• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.745-753
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• 2013

Performance of organic light-emitting diodes incorporating microlens array was simulated using a Light Tools software. Use of microlens array can help the light to escape out of the device. We simulated a reference device that is consisted of reflection layer, emissive layer, and flat transparent substrate. And in this reference device, outcoupled efficiency of 22% was obtained. Several shapes of microlens were applied such as hemisphere, trapezoid, cone, and rectangular parallelepiped. The results showed the improvement of outcoupled efficiency of the device with microlens compared to that of the reference one. And from the analyses of the simulated data, the obtained appropriate shape of microlens is hemisphere, and the improvement of the device with hemispherical lens is 57% higher than that of the reference one.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.377-380
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• 2003

Recently, demand of digital products with optoelectronic device is increasing rapidly. A microlens array is applied to improve optical efficiency on optoelectronic device, and it is usually fabricated by photolithography and reflow process after planarization layer coating process. UV molding process is more suitable for mass production of high quality microlens array than photolithography and reflow process. In the present study, microlens array was fabricated on the simulated optoelectronic device with planarization layer by aligned UV molding process. The shape of replicated microlens was measured, and the section image of molded part was examined.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.141-144
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• 2006

In this study, we developed a decladding device which separates 250 mm length of simulated nuclear spent fuel rod into the pallets and the pieces of the hulls after inserting the rod cut into the module with several pairs of blades. To improve the performance of the equipment, we considered some mechanisms to prevent the rod cut from being exposed or bounced into the hot-cell, to reduce the operation time, and to insert the rods automatically. It is expected that the newly developed system will contribute to prevent radioactive pollution in the hot-cell, reduce the operation time, and to increase the safety of the operators. As a result of the performance test for some mockup fuel rod cuts in the ACP(Advanced Spent Fuel Control Process) facility, it was verified that the decladding device could be applied to the actual fuel rod cut. And it will be able to use for a scale-up facility in the future.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.234-237
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• 2000

In this paper, a method to implement new Quasi-SOI LDMOSFET is introduced and the electrical characteristics of the device are studied. Key process steps of the device are explained briefly. By performing process and device simulations, electrical characteristics of the device are investigated, with emphasis on the optimization of the tilt angle of p$\^$0/ channel region. The electrical properties of the Quasi-SOI device are compared with those of bulk and SOI devices with the same process parameters. Simulated device characteristics are threshold voltage, off-state leakage current, subthreshold swing, DIBL, output resistance, lattice temperature, I$\_$D/-V$\_$Ds/, and cut-off frequency.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.292-300
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• 2024

Kinetic simulations have been performed on an Inertial Electrostatic Confinement Fusion (IECF) device. These simulations were performed using the particle-in-cell (PIC) method to analyze the behavior of ions in an IEC device and the effects of some parameters on the Confinement Time (CT). CT is an essential factor that significantly contributes to the IEC's performance as a nuclear fusion device. Using the PIC method, the geometry of a two-grided device with variable grid radius, the number of cathode grid rings, variable pressure and different dielectric thickness for the feed stalk was simulated. In this research, with the development of previous works, the interaction of particles was simulated and compared with previous results. The simulation results are in good agreement with the previous results. In these simulations, it was found that with the increase of the dielectric thickness of the feed stalk, the electric field was weakened and as a result, the confinement time was reduced. On the other hand, with the increase of the cathode radius, the confinement time increased. Using the results, an IEC device can be designed with higher efficiency and more optimal CT for ions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.42-49
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• 2007

This paper introduces a study on reliability-driven device placement using simulated annealing algorithm which can be applicable to MCM or electronic systems embedded in a spacecraft running at thermal conduction environment. Reliability of the unit's has been predicted with the devices' junction temperatures calculated from FDM solver and optimized by simulated annealing algorithm. Simulated annealing in this paper adopts swapping devices method as a perturbation. This paper describes and compares the optimization simulation results with respect to two objective functions: minimization of failure rate and minimization of average junction temperature. Annealing temperature variation simulation case and equilibrium coefficient variation simulation case are also presented at the two respective objective functions. This paper proposes a new approach for reliability optimization of MCM and electronic systems considering those simulation results.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.12
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• pp.5375-5400
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• 2016

