• Title/Summary/Keyword: saturated output power

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Design of High Efficiency Switching-Mode Doherty Power Amplifier Using GaN HEMT (GaN HEMT를 이용한 고효율 스위칭 모드 도허티 전력증폭기 설계)

  • Choi, Gil-Wong;Kim, Hyoung-Jong;Choi, Jin-Joo;Kim, Seon-Joo
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.9 no.5
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    • pp.72-79
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    • 2010
  • In this paper, we describe the design and implementation of a high efficiency Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT). The carrier and peaking amplifiers of the proposed Doherty power amplifier consist of the switching-mode Class-E power amplifiers. The test conditions are a duty of 10% and a pulse width of $100\;{\mu}s$ and pulse repetition frequency (PRF) of 1 kHz for a S-band radar application. A RF performance peak PAE of 64% with drain efficiency of 80.6%, at 6 dB output back-off point from saturated output power of 45.5 dBm, was obtained at 2.85 GHz.

2~6 GHz Wideband GaN HEMT Power Amplifier MMIC Using a Modified All-Pass Filter (수정된 전역통과 필터를 이용한 2~6 GHz 광대역 GaN HEMT 전력증폭기 MMIC)

  • Lee, Sang-Kyung;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.7
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    • pp.620-626
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    • 2015
  • In this paper, a 2~6 GHz wideband GaN power amplifier MMIC is designed and fabricated using a second-order all-pass filter for input impedance matching and an LC parallel resonant circuit for minimizing an output reactance component of the transistor. The second-order all-pass filter used for wideband lossy matching is modified in an asymmetric configuration to compensate the effect of channel resistance of the GaN transistor. The power amplifier MMIC chip that is fabricated using a $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors, Corp. is $2.6mm{\times}1.3mm$ and shows a flat linear gain of about 13 dB and input return loss of larger than 10 dB. Under a saturated power mode, it also shows output power of 38.6~39.8 dBm and a power-added efficiency of 31.3~43.4 % in 2 to 6 GHz.

2~16 GHz GaN Nonuniform Distributed Power Amplifier MMIC (2~16 GHz GaN 비균일 분산 전력증폭기 MMIC)

  • Bae, Kyung-Tae;Lee, Ik-Joon;Kang, Hyun-Seok;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.11
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    • pp.1019-1022
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    • 2016
  • In this paper, a 2~16 GHz GaN wideband power amplifier MMIC s designed and fabricated using the nonuniform power amplifier design technique that utilizes drain shunt capacitors to simultaneously provide each transistor with the optimum load impedance and phase balance between input and output transmission lines. The power amplifier MMIC chip that is fabricated using the $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors occupies an area of $3.9mm{\times}3.1mm$ and shows a linear gain of larger than 12 dB and an input return loss of greater than 10 dB. Under a continuous-wave mode, it has a saturated output power of 36.2~38.5 dBm and a power-added efficiency of about 8~16 % in 2 to 16 GHz.

DCS Model Calculation for Steam Temperature System

  • Hwang, Jae-Ho
    • 제어로봇시스템학회:학술대회논문집
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    • 2004.08a
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    • pp.1201-1204
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    • 2004
  • This paper suggests a DCS (Distributed Control System) model for steam temperature system of the thermal power plant. The model calculated within sectional range is linear. In order to calculate mathematical models, the system is partitioned into two or three sectors according to its thermal conditions, that is, saturated water/steam and superheating state. It is divided into three sections; water supply, steam generation and steam heating loop. The steam heating loop is called 'superheater' or steam temperature system. Water spray supply is the control input. A first order linear model is extracted. For linear approach, sectional linearization is achieved. Modeling methodology is a decomposition-synthetic technique. Superheater is composed of several tube-blocks. For this block, linear input-output model is to be calculated. Each tiny model has its transfer function. By expanding these block models to total system, synthetic DCS linear models are derived. Control instrument include/exclude models are also considered. The resultant models include thermal combustion conditions, and applicable to practical plant engineering field.

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Anti-windup Integral-Proportional Controller for Variable-Speed Motor Drives

  • Park, Jong-Gyu;Chung, Jae-ho;Shin, Hwi-Beom
    • Journal of Power Electronics
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    • v.2 no.2
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    • pp.130-138
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    • 2002
  • The windup phenomenon appears and degrades control performance when a controller with integrating action is used and plant input is limited. An anti-windup integal-proportional(IP) controller is proposed for the variable-speed moter drives and it is experimentally applied to the speed control of a vector-controlled induction moter driven by a pulse width modulated (PWM) voltage source inverter (VSI). The consistency range of the IP controller is firstly derived and the intergal state is controlled to salisfy always the consistency range according to whether the the controller output is saturated or not. Although the operating condition like moter load or speed command is changed under the limited plant input, It is expermentally verified that the speed response has much improved performance, such as no overshoot and fast settling time, and the maximmum plant input is also effectively utilized.

A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT (내부정합된 GaN-HEMT를 이용한 2.65 GHz Doherty 전력증폭기)

  • Kang, Hyunuk;Lee, Hwiseob;Lim, Wonseob;Kim, Minseok;Lee, Hyoungjun;Yoon, Jeongsang;Lee, Dongwoo;Yang, Youngoo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.3
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    • pp.269-276
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    • 2016
  • This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.

