• Korean Journal of Metals and Materials
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• v.48 no.10
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• pp.942-950
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• 2010

The microstructure and mechanical properties of a Cu-Fe-P copper alloy processed by differential speed rolling (DSR) were investigated in detail. The copper alloy, with a thickness of 3 mm, was rolled to 50% reduction at ambient temperature without lubrication with a differential speed ratio of 2.0:1 and then annealed for 0.5h at various temperatures ranging from 100 to $800^{\circ}C$. Conventional rolling was performed under the same rolling conditions for comparison. The shear strain introduced by the conventional rolling process showed positive values at the positions of the upper roll side and negative values at the positions of the lower roll side. However, the result was zero or positive values at all positions for samples rolled by DSR. The effects of DSR on the microstructure and mechanical properties of the as-rolled and subsequently annealed samples are discussed.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.910-915
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• 2011

The microstructures and mechanical properties of roll-bonded STS439/Al1050/STS304 clad materials were investigated after an annealing process at various temperatures. Interfacial layer was developed at the STS439/Al1050 and Al1050/STS304 interfaces at $550^{\circ}C$. STS439/Al1050/STS304 clad metals fractured suddenly in a single step and the fracture decreased with increasing annealing temperatures at $450^{\circ}C$. After annealing at $550^{\circ}C$, samples fractured in three steps with each layer fracturing independently. Interfacial layers formed at $550^{\circ}C$ with a high Vickers microhardness were found to be brittle. During tensile testing, periodic parallel cracks were observed at the interfacial reaction layer. Observed micro-void between Al1050 and the interfacial layer was found to weaken the Al1050/reaction layer interface, leading to the total separation between Al1050 and the reaction layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1739-1743
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• 2006

Recent advances in the microstructural modification of metal films using excimer laser projection irradiation and lateral resolidification are discussed. Pure copper films have been directionally resolidified into large sheet-like grains when properly encapsulated for suppression of liquid-phase dewetting. A survey and quantitative assessment of the defects found in these icrostructures, typical for rapidly solidified metals, is presented.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.03b
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• pp.153.1-156
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• 1999

Based upon the experimental data from multi-stage tensile loading at angles to the rolling direction of steel sheets, anisotropic hardening rules are proposed. Experiments show that orthotropic anisotropy is maintained and the orientations of orthotropy axes are changed during tensile loading. A phenomenological model is proposed which includes the rotations of orthotropy axes, work hardening and kinematic hardening. Using the model, uniaxial tensile stress, R-value and tensile necking strain are predicted and compared with the experimental data.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1995.03a
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• pp.78-89
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• 1995

Phenomelocial evidences for three-dimensional crystallizing $\pi$-bondings are investigated in case of the soft layer very near the suface of the metal , the surface layer of certain crystaline thermoplastics. the increased contact area of the metalic frictional interface and the delaminated sheet-like wear particles of the metal . The wear mechanisms are the cracks at the boundaries of the grains and their propagations parallel to the surface. The cracks are made by the reorientations of the atoms in the grains and the rotations of the grains.

• Journal of Magnetics
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• v.3 no.2
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• pp.44-48
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• 1998

Scanning Electron Microscopy with Polarization Analysis (SEMPA) was used to image the surface magnetic domain structure of the 100 ${\mu}{\textrm}{m}$ thick 3% Si-Fe sheet. The thin-gauged 3% Si-Fe strips with magnetic induction ($B_{10}$) from 1.98 to 1.57 Tesla were prepared via conventional metallurgical processes including melting, hot-and cold-rolling, intermediate annealing and final annealing. Using SEMPA, it was observed that the $B_{10}$ (1.98 T) Tesla sample was almost composed of 180$^{\circ}$ stripe domains which are parallel to rolling direction. On the other hand the 3% Si-Fe sheet with $B_{10}$ (1.57 T) Tesla was composed of large 180$^{\circ}$stripe domains that are slanted about 30$^{\circ}$to the rolling direction and complex magnetic domain structures like tree and zigzag pattern. The 180$^{\circ}$stripe domains, which covered a major part of the sample, had (110)<001> Goss texture parallel to the rolling direction. The domain walls between 180$^{\circ}$stripe domains were the conventional Bloch type walls. On the other hand, the 90$^{\circ}$domains, which covered minor part on edge of the sample, were observed in (200) grains. The domain walls between 90$^{\circ}$domains were the Neel type walls. In high magnification, the elliptical singularity at the Neel walls was clearly observed.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.747-754
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• 2008

