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http://dx.doi.org/10.4313/JKEM.2005.18.2.164

Characteristics of ZnO Thin Films of FBAR using ALD and RF Magnetron Sputtering  

Shin, Young-Hwa (경원대학교 전기전자공학부)
Kwon, Sang-Jik (경원대학교 전기전자공학부)
Yoon, Young-Soo (건국대학교 신기술융합학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.2, 2005 , pp. 164-168 More about this Journal
Abstract
Piezoelectric ZnO thin films were for the first time formed on SiO$_2$/Si(100) substrate using 2-step deposition, atomic layer deposition(ALD) and RF magnetron sputtering deposition, for film bulk acoustic resonator(FBAR) applications. The ZnO buffer layer by ALD was deposited using alternating diethyl zinc(DEZn)/$H_2O$ exposures and ultrahigh purity argon gas for purging. The ZnO films by 2-step deposition revealed stronger c-axis-preferred orientation and smoother surface than those by the conventional RF sputtering method. The solidly mounted resonator(SMR)-typed FBAR fabricated by using 2-step deposition method revealed higher quality factor of 580 and lower return loss of -17.35dB. Therefore the 2-step deposition method in this study could be applied to the FBAR device fabrication.
Keywords
ZnO; 2-step deposition; Film bulk acoustic resonator(FBAR); Atomic layer deposition(ALD); RF magnetron sputtering;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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