• 대한전자공학회논문지SD
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• 제37권10호
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• pp.11-16
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• 2000

회로설계 엔지니어들이 쉽게 RF IC 설계에 사용할 수 있는 나선형 인덕터의 SPICE 모델을 개발하였다. 이 모델은 나선형 인덕터의 등가회로 소자 값들을 SPICE의 user-defined function 및 subcircuit 기능을 이용하여, 레이아웃 변수, 공정 변수, 실리콘 기판 변수로부터 정의하였다. 특히 인덕턴스는 임의의 회전에 대한 인덕턴스 Li 및 임의의 두 회전에 대한 상호 인덕턴스 Mij를 subcircuit으로 정의하여 전체 인덕턴스 값을 계산하였다. 모델의 정확성을 검증하기 위하여 CMOS 0.8${\mu}m$ 공정으로 제작된 나선형 인덕터의 측정 s-파라미터, 총 인덕턴스 및 quality-factor 결과를 시뮬레이션 데이터와 비교한 결과 일치함을 확인하였다. 본 논문에서 제시된 SPICE를 이용한 나선형 인덕턴스 모델은 scalable하며, 실리콘 기판의 영향등을 포함하기 때문에 레이아웃 최적화에 쉽게 사용할 수 있는 장점을 가진다.

• 대한전자공학회논문지SD
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• 제45권2호
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• pp.7-12
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• 2008

본 연구에서는 게이트 finger수가 증가될수록 드레인 전류의 증가율과 차단주파수가 감소되는 wide width effect를 관찰하였으며, 이 현상을 모델링하기 위하여 기존 BSIM3v3 RF 모델에 finger수에 무관한 외부 소스 저항을 새로 첨가한 개선된 SPICE MOSFET RF 모델을 개발하였다. 이러한 모델로 시뮬레이션된 Nf 종속 드레인 전류와 차단주파수는 기존 BSIM3v3 RF모델보다 $0.13{\mu}m$ multi-finger MOSFET의 측정데이터와 더 잘 일치하였으며, 이는 개선된 RF 모델의 정확도를 증명한다.

• Journal of Electrical Engineering and Technology
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• 제8권5호
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• pp.1182-1187
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• 2013

Transient radiation is emitted during a nuclear explosion and causes fatal errors as upset and latch-up in CMOS circuits. This paper proposes the transient radiation SPICE models of NMOS, PMOS, and INVERTER based on the transient radiation analysis using TCAD (Technology Computer Aided Design). To make the SPICE model of a CMOS circuit, the photocurrent in the PN junction of NMOS and PMOS was replaced as current source, and a latch-up phenomenon in the inverter was applied using a parasitic thyristor. As an example, the proposed transient radiation SPICE model was applied to a CMOS NAND circuit. The CMOS NAND circuit was simulated by SPICE and TCAD using the 0.18um CMOS process model parameter. The simulated results show that the SPICE results were similar to the TCAD simulation and the test results of commercial CMOS NAND IC. The simulation time was reduced by 120 times compared to the TCAD simulation.

• 반도체디스플레이기술학회지
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• 제16권3호
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• pp.71-77
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• 2017

As the automobile industry has shifted to software, the Automotive SPICE standard has been established to ensure efficient product development process and quality. In the assessment model, the HIS Scope is the minimum standard for small and medium automotive electric companies to meet OEM requirements. However, in order to achieve the HIS Scope, the output of each process stage that meets the verification criteria of Automotive SPICE must be created. In particular, the test phase takes a lot of resources, which is a big burden for small and medium-sized companies. In this paper, we propose a methodology for creating test cases of software integration test phase based on UML sequence diagram, which is a software design phase of Automotive SPICE HIS Scope, by applying behavior model based testing method. We also propose a tool chain for automating the creation process. This will reduce the resources required to create a test case.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.61-66
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• 2020

Threshold voltage shift occurring during operation is implemented in a SPICE simulation tool. Among the shift models the stretched-exponential function model, which is frequently observed from both single-crystal silicon and thin-film transistors regardless of the nature of causes, is selected, adapted to transient simulation, and added to BSIM4 developed by BSIM Research Group at the University of California, Berkeley. The adaptation method used in this research is to select degradation and recovery models based on the comparison between the gate and threshold voltages. The threshold voltage shift is extracted from SPICE transient simulation and shows the stretched-exponential time dependence for both degradation and recovery situations. The implementation method developed in this research is not limited to the stretched-exponential function model and BSIM model. The proposed method enables to perform transient simulation with threshold voltage shift in situ and will help to verify the reliability of a circuit.