Recently, the requirement for the ultra thin copper foil increases with smaller and miniaturized electronic components. Therefore, it is important to examine the surface state of substrate depending on the processing parameter during the anodic oxidation. This study investigated the effect of the various electrolyte concentrations on anodizing of titanium anode prior to copper electrodeposition. Different surface morphology of anodized titanium was obtained at different electrolytic concentration 0.5 M to 3.0 M. In addition, the effect that the surfaces and the electrical characteristics on the electrodeposited copper layer was observed. In this study, surface anodized in the group containing 0.5M $H_2SO_4$ shows more uniform copper crystals with low surface roughness. the surface roughness and sheet resistance for 0.5M $H_2SO_4$ group were $1.353{\mu}m$ and $0.104m{\Omega}/sq$, respectively.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.69-79
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• 2008

A composition consisting of 10 nm-Ni/1 nm-Pd/(30 nm or 70 nm-poly)Si was thermally annealed using rapid thermal for 40 seconds at $300{\sim}1100^{\circ}C$ to improve the thermal stability of conventional nickel monosilicide. The annealed bilayer structure developed into $Ni(Pd)Si_x$, and the resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness were investigated. The silicide, which formed on single crystal silicon, could defer the transformation of $NiSi_2$, and was stable at temperatures up to $1100^{\circ}C$. It remained unchanged on polysilicon substrate compared with the sheet resistance of conventional nickel silicide. The silicides annealed at $700^{\circ}C$, formed on single crystal silicon and 30 nm polysilicon substrates exhibited 30 nm-thick uniform silicide layers. However, silicide annealed at $1,000^{\circ}C$ showed preferred and agglomerated phase. The high resistance was due to the agglomerated and mixed microstructures. Through X-ray diffraction analysis, the silicide formed on single crystal silicon and 30 nm polysilicon substrate, showed NiSi phase on the entire temperature range and mixed phases of NiSi and $NiSi_2$ on 70 nm polysilicon substrate. Through scanning probe microscope (SPM) analysis, we confirmed that the surface roughness increased abruptly until 36 nm on 30 nm polysilicon substrate while not changed on single crystal and 70 nm polysilicon substrates. The Pd-inserted nickel monosilicide could maintain low resistance in a wide temperature range and is considered suitable for nano-thick silicide processing.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.88-96
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• 2008

Thermal evaporated 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films were deposited to examine the energy saving properties of silicides formed by rapid thermal annealing at temperature ranging from 500 to $1,100^{\circ}C$ for 40 seconds. Thermal evaporated 10 nm-Ni/(70 nm-poly)Si films were also deposited as a reference using the same method for depositing the 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films. A four-point probe was used to examine the sheet resistance. Transmission electron microscopy (TEM) and X-ray diffraction XRD were used to determine cross sectional microstructure and phase changes, respectively. UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were used to examine the near-infrared (NIR) and middle-infrared (MIR) absorbance. TEM analysis confirmed that the uniform nickel-cobalt composite silicide layers approximately 21 to 55 nm in thickness had formed on the single and polycrystalline silicon substrates as well as on the 25 to 100 nm thick nickel silicide layers. In particular, nickel-cobalt composite silicides showed a low sheet resistance, even after rapid annealing at $1,100^{\circ}C$. Nickel-cobalt composite silicide and nickel silicide films on the single silicon substrates showed similar absorbance in the near-IR region, while those on the polycrystalline silicon substrates showed excellent absorbance until the 1,750 nm region. Silicides on polycrystalline substrates showed high absorbance in the middle IR region. Nickel-cobalt composite silicides on the poly-Si substrates annealed at $1,000^{\circ}C$ superior IR absorption on both NIR and MIR region. These results suggest that the newly proposed $Ni_{50}Co_{50}$ composite silicides may be suitable for applications of IR absorption coatings.

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.133-140
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• 2010

10 nm thick Ni layers were deposited on 200 nm $SiO_2/Si$ substrates using an e-beam evaporator. Then, 60 nm or 20 nm thick ${\alpha}$-Si:H layers were grown at low temperature (<$200^{\circ}C$) by a Catalytic-CVD. NiSi layers were already formed instantaneously during Cat-CVD process regardless of the thickness of the $\alpha$-Si. The resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness with the additional rapid thermal annealing up to $500^{\circ}C$ were examined using a four point probe, HRXRD, FE-SEM, TEM, AES, and SPM, respectively. The sheet resistance of the NiSi layer was 12${\Omega}$/□ regardless of the thickness of the ${\alpha}$-Si and kept stable even after the additional annealing process. The thickness of the NiSi layer was 30 nm with excellent uniformity and the surface roughness was maintained under 2 nm after the annealing. Accordingly, our result implies that the low temperature Cat-CVD process with proposed films stack sequence may have more advantages than the conventional CVD process for nano scale NiSi applications.