Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the Design of the New Structural SOI Smart Power Device with High Switching Speed and Voltage Characteristics

새로운 구조의 고속-고내압 SOI Smart Power 소자 설계에 관한 연구

  • 원명규 (서강대학교 전자공학과) ;
  • 구용서 (서경대학교 전자공학과) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 1999.06.01
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Abstract

In this paper, we report the process/device design of high-speed, high-voltage SOI smart power IC for mobile communication system, high-speed HDD system and the electronic control system of automobiles. The high voltage LDMOS with 70V breakdown voltage under 0.8${\mu}{\textrm}{m}$ design rule, the high voltage bipolar with 40V breakdown voltage for analog signal processing, the high speed bipolar with cut-off frequency over 20㎓ and LDD NMOS for high density were proposed and simulated on a single chip by the simulator DIOS and DESSIS. And we extracted the process/device parameters of the simulated devices.

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