• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1996년도 한국자동제어학술회의논문집(국내학술편); 포항공과대학교, 포항; 24-26 Oct. 1996
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• pp.636-639
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• 1996

We have developed a part of hydraulic stroke sensing cylinder using magnetic sensor that can detect each position under severe construction fields. In this paper, for evaluating the developed cylinder under various environment condition, thermal control systems and two hydraulic systems to be coupled consist of. The former is composed of an heater case, temperature sensor, and interface circuits which include SCR(silicon controlled rectifier) for the control of the voltage's phase. The latter is composed of an hydraulic cylinder for position control with solenoid valve (ON/OFF motion) and a load cylinder with proportional reducing valve. To obtain the various performance evaluation, it is carried out under high temperature condition in thermal system controlled by using Ziegler-Nichols PID tuning method and artificial disturbances such as impulse or constant force. The results show that the developed cylinder has good performance under the various environment condition.

• Journal of Advanced Marine Engineering and Technology
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• 제40권4호
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• pp.348-352
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• 2016

본 논문은 적정 전압 여자를 적용한 스위치드 릴럭턴스 전동기의 효율 개선에 대하여 기술한다. 세탁기와 같이 적용 속도에 큰 차이가 있는 부하의 경우 일정한 직류링크전압으로는 효율 개선에 어려움이 있다. 저속운전영역에서 과도한 직류전압의 영향을 줄이기 위해 보통 사용되고 있는 구동회로내의 다이오드 정류기 대신 SCR을 사용한 AC-DC 컨버터가 SRM 드라이버에 포함된다. AC-DC 컨버터는 저속에 알맞은 적정한 여자전압을 공급한다. 실험결과를 통하여 저속영역에서 효율이 개선됨을 확인하였다.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권6호
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• pp.304-308
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• 2002

We demonstrate a simple pulsed $CO_2$ laser with millisecond long pulse duration in a tube at a low pressure of less than 30 Torr. The novel power supply for our laser system switches the voltage of the AC power line (60Hz) directly. The power supply doesn't need elements such as a rectifier bridge, energy-storage capacitors, or a current-limiting resistor in the discharge circuit. To control the laser output power, the pulse repetition rate is adjusted up to 60Hz and the firing angle of SCR(Silicon Controlled Rectifier) gate is varied from 30。 to 150。. A ZCS (Zero Crossing Switch) circuit and a PIC one-chip microprocessor are used to control precisely the gate signal of the SCR. The maximum laser output of 35 W is obtained at a total pressure of 18 Torr, a pulse repetition rate of 60 Hz, and a SCR gate firing angle of 90。 . In addition, the resulting laser pulse width is approximately 3㎳(FWHM). This is a relatively long pulse width, compared with other repetitively pulsed $CO_2$ lasers.

• 전기의세계
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• 제18권3호
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• pp.34-39
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• 1969

종래 사용되어온 교류발전기의 자동전압조정기는 직류여자기의 계자전류를 제어함으로써 교류 발전기의 단자전압을 일정하게 유지하는 방식이었다. 이경우 정정시의 전압변동을 적게하는 것은 비교적 용이하지만 급격한 부하변동에 대해서는 불경하였다. 즉 발전기에 급히 부하가 걸리면 발전기의 특성에 의하여 결정되는 전압이 순간적으로 떨어지고 또 발전기에는 복권작용이 없고 직류여자기및 제어장치의 시정수에 의한 조정작용의 시간적 늦음이 있기때문에 발전기의 전압은 더욱 강하한다. 이 전압강하의 방지책으로 발전기를 필요이상 크게하여 단종비를 크게하고 또 속응여자를 행하고 있다. 그리고 발전기의 부하가 유도전동기이 가능한 것은 소용량에 한하고 거의 모두 감압기동을 하고 있었다. 이 난점을 보상하기 위해 주회로전류에 의한 복권특성을 갖는 자여자교류발전기가 개발되어 왔으며 근래에는 S.C.R (Silicon Controlled Rectifier)의 발달에 따라 자기증폭기식에서 Transistor-Thyristor식으로 변천하고 있다. 여기서는 자여자발전기를 이용한 정전압장치부 자려자교류벌전기 75KVA에 대한 특성을 소개하고자 한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.339-344
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• 2014