IOMMU is a hardware unit that is indispensable for DMA. Besides address translation and remapping, it also provides I/O virtual address space isolation among devices and memory access control on DMA transactions. However, currently commodity virtualization platforms lack of IOMMU virtualization, so that the virtual machines are vulnerable to DMA security threats. Previous works focus only on DMA security problem of directly assigned devices. Moreover, these solutions either introduce significant overhead or require modifications on the guest OS to optimize performance, and none can achieve high I/O efficiency and good compatibility with the guest OS simultaneously, which are both necessary for production environments. However, for simulated virtual devices the DMA security problem also exists, and previous works cannot solve this problem. The reason behind that is IOMMU circuits on the host do not work for this kind of devices as DMA operations of which are simulated by memory copy of CPU. Motivated by the above observations, we propose an IOMMU para-virtualization solution called PVIOMMU, which provides general functionalities especially DMA security guarantees for both directly assigned devices and simulated devices. The prototype of PVIOMMU is implemented in Qemu/KVM based on the virtio framework and can be dynamically loaded into guest kernel as a module, As a result, modifying and rebuilding guest kernel are not required. In addition, the device model of Qemu is revised to implement DMA access control by separating the device simulator from the address space of the guest virtual machine. Experimental evaluations on three kinds of network devices including Intel I210 (1Gbps), simulated E1000 (1Gbps) and IB ConnectX-3 (40Gbps) show that, PVIOMMU introduces little overhead on DMA transactions, and in general the network I/O performance is close to that in the native KVM implementation without IOMMU virtualization.

• Proceedings of the KSME Conference
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• 2001.06c
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• pp.316-321
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• 2001

The optical storage device has recently experienced significant improvement, especially for the aspects of high capacity and fast transfer rate. However, it is necessary to study a new shape of air bearing surface for the rotary type actuator because the optical storage device has the lower access time than that of HDD (Hard Disk Drives). In this study, we proposed the air bearing shape by using SA (Simulated Annealing) algorithm which is very effective to achieve the global optimum instead of many local optimums. The objective of optimization is to minimize the deviation in flying height from a target value 100nm. In addition, the pitch and roll angle should be maintained within the operation limits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.111-111
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• 2009

In this work, we discuss simulation of surface acoustic wave device using Comsol Multiphysics. The structure SAW device based on piezoelectric thin film aluminum-nitride (AlN) on silicon was simulated. Some parameters of SAW device such as surface velocity, displacement of piezoelectric thin film were evaluated by software. Many modes and shapes of wave are also discussed in this paper. For evaluation physical parameters of AlN piezoelectric layer, the SAW resonator was modeled and simulation results were also compared with experiment results. we simulated arid evaluated the surface Rayleigh wave of AlN thin film on silicon substrate. Results simulation and experiment showed the surface velocity of AlN thin film was about 5200 m/s and shape of surface wave was also displayed. This paper has also proposed as method to study SAW characteristic of piezoelectric thin film and found out measurement values accurately of film such as stiffness matrix, piezoelectric matrix. These values are very important in calculation and design SAW device or MEMS device based on AlN piezoelectric layer.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.239-242
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• 1999

In this paper, we report the process/device design of high-speed, high-voltage SOI smart power IC for mobile communication system, high-speed HDD system and the electronic control system of automobiles. The high voltage LDMOS with 70V breakdown voltage under 0.8${\mu}{\textrm}{m}$ design rule, the high voltage bipolar with 40V breakdown voltage for analog signal processing, the high speed bipolar with cut-off frequency over 20㎓ and LDD NMOS for high density were proposed and simulated on a single chip by the simulator DIOS and DESSIS. And we extracted the process/device parameters of the simulated devices.