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Effects of Thermal Treatment on the Characteristics of Spiral Inductors on Bragg Reflectors  

Mai, Linh (School of Information and Communications University (ICU))
Lee, Jae-Young (School of Information and Communications University (ICU))
Le, Minh-Tuan (School of Information and Communications University (ICU))
Pham, Van-Su (School of Information and Communications University (ICU))
Yoon, Gi-Wan (School of Information and Communications University (ICU))
Abstract
This paper presents the thermal technique to improve characteristic of planar spiral inductors. The spiral inductors were fabricated on silicon dioxide/silicon (SiO2/Si) wafer. The thermal treatment was done by annealing processes. The measure results showed a considerable improvement of return loss (Sl1). This thermal treatment seems very promising for enhancing spiral inductors based RF IC's.
Keywords
On-chip inductor; Post-annealing; Return loss (S11);
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