This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) $0.18{\mu}m$. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately $1.6{\Omega}$. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.589-590
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• 2006

A novel Triple-Well P-type Triggered Silicon Controlled Rectifier (TWPTSCR) for on-chip ESD protection implemented with a triple-well CMOS technology is presented. Unlike conventional SCR devices, the proposed TWPTSCR offers a reduced triggering voltage level as well as the enhanced ESD performance of the SCR devices. From the experimental results, the TWPTSCR with a device width of 20um has the triggering voltage of 1.1V.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.587-588
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• 2006

This paper presents the new structural zener triggered silicon-controlled rectifier (ZTSCR) electrostatic discharge (ESD) protection circuit. The proposed ESD protection circuit has lower triggering voltage than conventional circuits. The proposed ZTSCR has the triggering voltage of 4V. In the ESD event, this proposed novel ZTSCR ESD protection device could trigger quickly and provide an effective discharging path.

• Journal of Power Electronics
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• 제12권6호
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• pp.947-953
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• 2012

The latch-up immunity of the high voltage power clamps used in high voltage ESD protection devices is very becoming important in high-voltage applications. In this paper, a stacking structure with a high holding voltage and a high failure current is proposed and successfully verified in 0.18um CMOS and 0.35um BCD technology to achieve the desired holding voltage and the acceptable failure current. The experimental results show that the holding voltage of the stacking structure can be larger than the operation voltage of high-voltage applications. Changes in the characteristics of the stacking structure under high temperature conditions (300K-500K) are also investigated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 B
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• pp.1088-1090
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• 2001

In general, Power SCR(Silicon Controlled Rectifier) is most widely used in Power Plant as well as Industrial field. It has been controlled and operated according to its own control method. Especially, in case of Power plant, it plays a major role in AVR(Automatic Voltage Regulator) or electro chlorination control circuits. Generally, they used in Analog control system at above field. But each SCR current value is different because of load unbalance or switching characteristic variations, it may cause power plant unit trip or system disorder according to SCR element burn out or bad operating condition. Therefore, in this paper a development of 3 phase current balance control unit is described, it gets over the past analog control system limit, uses DSP(Digital signal processor) had high speed response, controls SCR gate firing angle for 3 phase current balance.

• 전기전자학회논문지
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• 제21권3호
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• pp.234-239
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• 2017

본 논문에서는 PMOS 구조를 삽입한 새로운 구조의 SCR(Silicon Controlled Rectifier)기반 ESD(Electrostatic Discharge) 보호소자를 제안한다. 제안된 ESD 보호회로는 내부에 PMOS가 추가적으로 형성된 구조적 특징을 지니며, Latch-up 면역 특성과 향상된 감내특성을 갖는다. TCAD 시뮬레이션을 이용하여 기존의 ESD 보호회로와 특성을 비교 분석하였다. 시뮬레이션 분석 결과, 제안된 보호 ESD 보호회로는 기존 SCR 기반 ESD 보호소자 HHVSCR(High Holding Voltage SCR)과 같은 우수한 Latch-up 면역 특성을 지닌다. 또한 HBM(Human Body Model) 최대온도 테스트 결과에 따르면, 제안된 ESD 보호회로는 355K의 최대온도 수치를 가지며, 이는 기존 HHVSCR의 373K와 비교하여 대략 20K가량 낮은 온도특성으로, 더욱 향상된 감내특성을 갖는 것으로 확인되었다. 제안된 ESD 보호소자는 N-STACK 기술을 적용하여 설계하여 전압별 적용이 가능함을 시뮬레이션을 통하여 검증하였다. 시뮬레이터로 시뮬레이션을 해본 결과, 제안된 ESD 보호회로는 단일 구조에서 2.5V의 홀딩전압 특성을 지니며, N배수의 증배에 따라 2-STACK 4.2V, 3-STACK 6.3V, 4-STACK 9.1V로 증가된 홀딩전압을 갖는 것을 확인하였다.