A Study on Electrical Properties of Sol-gel Derived Bi3.25La0.75Ti3O12 Thin Films by Rapid Thermal Annealing |
이인재
(고려대학교 재료공학과)
김병호 (고려대학교 재료공학과) |
1 |
Ferroelectric Memories
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DOI ScienceOn |
2 |
Effect of Laser Fluence on Local Leakage Current of Ferroelectric BLT Thin Film
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3 |
New Low Temperature Processing of Sol-gel <TEX>$SrBi_2Ta_2O_9$</TEX> Thin Films
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DOI ScienceOn |
4 |
Effect of the Introduction UV Irradiation Crystallization of <TEX>$Sr_{0.9}Bi_{2.1}Ta_2O_9$</TEX> Thin Films by Sol-gel Method
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과학기술학회마을 |
5 |
Ferroelectric Properties of <TEX>$Bi_{3.25}La_{0.75}Ti_3O_{12}$</TEX> Thin Films Prepares by MOD
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과학기술학회마을 |
6 |
Ferroelectric Properties of <TEX>$Bi_{3.25}La_{0.75}Ti_3O_{12}$</TEX> Thin Films Prepared by Chemical Solution Deposition
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DOI ScienceOn |
7 |
Lanthanum-substituted Bismuth Titanate for Use in Non-volatile Memories
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DOI |
8 |
Low Temperature Sintering Process of Sol-gel Derived Ferroelectric <TEX>$Sr_{0.9}Bi_{2.1}Ta_{1.8}Nb_{0.2}O_9$</TEX> Thin Films
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DOI ScienceOn |
9 |
Development of a New Annealing Process to allow New Top Electrode Materials for <TEX>$SrBi_2Ta_2O_9$</TEX> Thin Films
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DOI ScienceOn |