• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.223-239
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• 1990

This paper presents an overview on the present status and future trends of photonic physics and engineering as applicable to optical materials and devices that would enable optical information processing and optical commmication technologies of the future. Covered subjects include semiconductor quantum devices, organic materials, photorefractive physics, quantum effect, non-linear processing optical amplification, memory, integrated optics, and applications in all-optical communications and processing, including photonic switching.

• Korean Journal of Optics and Photonics
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• v.13 no.1
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• pp.84-87
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• 2002

By using SOA (Semiconductor Optical Amplifier), all-optical XOR gate has been demonstrated at 5 Gb/s in RZ format. Firstly, Boolean AB-and Boolean AB have been obtained. Then, Boolean AB and Boolean AB have been combined to achieve the all-optical XOR gate, which has Boolean logic of AB+AB.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.5
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• pp.331-337
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• 2014

Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in $N_2$, forming gas (FG), and $O_2$ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the $O_2$-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the $O_2$ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.116-126
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• 2009

It is becoming more difficult to improve the device operating speed by shrinking the size of semiconductor devices. Therefore, for a new leap forward in the semiconductor industry, the advent of silicon opto-electronic devices, i.e., silicon photonics is more desperate. Silicon Avalanche LED is one of the prospective candidates to realize the practical silicon opto-electronic devices due to its simplicity of fabrication, repeatability, stability, high speed operation, and compatibility with silicon IC processing. We conducted the measurement of the electrical characteristics and the observation of the light-emitting phenomena using optical microscopy. We analyzed the influence of the design elements such as the shape of the light-emitting area and the depth of the $n^{+}-p^{+}$ junction with simple device modeling and simulation. We compared the results of simulation and the measurement and explained the discrepancy between the results of the simulation and the measurement, and the suggestions for the improvement were given.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.7 s.349
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• pp.1-6
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• 2006

We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.

• Journal of IKEEE
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• v.19 no.4
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• pp.541-547
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• 2015

In current semiconductor manufacturing, as the feature size of integrated circuit (IC) devices continuously shrinks, detecting endpoint in plasma etching process is more difficult than before. For endpoint detection, various kinds of sensors are installed in semiconductor manufacturing equipments, and sensor data are gathered with predefined sampling rate. Generally, detecting endpoint is performed using OES data of by-product. In this study, OES data of both by-product and etchant gas are used to improve reliability of endpoint detection. For the OES data pre-processing, a combination of Signal to Noise Ratio (SNR) and Principal Component Analysis (PCA),are used. Polynomial Regression and Expanded Hidden Markov model (eHMM) technique are applied to pre-processed OES data to detect endpoint.

• Journal of the Korea Convergence Society
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• v.8 no.8
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• pp.9-15
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• 2017

With the development of semiconductor integration technology, central processing units and storage devices have been miniaturized and performance has been rapidly developed, interconnection network technology is becoming a more important factor in terms of the performance of high performance computing system. In this paper, we analyze the trend of interconnection network technology used in high performance computing. Interconnect technology, which is the most widely used in the Supercomputer Top 500(2017. 06.), is an Infiniband. Recently, Ethernet is the second highest share after InfiniBand due to the emergence of 40/100Gbps Gigabit Ethernet technology. Gigabit Ethernet, where latency performance is lower than InfiniBand, is preferred in cost-effective medium-sized data centers. In addition, top-end HPC systems that demand high performance are devoting themselves from Ethernet and InfiniBand technologies and are attempting to maximize system performance by introducing their own interconnect networks. In the future, high-performance interconnects are expected to utilize silicon-based optical communication technology to exchange data with light.