• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.7 s.337
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• pp.41-48
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• 2005

We design and fabricate 3-dB tandem directional coupler using the coplanar waveguide structure which is applicable to balanced amplifiers and mixers for 60 GHz wireless local area network system. The coupler comprises the multiple-sectional parallel-coupled lines to facilitate the fabrication process, and enable smaller device size and higher directivity than those of the conventional 3-dB coupler employing the edge-coupled line. In this study, we adopt the structure of two-sectional parallel-coupled lines of which each single-coupled line has a coupling coefficient of -8.34 dB and airbridge structure to monolithically materialize the uniplanar coupler structure instead of using the conventional multilayer or bonded structure. The airbridge structure also supports to minimize the parasitic components and maintain desirable device performance in V-band (50$\~$75 GHz). The measured results from the fabricated couplers show couplings of 3.S$\~$4 dB and phase differences of 87.5$^{\circ}{\pm}1^{\circ}$ in V-band range and show directivities higher than 30 dB at a frequency of 60 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.226-231
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• 2014

Thin thermistor films of solutions with nickel and manganese oxides were prepared by metal-organic decomposition (MOD). The structural properties of the thin films were investigated as a function of annealing temperature. Field emission scanning electron microscope (FE-SEM) results indicated that the thin films had a thin thickness, smooth and dense surface. The crystallization temperature of $414.9^{\circ}C$ was confirmed from thermogavimetric-differential thermal analysis (TG-DTA) curve. A single phase of cubic spinel structure was obtained for the thin film annealed from $700^{\circ}C$ to $800^{\circ}C$, which was confirmed from the X-ray diffraction (XRD). From the selected area electron diffraction (SAED) in high resolution transmission electron microscope (HRTEM), the nano grains (2~3 nm) of spinel phase with (311) and (222) planes were detected for the thin film annealed at $500^{\circ}C$, which could be applicable to read-out integrated circuit (ROIC) substrate of the uncooled microbolometer with low processing temperature.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.11
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• pp.2009-2014
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• 2017

A novel structure of phase locked loop (PLL) with a time constant comparator and a current compensator has been proposed. The proposed PLL uses small capacitors which are impossible for stable operation in a conventional PLL. It is small enough to be integrated into a single chip. The time constant comparator detects the loop filter output voltage variations using signals which are passed through small and large RC time constants. The signal from the large RC time constant node is the average of the loop filter output voltage. The output voltage of another node is approximately equal to the present loop filter voltage. The output of the time constant comparator controls a current compensator and charge/discharge small size loop filter capacitors. It makes the proposed PLL operate stably. It has been simulated and proved by HSPICE in a CMOS $0.18{\mu}m$ 1.8V process.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.617-623
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• 2002

In order to improve the hydrogen storage capacity and the activation properties of the hydrogen storage alloys, the rare-earth metal alloy series, $MmNi_{ 4.5}$$Mn_{0.5}$ $Zr_{x}$ (x=0, 0.025, 0.05, 0.1), are prepared by adding the excess Zr in $MmNi_{4.5}$ $Mn_{0.5}$ / alloy for the strong resistance to intrinsic degradation. The hydrogen storage alloys of rare-earth metal such as $LaNi_{5}$ , and $MmNi_{5}$X and $MmNi_{4.5}$ /$_Mn{0.5}$ alloys which substituted La by misch metal properties were characterized as well. The hydrogen storage alloys were produced by melting each metal mixture in arc melting furnace, and the as-cast alloys were heat-treated at $1100^{\circ}C$ for 10 hr. The major elements of misch metal(Mm) were La, Ce, Pr and Nd with some impurities less than 1wt.% determined by ICP-AES. X-ray diffraction indicated that the structure for these samples was a single phase of hexagonal with $CaCu^{5}$ type. As the Zr contents increases, the activation time and the plateau pressure decrease and sloping of the plateau pressure increase. Amount of the 2nd phases increases with increase in Zr contents in $MmNi_{ 4.5}$$Mn_{0.5}$ $Zr_{0.1}$ alloy, This phenomenon indicated that $ZrNi_3$ in this phase, which shows the maximum storage capacity and the strong resistance to intrinsic degradation, is considered as a proper alloy for hydrogen storage..

• Journal of Hydrogen and New Energy
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• v.7 no.1
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• pp.19-28
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• 1996

Ti-Mn based hydrogen storage alloy were modified by substituting alloying elements such as Zr, V and Ni in order to design a high capacity MH electrode for Ni/MH rechargeable battery. When V was substituted in Ti-Mn binary system, the crystal structure was maintained as $Cl_4$ Laves phase at a composition of $Ti_{0.2}V_{0.4}Mn_{0.4}$ and $Ti_{0.4}V_{0.2}Mn_{0.4}$ and equilibrium pressure decreased below 1 atm without decreasing hydrogen storage capacity considerably. It was found that Ni should be included in Ti-V-Mn alloy in order to hydrogenate it electrochemically in KOH electrolyte. But substitution of Ni for Mn in Ti-V-Mn system caused the increase of equilibrium pressure above 1atm and decrease of hydrogen storage capacity. Zr was able to increase the reversible hydrogen storage capacity of Ti-V-Mn-Ni alloy without considerable change of hydrogenation properties. The electrochemical discharge capacity of Ti-Zr-V-Mn-Ni system were in the range of 350 - 464mAh/g and among them $Ti_{0.8}Zr_{0.2}V_{0.5}Mn_{0.5}Ni_{1.0}$ alloy had $Cl_4$ Laves single phase and very high electrochemical discharge capacity of 464mAh/g.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.486-490
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• 2012