Asymmetric Saturated 3-Stage Doherty Power Amplifier Using Envelope Tracking Technique for Improved Efficiency (효율 향상을 위해 포락선 추적 기술을 이용한 비대칭 포화 3-Stage 도허터 전력 증폭기)

  • Kim, Il-Du;Jee, Seung-Hoon;Moon, Jung-Hwan;Son, Jung-Hwan;Kim, Jung-Joon;Kim, Bum-Man
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.8
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    • pp.813-822
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    • 2009
  • We have investigated operation of a 1:2:2 asymmetric 3-stage Doherty PA(Power Amplifier) and implemented using the Freescale's 4 W, 10 W PEP LDMOSFETS at 1 GHz. By employing the three peak efficiency characteristics, compared to the two peak N-way Doherty PA, the asymmetric 3-stage Doherty can overcome the serious efficiency degradation along the backed-off output power region and maximize the average efficiency for the modulation signal. To maximize the efficiency characteristic, the inverse class F PA has been designed as carrier and peaking amplifiers. Furthermore, to extract the proper load modulation operation, the adaptive gate bias control signal has been applied to the two peaking PAs based on the envelope tracking technique. For the 802.16e Mobile WiMAX(World Interoperability for Microwave Access) signal with 8.5 dB PAPR(Peak to Average Power Ratio), the proposed Doherty PA has shown 55.46 % of high efficiency at an average output power of 36.85 dBm while maintaining the -37.23 dB of excellent RCE(Relative Constellation Error) characteristic. This is the first time demonstration of applying the saturated PA and adaptive gate bias control technique to the asymmetric 3-stage Doherty PA for the highly efficient transmitter of the base-station application.

A Development of the X-Band 63 Watt Pulsed SSPA for Radar (레이더용 X-대역 63 Watt Pulsed SSPA 개발)

  • Chong, Min-Kil;Na, Hyung-Gi
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.3
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    • pp.380-388
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    • 2011
  • In this paper, we developed the X-band 63 watt pulsed SSPA(Solid State Power Amplifier) by using HMIC(Hybrid Microwave Integrated Circuits). The pulsed SSPA consists of power supply and 3-stage amplifier modules : pre-amplifier stage, driver-amplifier stage, final-amplifier stage. The developed pulsed SSPA provides more than 63 watts of output power with a short pulse width and the duty cycle of up to 1.2 % at $70^{\circ}C$. The fabricated module offers great than 37 dB of saturated gain across the operating band. Input and output VSWR is <1.5:1. This module has an average current of 400 mA typical and operates at a +28 $V_{dc}$ supply. The developed SSPA in this paper can apply to pulsed Doppler radar with high speed operation.

Output Optimization of Microhydro Kaplan Turbine by Double Regulating Runner and Guide Vane (러너와 가이드 베인의 연동을 통한 마이크로 카프란 수차의 출력 최적화)

  • Park, No-Hyun;Rhee, Young-Woo
    • The KSFM Journal of Fluid Machinery
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    • v.16 no.1
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    • pp.17-23
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    • 2013
  • Recently so much attention has been focused on renewable energy and, since its sources to exploit are already almost saturated in the country, the practical alternative to this situation could be a micro-turbine which uses the low head and low flow. From a point of view of local micro-turbine design capacity and manufacturing technology, the problems such as the accumulation of technical skills, the expansion of related industries, the national policy expansion and the turbine efficiency to improve are still vulnerable and it's true that there are also negative views about the economic feasibility, the technicity and the operation management of the micro-turbine. However, if the improvement can be done in technology of low-head double regulation micro-turbine to generate more outputs and the operation management can be reliably realized, the micro-turbine will be re-evaluated as an appliable source of renewable energy, even the output is small, and by a paradigm shift, it could realize a power generation as an economic and rational system.

Load Resistance Influence of Magnetoelectric Characteristics on NiZnFe2O4+PZT Composites for Magnetoelectric Sensors

  • Ryu, Ji-Goo;Chung, Su-Tae
    • Journal of Sensor Science and Technology
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    • v.22 no.6
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    • pp.379-386
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    • 2013
  • The influences of the load resistance $R_L$ on the magnetoelectric (ME) characteristics of $NiZnFe_2O_4+PZT$ composite were investigated in the non-resonance frequency range. The ME coefficient peak increases with increasing $R_L$, but the frequency indicating the ME coefficient peak decreases with increasing $R_L$. The maximum output power peak is approximately $9.3{\times}10^{-10}mW/Oe$ near $R_L=3.3M{\Omega}$ at f=280 Hz, and the ME coefficient seems to be saturated at $R_L&gt;20M{\Omega}$. This frequency shift effect of $R_L$ shows that the frequency range for an ME sensor application can be modulated with the appropriate value of $R_L$. The ME output voltage has a good linear response to the ac field Hac and shows fair stability over a range of temperatures. The measured non-linearity of this sample is approximately 0.8%. This sample will allow for a low-strength magnetic ac-field sensor. The result from this sample will serve as basic data for a signal-processing circuit system.