• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.130.1-130.1
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• 2007

• 한국세라믹학회지
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• 제40권12호
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• pp.1189-1196
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• 2003

Sol-gel법으로 강유전성 B $i_{3.25}$L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) stock solution을 합성하고 Pt/Ti $O_2$/ $SiO_2$/Si 기판위에 스핀코팅법으로 BLT 박막을 증착하였다. 본 실험에서는 Bi(TMHD)$_3$, La(III)2-Methoxyethoxide, Ti(IV)i-propoxide를 출발물질로 사용하였으며 2-Methoxyethanol을 용매로 사용하였다. 급속열처리(RTA)가 BLT 박막의 결정성장을 촉진시키기 위해 사용되었고, RTA를 실시한 시편과 RTA를 실시하지 않은 시편의 전기적 특성을 비교하였다. RTA를 실시한 후 72$0^{\circ}C$에서 로 열처리 한 BLT 박막의 경우 5V 인가 전압 하에서 2Pr 값은 RTA를 실시하지 않은 경우보다 27% 증가한 20.46$\mu$C/$ extrm{cm}^2$이었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.453-455
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• 2004

The effect of rapid thermal annealing (RTA) treatment on the growth characteristics of CNTs was investigated. We observed that Ni catalyst film was agglomerated by RTA treatment, resulting in the formation of Ni nanoparticles. The well aligned CNTs were grown from the Ni nanoparticles by plasma enhanced chemical vapor deposition (PECVD). It is shown that the size and distribution of the nanoparticles depend mainly on the annealing temperature and initial thickness of the metal layer. Also, it was found that CNTs grown through optimal RTA treatment had the more improved field emission characteristics than those of as-grown CNTs.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.58.1-58.1
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• 2010

We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1370-1375
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• 2004

This article investigates the heat transfer characteristics in a RTA system for LCD manufacturing and suggests a way to evaluate the quality of a poly-Si film from the thin film optics analysis. The transient and one-dimensional conductive/radiative heat transfer equation considering wave interference effect is solved to predict surface temperatures of thin films. In dealing with radiative heat transfer, a one-dimensional two-flux method is used and the ray tracing method is also utilized to account for the wave interference effects. It is assumed that each interface is assumed diffusive but the spectral radiative properties are included. It is found that the selective heating region exists for various wavelengths and consequently may contribute to heat the poly-Si film. Using the formalism of the characteristic transmission matrix, the lumped structure reflectance, transmittance, and absorptance are calculated and they are compared with experimental data of the poly-Si film during the SPC process via the FE-RTA (Field-Enhanced RTA) technology.

• 대한전자공학회논문지TE
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• 제39권1호
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• pp.31-36
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• 2002

낮은 에너지의 보론 이온을 선비정질화된 실리콘 기판과 단결정 기판에 이온 주입하여 0.2μm 정도의 접합 깊이를 갖는 박막의 P/sup +/-n 접합을 형성하였다 이온주입에 의한 결정결함의 제거 및 주입된 보론 이온의 활성화를 위해 급속 열처리기를 이용하였으며, BPSC(bore-phosphosilicate glass)를 흐르도록 하기 위해 노 열처리를 도입하였다. 선비정질화 이온주입은 45keV, 3×10/sup 14/cm/sup -2/ Ge 이온을 사용하였으며, p형 불순물로는 BF2 이온을 20keV, 2×10/sup 15/cm /sup -2/로 이온주입 하였다. 급속 열처리와 노 열처리 조건은 각각 1000。C/ 10초와 850。C/4O분이었다. 형성된 접합의 접합깊이는 SIMS와 ASR로 측정하였으며, 4-point probe로 면 저항을 측정하였다. 또한 전기적인 특성은 다이오드에 역방향 전압을 인가하여 측정된 누설전류로 분석하였다. 측정 결과를 살펴보면, 급속 열처리만을 수행하여도 양호한 접합 특성을 나타내나, 급속 열처리와 노 열처리를 함께 고려해야 할 경우에는 노 열처리 후에 급속 열처리를 수행하는 공정이 급속 열처리 후에 노 열처리를 수행하는 경우보다 더 우수한 박막 접합 특성을 나타내었다.

• 한국세라믹학회지
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• 제35권1호
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• pp.88-96
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• 1998

The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

• 한국재료학회지
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• 제18권10호
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1333-1336
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• 1998

Hydrogenated amorphous silicon(a-Si:H) films which were deposited by plasma enhanced chemical deposition(PECVD) have been recrystallized by the two-step rapid thermal annealing(RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallzation step. In result, the recrystallized polycrystalline silicon(poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on the silicon wafers. The maximun ON/OFF current ratio of the device was over $10^5$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.711-714
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• 2003

In this presentation, we investigated the abnormal subthreshold slope of the FD SOI MOSFETs upon the rapid thermal annealing. Based on subthreshold technique and C-V measurement, we deduced that the hump of the subthreshold slope comes from the abnormal D$_{it}$ distribution after RTA. The local kink in the interface trap density distribution by RTA drastically degrades the subthreshold characteristics and mini hump can be eliminated by S-PGA.A.