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http://dx.doi.org/10.4313/JKEM.2005.18.8.729

Preparation of Al Cathode for OLED by Sputtering Method  

Keum, Min-Jong (경원대학교 전기공학과)
Kim, Kyung-Hwan (경원대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.8, 2005 , pp. 729-733 More about this Journal
Abstract
Al electrode for OLED was deposited by FTS (Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar or Ar+kr mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr). The film thickness and I-V curve of Al/cell were measured and evaluated. In the results, when Al thin films were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11 V. And using the Ar:Kr($75\%:25\%$) mixed gas, the turn-on voltage of Al/cell decreased to about 7 V.
Keywords
OLED; Al; cathode; FTS;
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