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Design of High Efficiency Switching-Mode Doherty Power Amplifier Using GaN HEMT  

Choi, Gil-Wong (광운대학교 전파공학과)
Kim, Hyoung-Jong (광운대학교 전파공학과)
Choi, Jin-Joo (광운대학교 전자융합공학과)
Kim, Seon-Joo (국방과학연구소)
Publication Information
The Journal of The Korea Institute of Intelligent Transport Systems / v.9, no.5, 2010 , pp. 72-79 More about this Journal
Abstract
In this paper, we describe the design and implementation of a high efficiency Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT). The carrier and peaking amplifiers of the proposed Doherty power amplifier consist of the switching-mode Class-E power amplifiers. The test conditions are a duty of 10% and a pulse width of $100\;{\mu}s$ and pulse repetition frequency (PRF) of 1 kHz for a S-band radar application. A RF performance peak PAE of 64% with drain efficiency of 80.6%, at 6 dB output back-off point from saturated output power of 45.5 dBm, was obtained at 2.85 GHz.
Keywords
GaN HEMT; High-Efficiency; switching-mode; class-E power amplifier and doherty amplifier;
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