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(A Study on the Annealing Methods for the Formation of Shallow Junctions)  

한명석 (대천대학 컴퓨터전자전기학부)
김재영 (한국항공대학교 전자,정보통신컴퓨터공학부)
이충근 (한국항공대학교 전자,정보통신컴퓨터공학부)
홍신남 (한국항공대학교 전자,정보통신컴퓨터공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TE / v.39, no.1, 2002 , pp. 31-36 More about this Journal
Abstract
Low energy boron ions were implanted into the preamorphized and crystalline silicon substrates to form 0.2${\mu}m$ $p^+-n$ junctions. The rapid thermal annealing(RTA) was used to annihilate the crystal defects due to implantation and to activate the implanted boron ions, and the furnace annealing was employed to reflow the BPSG(bolo-phosphosilicate glass). The implantation conditions for Gepreamorphization were the energy of 45keV and the dose of 3$\times$1014cm-2. BF2 ions employed as a p-type dopant were implanted with the energy of 20keV and the dose of 2$\times$1015cm-2. The thermal conditions of RTA and furnace annealing were $1000^{\circ}C$/10sec and $850^{\circ}C$/40min, respectively. The junction depths were measured by SIMS and ASR techniques, and the 4-point probe was used to measure the sheet resistances. The electrical characteristics were analyzed via the leakage currents of the fabricated diodes. The single thermal processing with RTA produced shallow junctions of good qualities, and the thermal treatment sequence of furnace anneal and RTA yielded better junction characteristics than that of RTA and furnace anneal.
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