한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Characteristics of MINOS Structure using $TiO_2$ as Blocking Layer for Nonvolatile Memory applicable to OLED

  • Lee, Kwang-Soo (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Jung, Sung-Wook (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Kyung-Hae (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Jang, Kyung-Soo (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Hwang, Sung-Hyun (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Jeoung-In (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Park, Hyung-Jun (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Jae-Hong (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Son, Hyuk-Joo (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Jun-Sin (School of Information and Communication Engineering, Sungkyunkwan University)
  • Published : 2007.08.27
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Abstract

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

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