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5 Gb/s all-optical XOR gate by using semiconductor optical amplifier

Semiconductor Optical Amplifier를 이용한 5 Gb/s전광 XOR논리소자

  • 김재헌 (한국과학기술연구원, 광기술연구센터) ;
  • 변영태 (한국과학기술연구원, 광기술연구센터) ;
  • 전영민 (한국과학기술연구원, 광기술연구센터) ;
  • 이석 (한국과학기술연구원, 광기술연구센터) ;
  • 우덕하 (한국과학기술연구원, 광기술연구센터) ;
  • 김선호 (한국과학기술연구원, 광기술연구센터)
  • Published : 2002.02.01

Abstract

By using SOA (Semiconductor Optical Amplifier), all-optical XOR gate has been demonstrated at 5 Gb/s in RZ format. Firstly, Boolean AB-and Boolean AB have been obtained. Then, Boolean AB and Boolean AB have been combined to achieve the all-optical XOR gate, which has Boolean logic of AB+AB.

SOA (Semiconductor Optical Amplifier)의 inverter 원리를 응용하여 RZ 형식의 전광 XOR논리소자가 5 Gb/s 속도에서 처음으론 구현되었다. 먼저 Boolean AB와 Boolean AB가 실험적으로 구현되었으며 전광 XOR논리소자를 만들기 위해서 AB와 AB를 합하여 XOR의 Boolean 값인 AB+AB의 특성이 얻어졌다.

Keywords

References

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