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High speed deposition technique of YSZ film for the superconducting tape  

Kim Ho-Sup (한국전기연구원 초전도재료연구그룹)
Shi Dongqui (한국과학기술원 물리학과)
Chung Jun-Ki (한국전기연구원 초전도재료연구그룹)
Ko Rock-Kil (한국전기연구원 초전도재료연구그룹)
Ha Hong-Soo (한국전기연구원 초전도재료연구그룹)
Song Kyu-Jeong (한국전기연구원 초전도재료연구그룹)
Youm Do-Jun (한국전기연구원 초전도재료연구그룹)
Park Chan (한국전기연구원 초전도재료연구그룹)
Publication Information
Progress in Superconductivity and Cryogenics / v.6, no.3, 2004 , pp. 27-32 More about this Journal
Abstract
High temperature superconducting coated conductor has a structure of /< superconducting layer>//. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is CeO$_2$(cap layer)/YSZ(diffusion barrier layer)/CeO$_2$(seed layer). Evaporation technique is used for the CeO$_2$ layer and DC reactive sputtering technique is used for the YSZ layer, A chamber was set up specially for DC reactive sputtering, Detailed features are as following. A separator divided the chamber into two halves a sputtering chamber and a reaction chamber. The argon gas for sputtering target elements flows out of the cap of sputtering gun, and water vapor for reaction with depositing species spouts near the substrate. Turbo pump is connected with reaction chamber. High speed deposition of YSZ film could be achieved in the chamber. Detailed deposition conditions (temperature and partial pressure of reaction gas) were investigated for the rapid growth of high quality YSZ film.
Keywords
DC reactive sputtering; coated conductor; buffer layer; YSZ;
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