$La_{7.33}Bi_2(SiO_4)_6O_2$ specimens were fabricated by standard solid-state synthesis route for solid oxide electrolytes. The calcined powders exhibited uniform particles with a mean particle size of about $28{\mu}m$. The room-temperature structure of $La_{7.33}Bi_2(SiO_4)_6O_2$ specimens was analyzed as hexagonal, space group P63 or P63/m, and the unit cell volume increased with increase a sintering temperature. The specimens sintered at $1,175^{\circ}C$ showed X-ray patterns of homogeneous apatite single phase without the second phase such as $La_2Si_2O_7$ and $La_2SiO_5$. The specimen sintered at $1,175^{\circ}C$ showed the maximum sintered density of 5.49 $g/cm^3$. Increasing the sintering temperature, total conductivities increased, activation energy decreased and the values were $1.98{\times}10^{-5}Scm-1$ and 1.23 eV, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.183-183
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• 2011

Multiferroic materials have been widely studied in recent years, because of their abundant physics and potential applications in the sensors, data storage, and spintronics. $BiFeO_3$ is one of the well-known single-phase multiferroic materials with $ABO_3$ structure and G-type antiferromagnetic behavior below the Neel temperature $T_N$ ~ 643 K, but the ferroelectric behavior below the Curie temperature $T_c$~1,103 K. In this study, the $BiFe_{1-x}Ni_xO_3$ (x=0 and 0.05) bulk ceramics were prepared by solid-state reaction and rapid sintering with high-purity $Bi_2O_32$, $Fe_3O_4$ and NiO powders. The powders of stoichiometric proportions were mixed, as in the previous investigations, and calcined at 450$^{\circ}C$ for $BiFe_{1-x}Ni_xO_3$ for 24 h. The obtained powders were grinded, and pressed into 5-mm-thick disks of 1/2-inch diameter. The disks were directly put into the oven, which has been heated up to 800$^{\circ}C$ and sintered in air for 20 min. The sintered disks were taken out from the oven and cooled to room temperature within several min. The phase of samples was checked at room temperature by powder x-ray diffraction using a Rigaku Miniflex diffractometer with Cu K${\alpha}$ radiation. The Raman measurements were carried out by employing a hand-made Raman spectrometer with 514.5-nm-excitation $Ar^+$ laser source under air ambient condition on a focused area of 1-${\mu}m$ diameter. The field-dependent magnetization measurements were performed with a superconducting quantum-interference-device magnetometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.59-59
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• 2011

We will report atomically sharp epitaxial growth of $Bi_2Se_3$ three-dimensional topological insulator films on Si(111) substrate with molecular beam epitaxy (MBE). It was achieved by employing two step growth temperatures to prevent any formation of second phase, like as $SiSe_2$ clusters, between $Bi_2Se_3$ and Si substrate at the early stage of growth. The growth rate was determined completely by Bi flux and the Bi:Se flux ratio was kept ~1:15. The second-phase-free atomically sharp interface was verified by RHEED, TEM and XRD. Based on the RHEED analysis, the lattice constant of $Bi_2Se_3$ relaxed to its bulk value during the first quintuple layer implying the absence of strain from the substrate. Single-crystalline XRD peaks of $Bi_2Se_3$ were observed in films as thin as 4 QL. TEM shows full epitaxial structure of $Bi_2Se_3$ film down to the first quintuple layer without any second phases. This growth method was used to grow high quality epitaxial $Bi_2Se_3$ films from 3 QL to 3600 QL. The magneto-transport properties of these thin films show a robust 2D surface state which is thickness independent.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.136-142
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• 1994

Epitaxial TiSiz films have been grown by UHV deposition of Ti on atomically clean Si(ll1)- orientated substrates. The Ti film of 50$\AA$ was deposited on the reconstructed Si(ll1) surface at room temperature. The sample was annealed up to $800^{\circ}C$ in $100^{\circ}C$ increments. The structure of the TiSiL films have been identified as the C49 metastable phase by electron diffraction patterns. Scanning electron microscopy( SEM) shows three different types of Tiksilicide island morphologies. The individual island structures are single crystal and are considered to be epitaxy with different crystallographic orientations. The orientational relationships of the $TiSi_{2}$ islands is given by [ 172 1 C49 $TiSi_{2}$//[110] Si and (021) C49 $TiSi_{2}$// (111)Si.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.270-275
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• 2004

Due to the luminescence by$ Er ^{ 3+}$ activator, Er-doped $LaPO_4$ powders can be applied for optical amplification materials. In this study, $LaPO_4$:Er nanoparticles were synthesized in solution system using a high-boiling coordinating solvent and their properties were investigated through various spectroscopic techniques. The nanoparticles were to take a single phase of monazite structure by a X-ray diffraction analysis and to have the 5-6 nm of particles size with narrow size distribution by a TEM. And it was confirmed by the EA and FT-IR analyses that the surfaces of nanoparticles are coordinated with the solvent molecules, which will possibly keep from agglomerating between LaPO$_4$:Er nanoparticles. In the emission spectrum of $LaPO_4$:Er nanoparticle at NIR region, on the other hand, it was measured that the emission intensity is very weak, which is due to the transition from $^4$$I_{(13/2)}$ to $^4$$I_{(15/2)}$ of $Er^{3+ }$ion. It was interpreted that the weak luminescence of $LaPO_4$:Er is originated from the hydroxyl groups adsorbed on the surfaces of the nanoparticles, because OH group acts as an efficient quencher for the $^4$$I_{(13/2)}$ \longrightarrow $^4$$I_{(15/2)}$ emission of $Er^{3+}$ activator. But the co-doping of Yb$^{3+}$ as a sensitizer in this nanoparticle results in the increase of the emission intensity at 1539 nm due to the effective energy transfer from $Yb^{3+}$ to $Er^{3+}$ . In addition, the synthesized nanoparticles exhibited good dispersibility with some polymers and effective luminescence at NIR region.n.