• Electrical & Electronic Materials
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• v.9 no.5
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• pp.490-497
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• 1996

RF마그네트론 스파터링에 의한 $sSnO_2$ 박막을 증착한 결과 작동조건에 따라 표면에서 막손상이 발생하였는데, 이는 target에서 생성된 높은 에너지의 고속입자가 기판에서 직접 충돌로 일어나며, 마그네트론의 자계분포와도 관계된다. 또한 기판의 위치에 따라 박막의 전기적, 구조적 특성이 급격히 변하는데 본 논문은 중심자석의 세기와 RF power, 가스압력, 그리고 기판온도 등의 스파터링 작동조건을 변화시키면서 박막의 비손상을 검토하였고, 물성특성을 평가하였다. 실험결과로 부터 기판의 외축부에서 제작된 박막은 전반적으로 막손상이 없었고, 특히 target의 중심자석을 Cobalt로 설치하고 15 mTorr의 가스압력과 50 W의 RF power로 한 경우 가장 우수한 특성을 가진 박막을 얻을 수 있었다. 추가로 막손상을 방지하고자, 환원형의 masking glass를 target위에 설치하였는데, 고에너지 입자의 직접 충돌을 확실히 차단할 수 있었으며, 비저항율도 target의 부식부위 (erosion)에 대응하는 부분에서 100배 정도로 개선하였다.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.643-650
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• 1994

Highly [100]-oriented MgO thin films were deposited on Si(100) single crystal substrates by reactive RF magnetron sputtering. The effects of substrate temperature, gas pressure, RF input powder, and gas composition on the characteristics of MgO thin films were studied. The higher substrate temperature and the lower operating pressure were, the better crystallinity of the deposited MgO thin films were. The influences of the RF input power and oxygen to argon ratio were very complex. The physical characteristics of the films changed dramatically with deposition conditions. Highly smooth and epitaxial MgO films were obtained at the deposition conditions as follows; subatrate temperature, $600^{\circ}C$; operating pressure, 10 mtorr; RF input power density, 2 W/$\textrm{cm}^2$; the percentage of oxygen, 10%.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.184.1-184.1
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• 2015

RF magnetron sputtering법을 이용하여 IGZO박막을 RF power 100W로 일정하게 유지시켜, 열처리 변화에 따른 구조적, 전기적, 광학적 특성 분석을 연구하였다. IGZO 타겟은 $In_2$ $O_3$, $Ga_2$ $O_3$, ZnO 분말을 각각 1:1:2 mol% 조성비로 혼합하여 소결한 타겟을 사용하였고, $20mm{\times}20mm$ XG glass 기판위에 IGZO박막을 증착하였다. sputtering의 조건은 base pressure $2.0{\times}$10^-6Torr, working pressure $2.0{\times}$10^-2Torr, RF power 100 W, 증착온도는 실온으로 고정, 증착된 박막은 Annealing장비로 $500^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$로 열처리를 하였다. XRD 분석 결과 열처리 $700^{\circ}C$부터 2theta=31.4도에서 peak intensity가 증가하며 결정화가 진행되는 것을 확인하였다. AFM분석 결과 열처리 $700^{\circ}C$에서 최소 0.31 Roughness를 갖는 것을 확인하였고, Hall 측정 결과 열처리 $700^{\circ}C$에서 carrier concentration $4.91{\times}$10^19cm^-3, Mobility 14.4cm^2/V-s, Resistivity $8.7{\times}$10^-5${\Omega}-cm$로 확인하였으며, UV-Visible-NIR을 이용하여 열처리 한 모든 IGZO박막은 가시광선 영역에서 평균 85%이상의 광 투과성을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.886-890
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• 2010

The polytetrafluoroethylene (PTFE) films are deposited on glass using conventional rf-magnetron sputtering method. Their hydrophobic properties are investigated for application as an anti-fouling coating layer on the screen of displays. It is found that the hydrophobicity of PTFE films largely depends on the sputtering conditions, such as Ar gas flow and deposition time during sputtering process. These conditions are closely related to the deposition rate or thickness of PTFE film. Thus, it is also found that the deposition rate or the film thickness affects sensitively the geometrical morphology formed on surface of the rf-spluttered PTFE films. In particular, the PTFE film with 1950 nm thickness deposited for 30 minute at rf-power 50 W shows a very excellent optical transmittance of over 90% and a good anti-fouling property and a good durability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.164-168
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• 2005

Piezoelectric ZnO thin films were for the first time formed on SiO$_2$/Si(100) substrate using 2-step deposition, atomic layer deposition(ALD) and RF magnetron sputtering deposition, for film bulk acoustic resonator(FBAR) applications. The ZnO buffer layer by ALD was deposited using alternating diethyl zinc(DEZn)/$H_2O$ exposures and ultrahigh purity argon gas for purging. The ZnO films by 2-step deposition revealed stronger c-axis-preferred orientation and smoother surface than those by the conventional RF sputtering method. The solidly mounted resonator(SMR)-typed FBAR fabricated by using 2-step deposition method revealed higher quality factor of 580 and lower return loss of -17.35dB. Therefore the 2-step deposition method in this study could be applied to the FBAR device fabrication.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.83-86
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• 2010

The transparent electrode properties of ITO films deposited by RF magnetron sputtering with process pressure were investigated. The ITO thin films was deposited on a glass substrate using a target with 3in diameter sintered at a ratio of $In_2O_3$ : $SnO_2$ (9 : 1). 200-nm-thick ITO thin films were manufactured by various process pressures ($2.0{\times}10^{-2}$, $7.0{\times}10^{-3}$ and $2.0{\times}10^{-3}$ Torr). The optical transmittance and resistivity of the deposited ITO thin films showed a relatively satisfactory result under $10^{-2}$ Torr. For high process pressure, the optical transmittance was below 80%, while for low process pressure, the optical transmittance was above 85%. As a result of of mobility, resistivity and carrier concentration by Hall measurement, we obtained satisfactory properties to apply into a transparent conducting thin film.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.84-89
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• 2019

We fabricated durable anti-reflective(AR) layer with silica globular coating on polymer by two steps. Firstly, nano-protrusions of polymer were formed by plasma etching known as R.I.E(reactive ion etching) process. Secondly, silica globular coating was deposited on polymer nano-protrusions for mechanically protective and optically enhancing AR layers by RF magnetron sputter. And then durable antireflective polymers were synthesized adjusting plasma power and time, working pressures of RIE and RF sputtering processes. Consequently, we acquired the average transmission (94.10%) in the visible spectral range 400-800 nm and the durability of AR layer was verified to sustain its transmission until 5,000 numbers by rubber test at a load of 500 gf.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.139-146
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• 1996

Transparent and conducting Sb-doped $SnO_2$ thin films were prepared by rf magnetron sputtering technology. But it showed a serious damage phenomenon on the surface of as-deposited films. In order to avoid a damage caused in the substrate center and location facing to target erosion, a ring plate of masking glass was installed at 1.5 cm above target surface. The uniformity and electrical characteristic of $SnO_2$ thin films were evaluated by the control of optimal conditions in the magnetron sputtering operation such as rf power, sputtering gas pressure, and substrate temperature. In the experimental results using the operating conditions, the optimum temperature, which produced uniform and damageless films, shifted with the change of gas pressure. The rate was about $100^{\circ}C$/5 mTorr at rf power of 50 W Similarly, the optimum temperature in compensation for an increase of rf power shifted down to a proper rate.