The Journal of The Korea Institute of Intelligent Transport Systems (한국ITS학회 논문지)

The Korea Institute of Intelligent Transport Systems (한국ITS학회)
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Design of High Efficiency Switching-Mode Doherty Power Amplifier Using GaN HEMT

GaN HEMT를 이용한 고효율 스위칭 모드 도허티 전력증폭기 설계

  • Received : 2010.08.04
  • Accepted : 2010.10.01
  • Published : 2010.10.31
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Abstract

In this paper, we describe the design and implementation of a high efficiency Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT). The carrier and peaking amplifiers of the proposed Doherty power amplifier consist of the switching-mode Class-E power amplifiers. The test conditions are a duty of 10% and a pulse width of $100\;{\mu}s$ and pulse repetition frequency (PRF) of 1 kHz for a S-band radar application. A RF performance peak PAE of 64% with drain efficiency of 80.6%, at 6 dB output back-off point from saturated output power of 45.5 dBm, was obtained at 2.85 GHz.

본 논문은 GaN HEMT (Gallium Nitride High Electron Mobility Transistor)를 이용하여 Class-E 스위칭 모드를 적용한 S-대역 레이더용 고효율 스위칭 도허티 전력증폭기를 설계 및 제작하였다. 제안된 도허티 전력증폭기는 캐리어 증폭기와 피킹 증폭기가 고효율 특성을 갖는 Class-E 스위칭 모드로 구성되었다. 측정을 위한 입력 RF 신호는 $100\;{\mu}s$의 펄스폭과 1 kHz의 PRF (Pulse Repetition Frequency)인 duty 10%인 펄스 신호를 사용하였다. 2.85 GHz의 주파수 대역에서 스위칭 도허티 전력증폭기 측정결과 포화전력에서 6 dB 떨어진 지점의 전력부가 효율 (power-added efficiency, PAE) 및 드레인 효율 (drain efficiency)은 각각 64%와 80.6%로 측정되었다.

Keywords

References

  1. F. H. Rabb, P. Asbeck, S. Cripps, P. B. Kenington and Z. B. Popovic, "Power amplifier and transmitters for RF and microwave," IEEE Trans. Microwave Theory Tech., vol. 50, no. 3, pp. 814-826, Mar. 2002. https://doi.org/10.1109/22.989965
  2. J. van Bezouwen, "System Trends in Ground Based Active Phased Array Radar," 38th European Microwave Conf. Workshop Handouts-WTH-13, pp. 27-31 Oct. 2008.
  3. T. Quach, et al., "Broadband Class-E Power Amplifier for Space Radar Application," IEEE GaAs IC Symp. Dig., pp. 209-213, Oct. 2001.
  4. Y. Yang, J. Yi, Y. Y. Woo and B. Kim, "Experimental investigation on efficiency and linearity of microwave Doherty amplifier," 2001 IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, pp. 1367-1370, 20-25, May 2001.
  5. J. Y. Lee, J. Y. Kim, J. H. Kim, K. J. Cho and S. P. Stapleton, "A high power asymmetric doherty amplifier with improved linear dynamic range," in IEEE MTT-S Int. Microwave Symp. Dig., pp. 1348-1351, June 2006.
  6. Jr. S. Pengelly, "A comparison between class E power amplifiers employing LDMOS FETs and SiC MESFETs," IEEE Wireless and Microwave Tech Conf, April 2004.
  7. A. Grebennikov and N. O. Sokal, Switch mode RF Power Amplifiers, Newnes, June 2007.
  8. J. Kim, B. Kim and Y. Y. Woo, "Advanced design of linear doherty amplifier for high efficiency using saturation amplifier," in Proc. IEEE MTT-S Int. Microw. Symp. Dig., pp. 1573- 1576, June 2007.
  9. J. Kim, J. Moon, Y. Y. Woo, S. Hong, I. Kim, J. Kim and B. Kim, "Analysis of a fully matched saturated doherty amplifier with excellent Efficiency," IEEE Trans. Microwave Theory Tech., vol. 56, no. 2, pp. 328-338, Feb. 2008. https://doi.org/10.1109/TMTT.2007.914361
  10. Y. S. Lee, M. W. Lee and Y. H. Jeong, "High efficient doherty amplifier based on Class-E Topology for WCDMA applications," IEEE Microwave and Wireless Components Letters, vol. 18, no. 9, pp. 608-610, Sept. 2008. https://doi.org/10.1109/LMWC.2008.2002460