• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1039-1042
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• 2001

A method for designing antireflection (AR) and antistatic (AS) films by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR film is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The 3,4-polyethylenedioxythiophene (PEDOT) which has the sheet resistance of 10$^4$$\Omega$/$\square$ is used as a conductive layer. Optical constant of ARAS film was measured by the spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the visible region. The reflectance of ARAS films on glass substrate was below 0.8 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.189.1-189.1
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• 2013

Titanium dioxide (TiO2) is a wide bandgap semiconductor possessing photochemical stability and thus widely used for photocatalysis. However, enhancing photocatalytic efficiency is still a challenging issue. In general, the efficiency is affected by physio-chemical properties such as crystalline phase, crystallinity, exposed crystal facets, crystallite size, porosity, and surface/bulk defects. Here we propose an alternative approach to enhance the efficiency by studying interfaces between thin TiO2 layers to be stacked; that is, the interfacial phenomena influencing on the formation of porous structures, controlling crystallite sizes and crystallinity. To do so, multi-layered TiO2 thin films were fabricated by using a sol-gel method. Specifically, a single TiO2 thin layer with a thickness range of 20~40 nm was deposited on a silicon wafer and annealed at $600^{\circ}C$. The processing step was repeated up to 6 times. The resulting structures were characterized by conventional electron microscopes, and followed by carrying out photocatalytic performances. The multi-layered TiO2 thin films with enhancing photocatalytic efficiency can be readily applied for bio- and gas sensing devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1284-1287
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• 2007

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.1-8
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• 2002

In this paper, a thermopile which is applied to wide uses of temperature measuring was fabricated and its characteristic was improved by appling SOI structure to the fabrication. We improved characteristic of the thermopile by using single crystal silicon strips that has high seebeck coefficient and dielectric isolating the silicon strips from substrate with silicon dioxide film which dramatically decrease thermal conductivity between hot and cold junction compared to a silicon strip which was fabricated by ion implantation. The thermopile consists of 17 p-type single crystal silicon strips and 17 n-types by serial connection. The result of electromotive force measuring showed very good characteristic as 130mV/K when temperature difference between the two ends of the thermopile occurs by applying light on the thermopile fabricated with silicon strips of $1600{\mu}m$ length, $40{\mu}m$ width, $1{\mu}m$ thickness.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.560-564
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• 2003

Thick oxide layer was fabricated by anodic reaction and complex oxidation performed by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and a RTO (rapid thermal oxidation) process (105$0^{\circ}C$, 1 min). Electrical characteristics of OPSL (oxidized porous silicon layer) were almost the same as those of thermal silicon dioxide prepared at high temperature. The leakage current through the OPSL of 20${\mu}{\textrm}{m}$ thickness was about 100 - 500 ㎀ in the range 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the XPS analysis, surface and internal oxide films of OPSL prepared by complex process were confirmed completely oxidized and also the role of RTO process was important for the densification of PSL (porous silicon layer) oxidized at low temperature.

• Journal of Food Hygiene and Safety
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• v.32 no.5
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• pp.343-347
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• 2017

The analytical method of silicon dioxide ($SiO_2$) in health functional food products was developed employing inductively coupled plasma optical emission spectrometry (ICP-OES) method assisted by acid (hydrofluoric acid and boric acid) digestion in open system without alkali fusion. The limit of detection (LOD) and limit of quantification (LOQ) of this method were found to be 0.07 and 0.20 mg/L, respectively. Linearity ($r^2$) and linear range were 0.99 and 0.20~20.0 mg/L, respectively. The accuracy and precision of $SiO_2$ (0.4, 1.0, and 2.0%, w/w) in spiked glucosamine exhibited to be the range of 90.22~94.14% and 0.72~1.67%, respectively. The contents of $SiO_2$ in 11 health functional food products were detected in range of 0.02~1.80% (w/w). Every sample showed below content of the permitted use level (2%, w/w) of $SiO_2$. Therefore ICP-OES method with acid can analyze the content of $SiO_2$ in health functional food products easily and rapidly. Consequently, the application of specification analysis of $SiO_2$ in health functional food products could be a significant work.

• Journal of Life Science
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• v.31 no.5
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• pp.502-510
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• 2021

The objective of this study was to develop a novel ticagrelor-loaded self-nanoemulsifying drug delivery system with an enhanced solubility and dissolution rate. Numerous oils and surfactants were screened, then medium chain triglyceride (MCT) oil and the surfactants polyoxyethylene sorbitan monooleate (Tween 80) and Labrafil M1944CS were selected for the preparation of the ticagrelor-loaded self-nanoemulsifying drug delivery system. A pseudo-ternary phase diagram was constructed to detect the nanoemulsion region. Of the various formulations tested, the liquid SNEDDS, composed of MCT (oil), Tween 80 (surfactant), and Labrafil M1944CS (cosurfactant) at a weight ratio of 20/70/10 produced the smallest emulsion droplet size (around 20.56±0.70 nm). Then, particle size, polydispersity, and zeta potential were measured using drugs containing liquid SNEDDS. The selected ticagrelor-loaded liquid SNEDDS was spray-dried to convert it into a ticagrelor-loaded solid SNEDDS with a suitable inert carrier, such as silicon dioxide, calcium silicate, or magnesium aluminometasilicate. The solid SNEDDS was characterized by scanning electron microscopy, transmission electron microscopy, and in vitro dissolution studies. SEM, PXRD, and DSC results suggested that amorphous ticagrelor was present in the solid SNEDDS. Also, the solid SNEDDS significantly increased the dissolution rate of ticagrelor. In particular, the emulsion particle size and the polydispersity index of the solid SNEDDS using silicon dioxide (SS1) as a carrier was the smallest among the evaluated solid SNEDDS, and the flowability and compressibility result of the SS1 was the most suitable for the manufacturing of solid dosage forms. Therefore, solid SNEDDS using silicon dioxide (SS1) could be a potential nano-sized drug delivery system for the poorly water-soluble drug ticagrelor.

• Journal of information and communication convergence engineering
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• v.4 no.4
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• pp.155-157
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• 2006

This paper presents the thermal technique to improve characteristic of planar spiral inductors. The spiral inductors were fabricated on silicon dioxide/silicon (SiO2/Si) wafer. The thermal treatment was done by annealing processes. The measure results showed a considerable improvement of return loss (Sl1). This thermal treatment seems very promising for enhancing spiral inductors based RF IC's.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.36-36
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• 2010

Low-pressure fluorocarbon plasmas are widely used in microelectronics fabrication for a variety of surface modification purposes. In particular, fluorocarbon plasmas are used for the etching of dielectrics such as silicon dioxide and silicon nitride. Among the various fluorocarbons, this study focuses on C4F6 molecules (C4F6s) which are composed of hexafluorocyclobutene (c-C4F6), hexafluoro-1, 3-butadiene (1, 3-C4F6), and hexafluoro-2-butyne (2-C4F6). We have investigated the dissociation reactions of C4F6s, resulting in CF2, CF3, C2F3, and C3F3 fragments, by using the wB97X-D functional with various basis sets. In this presentation, the geometrical properties, energetics, and dissociation mechanisms of C4F6s will be suggested.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1483-1485
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• 2009

Silicon dioxide ($SiO_2$) thin films were deposited using a modified DBD called a "pin-to-plate-type DBD" in order to generate high-density plasmas with a gas mixture of PDMS/$O_2$. The effect of the gas mixture on the physical and chemical properties of $SiO_2$ deposited by the pin-to-plate-type DBD with the mixture of PDMS/$O_2$ was investigated.