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(A Study on the Annealing Methods for the Formation of Shallow Junctions)  

한명석 (대천대학 컴퓨터전자전기학부)
김재영 (한국항공대학교 전자,정보통신컴퓨터공학부)
이충근 (한국항공대학교 전자,정보통신컴퓨터공학부)
홍신남 (한국항공대학교 전자,정보통신컴퓨터공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TE / v.39, no.1, 2002 , pp. 31-36 More about this Journal
Abstract
Low energy boron ions were implanted into the preamorphized and crystalline silicon substrates to form 0.2${\mu}m$ $p^+-n$ junctions. The rapid thermal annealing(RTA) was used to annihilate the crystal defects due to implantation and to activate the implanted boron ions, and the furnace annealing was employed to reflow the BPSG(bolo-phosphosilicate glass). The implantation conditions for Gepreamorphization were the energy of 45keV and the dose of 3$\times$1014cm-2. BF2 ions employed as a p-type dopant were implanted with the energy of 20keV and the dose of 2$\times$1015cm-2. The thermal conditions of RTA and furnace annealing were $1000^{\circ}C$/10sec and $850^{\circ}C$/40min, respectively. The junction depths were measured by SIMS and ASR techniques, and the 4-point probe was used to measure the sheet resistances. The electrical characteristics were analyzed via the leakage currents of the fabricated diodes. The single thermal processing with RTA produced shallow junctions of good qualities, and the thermal treatment sequence of furnace anneal and RTA yielded better junction characteristics than that of RTA and furnace anneal.
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1 W. Zagozdzon-Wosik, P. B. Grabiec and G. Lux, 'Fabrication of Submicron Junctions-Proximity Rapid Thermal Diffusion of Phosphorus, Boron and rsenic', IEEE Transactions on Electron Devices., vol.41, no.12, pp. 2281-2290, Dec. 1994
2 Jong-Wan Jung, Young-Jong Lee, Jeong-Mo Hwang, Kyung-Ho Lee, 'The effect of ILD material and BPSG densification anneal on the device characteristics', '99 ICVC 6th International Conference VLSI and CAD, pp. 473-475, 1999
3 한명석, 홍신남, 김형준, '선비정질화를 이용한 shallow $p^+-n$ 접합 형성에 관한 연구,' 전자공학회논문집 제28권 A편 제9호, pp. 68-74, 1991
4 R. B. Fair and R. Subrahmanyan, 'PREDIC -A new design tool for shallow junction processes,' Proc. SPIE, vol. 530, pp. 88-96, 1985
5 Daniel F. Downey, Kevin S. Jones, 'The Role of Extended Defects on the Formation of Ultrashallow junctions in Ion Implanted $^{11}B^+$, $^{49}BF_2$, $^{75}As^+$ and $^{31}P^+$', Ion Implantation Technology Proceedings, 1998 International Conference, vol. 2, pp. 987-901, 1998
6 Shin-Nam Hong, '0.2${\mu}m$$p^+-n$ Junction Characteristics Dependent on Implantation and annealing Process', IEEE Electron Device. lett., vol. 20, no. 2, pp. 83-85, Feb. 1999
7 B. Baccus, E, Vandenbossche, and M. Lannoo, 'Modeling high concentration boron diffusion under amorphization conditions,' J. Appl. Phys., vol. 77, pp. 5630-5641, 1995
8 C.P.Wu, J.T. McGinn and L.R. Hewitt, 'Silicon Preamorphization and Shallow Junction Formation for ULSI Circuits,' J. Electronic Mat., vol. 18, no. 6, pp. 721-730, 1989
9 Kil-Ho Lee, Jae-Geun Oh, Byung-Jin Cho, Jong-Choul Kim, 'Effect of additional low temperature RTA on ultra-shallow $p^+$-n junction formation', Ion Implantation Technology. Proceedings of the 11th International Conference, pp. 634-637, 1997