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http://dx.doi.org/10.5370/KIEE.2012.61.3.422

A Study of CMOS Device Latch-up Model with Transient Radiation  

Jeong, Sang-Hun (전북대학교 전자공보공학부, 한국원자력연구원)
Lee, Nam-Ho (한국원자력연구원)
Lee, Min-Su (한국과학기술원)
Cho, Seong-Ik (전북대학교 전자공학부)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.61, no.3, 2012 , pp. 422-426 More about this Journal
Abstract
Transient radiation is emitted during a nuclear explosion. Transient radiation causes a fatal error in the CMOS circuit as a Upset and Latch-up. In this paper, transient radiation NMOS, PMOS, INVERTER SPICE model was proposed on the basisi of transient radiation effects analysis using TCAD(Technology Computer Aided Design). Photocurrent generated from the MOSFET internal PN junction was expressed to the current source and Latch-up phenomenon in the INVERTER was expressed to parasitic thyristor for the transient radiation SPICE model. For example, the proposed transient radiation SPICE model was applied to CMOS NAND circuit. SPICE simulated characteristics were similar to the TCAD simulation results. Simulation time was reduced to 120 times compared to TCAD simulation.
Keywords
CMOS; TCAD; Latch-up; Transient Radiation Effects (TRE);
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