• Annual Conference of KIPS
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• 2013.05a
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• pp.21-23
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• 2013

Static Random Access Memory (SRAM) using CMOS technology has many advantages. It does not need to refresh every certain time, as a result, the speed of SRAM is faster than Dynamic Random Access Memory (DRAM). This is the reason why SRAM is widely used in almost processors and system on chips (SoC) which require high processing speed. Two basic operations of SRAM are read and write. We consider two basic factors, including the accuracy of read and write operations and the speed of these operations. In our paper, we propose the read and write assist circuits for SRAM. By adding a power control circuit in SRAM, the write operation performed successfully with low error ratio. Moreover, the value in memory cells can be read correctly using the proposed pre-charge method.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.10
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• pp.2209-2216
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• 2011

In this paper, we design a 32-bit eFuse OTP memory for PMICs using MagnaChip's $0.18{\mu}m$ process. We solve a problem of an electrical shortage between an eFuse link and the VSS of a p-substrate in programming by placing an n-well under the eFuse link. Also, we propose a WL driver circuit which activates the RWL (read word-line) or WWL (write word-line) of a dual-port eFuse OTP memory cell selectively when a decoded WERP (WL enable for read or program) signal is inputted to the eFuse OTP memory directly. Furthermore, we reduce the layout area of the control circuit by removing a delay chain in the BL precharging circuit. We'can obtain an yield of 100% at a program voltage of 5.5V on 94 manufactured sample dies when measured with memory tester equipment.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.419-421
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• 1996

We propose the digitized pressure sensor and the interface circuit to read directly the pressure signal in the digital form. The interface circuit has the control clock, comparator, and bit value decision circuit. The digitized sensor and interface circuit are integrated on the one chip using the post processing after IC fabrication. The dimension of the fabricated digitized pressure sensor is $3{\times}6{\times}1mm^3$.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.102-106
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• 1999

We have designed and fabricated a four-bit shift register circuit using YBCO bicrystal junctions and experimentally tested its operations by a computer-controlled digital measurement set-up. Laser ablated YBCO thin films with clean surface were used in this work. The circuit consists of the shift register and two read SQUIDs placed next to each sides of the shift register. The SQUIDs were inductively coupled to the nearby shift register stages. A probe equipped with high speed coax lines were used in this experiment. The major obstacle in testing the circuit was the interference between the read SQUIDs and we solved the problem by finding the correct operation points of the SQUIDs from the simultaneously measured modulation curves. Loaded Data("1" or "0") were successfully shifted from a stage to the next one by a controlled current pulse injected to the bias lines located between the stages and the data shifts were correctly monitored by the read SQUIDs

• Nanomaterials
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• v.12 no.22
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• pp.4096-4107
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• 2022

In this work, a hybrid-phase transition field-effects-transistor (hyper-FET) integrated with phase-transition materials (PTM) and a multi-nanosheet FET (mNS-FET) at the 3 nm technology node were analyzed at the device and circuit level. Through this, a benchmark was performed for presenting device design guidelines and for using ultra-low-power applications. We present an optimization flow considering hyper-FET characteristics at the device and circuit level, and analyze hyper-FET performance according to the phase transition time (TT) and baseline-FET off-leakage current (I_OFF) variations of the PTM. As a result of inverter ring oscillator (INV RO) circuit analysis, the optimized hyper-FET increases speed by +8.74% and reduces power consumption by -16.55%, with IOFF = 5 nA of baseline-FET and PTM TT = 50 ps compared to the conventional mNS-FET in the ultra-low-power region. As a result of SRAM circuit analysis, the read static noise margin is improved by 43.9%, and static power is reduced by 58.6% in the near-threshold voltage region when the PTM is connected to the pull-down transistor source terminal of 6T SRAM for high density. This is achieved at 41% read current penalty.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.173-179
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• 2002

We propose a novel sensing circuit for 2T-2MTJ MRAM that can be used for high speed synchronous operation. Proposed bit-line sense amplifier detects small voltage difference in bit-lines and develops it into rail-to-rail swing while maintaining small voltage difference on TMR cells. It is small enough to fit into each column that the whole data array on selected word line are activated as in DRAMs for high-speed read-out by changing column addresses only. We designed a 256Kb read-only MRAM in a $0.35\mu\textrm{m}$ logic technology to verify the new sensing scheme. Simulation result shows a 25ns RAS access time and a cycle time shorter than 10 ns.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.3
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• pp.11-17
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• 1978

A medium scale integrated circuit, BCD to seven segment decoder/driver is designed and fabricated by employing P-channel metal-oxide-semiconductor technology. The device configuration is specifically designed for a common cathode seven segment LED display unit. The decoder logic is composed of two serially connected read-only-memory matrices and the LED drivers are implemented with wide channel FET's. The fabricated integrated circuit performed successfully with a supply voltage between -7 Volt and -26 Volt and the non-uniformity of the LED segment current is about 10%.

• Proceedings of the IEEK Conference
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• 2000.06e
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• pp.199-202
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• 2000

RFID (Radio Frequency Identification) is a technique which is used for identifying different types of objects and tracking people and animals. Passive RFID consists of reader, a passive tag. The reader transmit energy to a tag and read information back from tag. The tag is energized by a carrier frequency which is transmitted by the reader and transmit information back to the reader. In this paper, the circuit for read and write RFID system is presented. The presented RFID system adopts 125kHz carrier frequency, backscattering and PSK for communication method.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1991.10a
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• pp.137-140
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• 1991

The TDX-10 Time Switch architecture has modularity, high reliability and considerable large switch fabric having separated and both-way 1K time slot interchange switching circuit elements. In this paper, we present key functions, architecture, features and traffic characteristic of TDX-10 Time Switch. And we also describe some basic implementation technologies such as Frame Base Read-Write Separation Method, Multi-Write Method and Read-Write Separation Technique with Dual-port Memory.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.76-78
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• 2003

We have designed and tested an RSFQ (Rapid Single Flux Quantum) NDRO (Non Destructive Read Out) circuit for the development of a high speed superconducting ALU (Arithmetic Logic Unit). When designing the NDRO circuit, we used Julia, XIC and Lmeter for the circuit simulations and layouts. We obtained the simulation margins of larger than $\pm$25％. For the tests of NDRO operations, we attached the three DC/SFQ circuits and two SFQ/DC circuits to the NDRO circuit. In tests, we used an input frequency of 1 KHz to generate SFQ Pulses from DC/SFQ circuit. We measured the operation bias margin of NDRO to be $\pm$15％. The circuit was measured at the liquid helium temperature.