• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.9-15
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• 2003

This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12" silicon wafer for spin etcher. Halogen lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and adaptive filtering. Test wafers with three kinds of priori-known films, polysilicon(300 nm), silicon-oxide(500 nm) and silicon-oxide(600 nm), are measured while the wafer is spinning at 20 Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 0.8% error.rror.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• 대한방사선기술학회지:방사선기술과학
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• 제46권3호
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• pp.187-195
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• 2023

A shield was made by mixing materials such as bismuth(Bi) and barium(Ba) with silicon to evaluate its shielding ability. Bismuth was made into a shield by mixing a bismuth oxide(Bi₂O₃) colloidal solution and a silicon base and applied to a fibrous fabric, and barium was made by mixing lead oxide(PbO) and barium sulfate(BaSO₄) with a silicon curing agent and solidifying it to make a shield. The test was conducted according to the lead equivalent test method for X-ray protective products of the Korean Industrial Standard. The experiment was conducted by increasing the shielding body one by one from the test condition of 60 kVp, 200 mA, 0.1sec and 100 kVp, 200 mA, 0.1 sec. At 60 kVp, 2 lead oxide-barium sulfate shields, 2 bismuth oxide 1.5 mm shields, and 5 bismuth oxide 0.3 mm shields showed shielding ability equal to or higher than that of lead 0.5 mm. At 100 kVp, 2 lead oxide-barium sulfate shields and 2 bismuth oxide 1.5 mm shields showed shielding ability equal to or higher than that of lead 0.5 mm. It was confirmed that when using 2 pieces of lead oxide-barium sulfate and 1.5 mm of bismuth oxide, respectively, it has shielding ability equivalent to that of lead. Bismuth oxide and lead oxide-barium sulfate are lightweight and have excellent shielding ability, thus they have excellent properties to be used as an apron for radiation protection or other shielding materials.

• 한국산학기술학회논문지
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• 제19권1호
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• pp.699-704
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• 2018

일차원 나노구조물은 양자 갇힘 효과 및 나노와이어가 갖는 체적 대비 높은 표면적 비에 기인하는 독특한 전기적, 광학적, 광전기적, 전기화학적 특성으로 인하여 많은 주목을 받아왔다. 특히 수직으로 성장된 나노와이어는 체적 대비 높은 표면적 비의 특성을 나타낸다. VLS(Vapor-Liquid-Soild) 공정은 나노구조물의 성장 과정에서 자기정렬 효과 때문에 더욱 주목을 받는다. 본 연구에서는 두 영역 열화학 기상증착법을 이용하여 Si\$SiO_2$(300 nm)\Pt 기판 위에 수직으로 정렬된 실리콘 옥사이드 나노기둥을 VLS 공정으로 성장시켰다. 성장된 실리콘 옥사이드 나노기둥의 형상과 결정학적 특성을 주사전자현미경 및 투과전자현미경으로 분석하였다. 그 결과 성장된 실리콘 옥사이드 나노기둥의 지름과 길이는 촉매 박막의 두께에 따라 변하였다. 실리콘 옥사이드 나노 기둥의 몸체는 비정질 상을 나타내었으며, Si과 O로 구성되어 있었다. 또한 성장된 실리콘 옥사이드 나노 기둥의 머리는 결정성을 나타내었으며, Si, O, Pt 및 Ti으로 구성되어 있었다. 실리콘 옥사이드 나노 기둥의 수직 정렬은 촉매물질인 Pt/Ti 합금의 결정성 정렬 선호에 기인하는 것으로 판단되며, 수직 성장된 실리콘 옥사이드 나노기둥은 기능성 나노소재로 활용이 가능할 것으로 기대된다.

• 대한기계학회논문집
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• 제19권4호
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• pp.1033-1040
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• 1995

To simulate strength reliability and durability of ceramic parts under gas turbine application environments, particle impact damage behaviors in silicon carbide oxidized at 1673 K and 1523 K for 200 hours in atmosphere were investigated. The long-term oxidation produced a slight increase in the static fracture strength. Particle impact caused a spalling of oxide layer. The patterns of spalling and damage induced were dependent upon the property and impact velocity of the particle. Especially, the difference in spalling behaviors induced could be explained by introducing the formation mechanism of lateral crack and elastic-plastic deformation behavior at impact sit. At the low impact velocity regions, the oxidized SiC showed a little increase in the residual strength due to the cushion effect of oxide layer, as compared with the as-received SiC without oxide layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.223-224
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• 2008

Important element are low cost, high-efficiency crystalline silicon solar cells. in this paper, Will be able to contribute in low cost, high-efficiency silicon solar cells, Applies oxide/nitride passivation, produced screen-printed solar cells. and the Measures efficiency, and evaluated a justice quality oxide/nitride passivation screen-printed solar cells.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.31-36
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• 2004

본 논문에서는 UV 처리와 BOE 세정을 이용하여 레이저 어닐링 전의 실리콘 표면에 자연 산화막을 제거하여 다결정 실리콘 TFT의 신뢰성을 향상시키는 방법을 제안하였다. 전처리 공정이 다결정 실리콘의 표면 거칠기에 미치는 영향을 AFM으로 측정하였으며, 다결정 실리콘 TFT의 전기적 특성인 스위칭 특성과 항복특성을 대형 유리기판의 위치와 전처리의 유무에 대해서 조사하였다.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.449-453
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• 2010

In this paper, the electrical characteristics of Fin-type SONOS(silicon-oxide-nitride-oxide-silicon) flash memory device with different trapping layers are analyzed in depth. Two kinds of trapping layers i.e., silicon nitride($Si_3N_4$) and hafnium oxide($HfO_2$) are applied. Compared to the conventional Fin-type SONOS device using the $Si_3N_4$ trapping layer, the Fin-type SOHOS(silicon-oxide-high-k-oxide-silicon) device using the $HfO_2$ trapping layer shows superior program/erase speed. However, the data retention properties in SOHOS device are worse than the SONOS flash memory device. Degraded data retention in the SOHOS device may be attributed to the tunneling leakage current induced by interface trap states, which are supported by the subthreshold slope and low frequency noise characteristics.

• 전자공학회논문지
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• 제52권8호
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• pp.59-63
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• 2015

본 연구에서는 MONOS 플래시 메모리의 blocking oxide/trapping nitride, trapping nitride/tunneling oxide 계면 트랩을 구하기 위해 C-V 방법을 도입하였고, stoichiometric 조건을 만족하는 nitride와 silicon rich nitride를 trapping layer로 갖는 MONOS capacitor를 제작하여 각각의 interface trap 특성을 비교분석하였다. 보고에 따르면 silicon rich nitride는 stoichiometric nitride에 비해 다수의 shallow trap이 존재한다고 보고되고 있는데, 본 연구를 통해 이의 정량화가 가능함을 보였다.