Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2010.05a
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- Pages.58.1-58.1
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- 2010
Fabrication of polycrystalline Si films by rapid thermal annealing of amorphous Si film using a poly-Si seed layer grown by vapor-induced crystallization
- Yang, Yong-Ho (KAIST) ;
- An, Gyeong-Min (KAIST) ;
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Gang, Seung-Mo
(KAIST) ;
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An, Byeong-Tae
(KAIST)
- Published : 2010.05.13
Abstract
We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at