• 센서학회지
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• 제30권4호
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• pp.261-266
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• 2021

A simple memristor model is proposed for the neuromorphic system in the Simulation Program for Integrated Circuits Emphasis (SPICE). The memristive I-V characteristics with different voltage and frequencies were analyzed. And with the model, we configured a learning and inference system with 4 by 4 memristor array to show the practical use of the model. We examined the applicability by configuring the simplest neuromorphic circuit. The total simulation time for the proposed model was 18% lesser than that for the one-memristor model. When compared with more memristor models in a circuit, the time became even shorter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1203-1204
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• 2007

In the methods for securing software quality and safety, two approaches - product centered approach and process centered approach - can be suggested. SPICE is a standard for the process improvement and the capability determination, which is planned for securing software quality and safety by the process centered approach. In this paper, general SPICE model, which is presented in ISO/IEC 15504 and Automotive SPICE model for automobile industry are analyzed. For securing railway software quality and safety, appropriate scheme to apply Automotive SPICE to railway software is proposed.

• 한국정보과학회:학술대회논문집
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• 한국정보과학회 2003년도 가을 학술발표논문집 Vol.30 No.2 (2)
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• pp.364-366
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• 2003

수준 높은 소프트웨어의 품질과 개발, 유지보수 비용의 최소화, 제품 출하시간의 단축을 위하여 소프트웨어 프로세스에 대한 예측, 통제 가능성을 증가시키기 위함이다. 기업이 최고도의 높은 수준에 도달하기 의해서는 정량적인 모델에 의한 프로젝트 관리가 필요하다. 따라서 기업들은 SPICE/CMM와 같은 표준을 사용하여 조직의 프로세스 능력 수준을 평가하고 수준향상을 꾀한다. 조직의 프로세스의 능력을 평가하고 수준향상을 위해서는 신뢰성 있는 SPICE 심사의 심사결과에 대한 객관적인 신뢰성의 보장과 좀더 적은 비용으로 프로세스의 수준향상을 할 수 있는 방법이 필요하다. 본 논문에서는 SPICE 심사의 신뢰성을 얻기 위해 CMM/KPA 설문서를 통해 심사하고 SPICE심사의 결과를 비교 분석하여 SPICE심사의 신뢰성을 검증한다. 또한 이를 기반으로 CMM/KPA 설문서의 정량적인 모델을 제안함으로서 좀더 적은 비용과 시간으로 SPICE 심사의 결과와 같은 효과를 얻을 수 있게 한다.

• 전기학회논문지
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• 제60권12호
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• pp.2281-2285
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• 2011

An algorithm for extracting SPICE MOS level 2 model parameters for the high voltage MOSFET DC model is proposed. The optimization method for analyzing the nonlinear data of the current-voltage curve using the Gauss-Newton algorithm is proposed and the pre-process step for calculating the threshold voltage and the mobility is proposed. The drain current obtained from the proposed method shows the maximum relative error of 5.6% compared with the drain current of 2-dimensional device simulation for the high voltage MOSFET.

• 전기학회논문지
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• 제61권3호
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• pp.422-426
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• 2012

Transient radiation is emitted during a nuclear explosion. Transient radiation causes a fatal error in the CMOS circuit as a Upset and Latch-up. In this paper, transient radiation NMOS, PMOS, INVERTER SPICE model was proposed on the basisi of transient radiation effects analysis using TCAD(Technology Computer Aided Design). Photocurrent generated from the MOSFET internal PN junction was expressed to the current source and Latch-up phenomenon in the INVERTER was expressed to parasitic thyristor for the transient radiation SPICE model. For example, the proposed transient radiation SPICE model was applied to CMOS NAND circuit. SPICE simulated characteristics were similar to the TCAD simulation results. Simulation time was reduced to 120 times compared to TCAD simulation.