^{-1}$ ${\Omega}cm$ (100% oxygen) under a typical sputtering condition of 6 mTorr and 200 watts. In an effort to observe the resistivity variances, the sputtering power was varied from 80 to 200 watts at 6 mTorr with 100% $O_2$. However, the resistivity of the NiO films changed in the range of $10^{-1}-10^{-2}$ ${\Omega}cm$. The dependence on the sputtering power was therefore found to be weak in this experiment. When the sputtering pressure was changed from 3 to 60 mTorr at 200 watts with 100% $O_2$, the resistivity of the NiO films showed the lowest value of $5.8{\times}10^{-3}$ ${\Omega}cm$ at 3 mTorr, which is close to that of commercial ITO films (${\sim}10^{-4}$ ${\Omega}cm$). As the sputtering pressure increased, the resistivity also increased to 4.67 cm at 60 mTorr. The surface morphology of the NiO films was also checked by Atomic Force Microscopy. It was found that the RMS surface roughness values ranged from 0.6 to 1.5 nm and thtthe dependence on the sputtering parameters was weak.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.509-514
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• 2011

In this study, optical emission spectroscopy was used to monitor the plasma produced during the RF magnetron sputtering of a $BaTiO_3$ target. The intensities of chemical species were measured by real time monitoring with various discharge parameters such as RF power, pressure, and discharge gas. The emission lines of elemental and ionized species from $BaTiO_3$ and Ti targets were analyzed to evaluate the film composition and the optimized growth conditions for $BaTiO_3$ films. The emissions from Ar(I, II), Ba(I, II) and Ti(I) were found during sputtering of the $BaTiO_3$ target in Ar atmosphere. With increasing RF power, all the line intensities increased because the electron density increased with increasing RF power. When the Ar pressure increased, the Ba(II) and Ti(I) line intensity increased, but the $Ar^+$ line intensity decreased with increasing pressure. This result shows that high pressure is of greater benefit for the ionization of Ba than for that of Ar. Oxygen depressed the intensity of the plasma more than Ar did. When the Ar/$O_2$ ratio decreased, the intensity of Ba decreased more sharply than that of Ti. This result indicates that the plasma composition strongly depends on the discharge gas atmosphere. When the oxygen increased, the Ba/Ti ratio and the thickness of the films decreased. The emission spectra showed consistent variation with applied power to the Ti target during co-sputtering of the $BaTiO_3$ and Ti targets. The co-sputtered films showed a Ba/Ti ratio of 1.05 to 0.73 with applied power to the Ti target. The films with different Ba/Ti ratios showed changes in grain size. Ti excess films annealed at $600^{\circ}C$ did not show the second phase such as $BaTi_2O_5$ and $TiO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.729-733
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• 2005

Al electrode for OLED was deposited by FTS (Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar or Ar+kr mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr). The film thickness and I-V curve of Al/cell were measured and evaluated. In the results, when Al thin films were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11 V. And using the Ar:Kr($75\%:25\%$) mixed gas, the turn-on voltage of Al/cell decreased to about 7 V.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.799-808
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• 1995

Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.27-32
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• 2004

High temperature superconducting coated conductor has a structure of /< superconducting layer>//. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is CeO$_2$(cap layer)/YSZ(diffusion barrier layer)/CeO$_2$(seed layer). Evaporation technique is used for the CeO$_2$ layer and DC reactive sputtering technique is used for the YSZ layer, A chamber was set up specially for DC reactive sputtering, Detailed features are as following. A separator divided the chamber into two halves a sputtering chamber and a reaction chamber. The argon gas for sputtering target elements flows out of the cap of sputtering gun, and water vapor for reaction with depositing species spouts near the substrate. Turbo pump is connected with reaction chamber. High speed deposition of YSZ film could be achieved in the chamber. Detailed deposition conditions (temperature and partial pressure of reaction gas) were investigated for the rapid growth of high quality YSZ film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.966-972
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• 2010

Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.761-763
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• 1998

In this paper, Co-Cr thin films which are known for a excellent perpendicular magnetic recording media were prepared. Changing target- substrate distance, Ar gas pressure and arriving atoms, the incident angle and c-axis orientation properties by using the facing targets sputtering system. We evaluated the c-axis dispersion angle by measu ring half-height width with Micro area X-Ray Diffractometer, measured the thickness of thin film with Ellipsometer. The magnetic properties were compared measuring in-plane squareness and perpendicular coercivity with vibrating sample Magnetometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.336-336
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• 2010

Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe, a Hall Effect measurement and an UV/VIS spectrometer. The minimum resistivity of film was $6.5{\times}10^{-4}$[$\Omega$-cm] and the average transmittance of over 80% was seen in the visible range.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1049-1052
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• 2003

This study shows the change of the structural characteristic of AIN thin film deposition with the change of the deposition conditions such as Ar/$N_2$ gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AIN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of $N_2$ to Ar. Especially the thin film deposited at 10% of Ar/$N_2$ gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.