• Title/Summary/Keyword: pumping-current

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Analysis on the Magnetic Field Distribution of Low-Tc Superconducting Power Supply Using Finite Element Method (유한요소법을 이용한 저온초전도전원장치의 자기장분포 해석)

  • Bae, Duck-Kweon;Yoon, Yong-Soo;Kim, Ho-Min;Ahn, Min-Cheol;Kim, Yeong-Sik;Han, Tae-Su;Ko, Tae-Kuk
    • Proceedings of the KIEE Conference
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    • 2001.07b
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    • pp.739-741
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    • 2001
  • Magnetic field distribution of rotating flux type Low-Tc superconducting (LTS) power supply with respect to the applied current on exciters is investigated in detail by using Finite Element Method (FEM). LTS power supply consists of two exciters, a rotor, a stator and superconductor foil attached to the inner surface of the stator and LTS load. The current pumping of LTS power supply is induced by partial-quenching and recovery of superconductor foil. For this reason, magnetic flux density on superconductor foil must be sufficiently greater than the its critical magnetic density. In this analysis, the normal spot on superconductor foil appears more than 10A of excitation current. The results of this analysis are calculated and compared with the experimental results.

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Experiment of Flux pump for High Temperature Superconductor Insert coils of NMR magnets (NMR 자석용 고온 초전도 내부 코일을 위한 플럭스 폄프에 대한 실험)

  • 정상권
    • Progress in Superconductivity and Cryogenics
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    • v.3 no.2
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    • pp.15-20
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    • 2001
  • This paper describes a model flux pump experiment recently performed at the MIT Francis Bitter Magnet Laboratory. The results of the model flux pump will be used in the development of a prototype flux pump that will be couple to a high-temperature superconductor (HTS) insert coil of a high-field NMR (Nuclear Magnetic Resonance) magnet, Such an HTS insert is unlikely to operate in persistent model because of the conductors low index(n) The flux pump can compensate fro field decay in the HTS insert coil and make the insert operate effectively in persistent mode . The flux pump, comprised essentially of a transformer an two switches. all made of superconductor, transfers into the insert coil a fraction of a magnetic energy that is first introduced in the secondary circuit of the transformer by a current supplied to the primary circuit. A model flux pump has been designed. fabricated, and operated to demonstrate that a flux pump can indeed supply a small metered current into a load superconducting magnet. A current increment in the range of microamperes has been measured in the magnet after each pumping action. The superconducting model flux pump is made of Nb$_3$ Sn tape, The pump is placed in a gaseous environment above the liquid helium level to keep its heat dissipation from directly discharged in the liquid: the effluent helium vapor maintains the thermal stability of the flux pump.

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Analysis Trap and Device Characteristic of Silicon-Al2O3-Nitride-Oxide-Silicon Memory Cell Transistors using Charge Pumping Method (Charge Pumping Method를 이용한 Silicon-Al2O3-Nitride-Oxide-Silicon Flash Memory Cell Transistor의 트랩과 소자)

  • Park, Sung-Soo;Choi, Won-Ho;Han, In-Shik;Na, Min-Gi;Lee, Ga-Won
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.7
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    • pp.37-43
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    • 2008
  • In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.

Effect of municipal sludge from drainage facility on foul smell (도시내 배수설비 슬러지가 악취에 미치는 영향 연구)

  • Yu, Dae-Hyun;Park, Jihoon;Lee, Yong-Hoon;Lee, Jang-Hown;Kang, Seon-Hong
    • Journal of Korean Society of Water and Wastewater
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    • v.28 no.3
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    • pp.315-324
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    • 2014
  • The residents' odor complaint is steadily increasing by odor causing from sewage system. A current drainage facilities and septic tank are included in the individual sewerage according to Sewerage Act. However, definitions and legal standards of drainage tank are insufficient. In addition, specifications and maintenance standards related to structure and size are not established. In this research, effect of drainage tank in individual sewage facilities on the odor occurrence was studied and the concentrations of $H_2S$ and composite odor were measured. From the measurements, the concentration of $H_2S$ and composite odor were 1 ppm ~ 5 ppm and 1.04 OU ~ 4.05 OU, respectively, before pump operation. Also, the concentration of $H_2S$ and composite odor were 5 ppm ~ 33 ppm and 5.10 OU ~ 35.04 OU, respectively, after pump operation. The concentration of SS in the effluent from drainage tank was ranged from 840 mg/L to 1,980 mg/L. These high concentration of SS seemed to be the major source of foul smell when high concentrated suspended solids in the public sewerage system were decomposed and then emitted. In this research, correlation coefficient ($R^2$) between $H_2S$ and composite odor before and after pumping were 0.925 and 0.918, respectively.

Complementary Dual-Path Charge Pump with High Pumping Efficiency in Standard CMOS Logic Technology (상보형 전하이동 경로를 갖는 표준 CMOS 로직 공정용 고효율 전하펌프 회로)

  • Lee, Jung-Chan;Chung, Yeon-Bae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.12
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    • pp.80-86
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    • 2009
  • In this paper, we present a new charge pump circuit feasible for the implementation with standard twin-well CMOS process technology. The proposed charge pump employs PMOS-switching dual charge-transfer paths and a simple two-phase clock. Since charge transfer switches are fully turned on during each half of clock cycle, they transfer charges completely from the present stage to the next stage without suffering threshold voltage drop. During one clock cycle, the pump transfers charges twice through two pumping paths which are operating alternately. The performance comparison by simulations and measurements demonstrates that the proposed charge pump exhibits the higher output voltage, the larger output current and a better power efficiency over the traditional twin-well charge pumps.

Cooperation Measures for Agricultural Infrastructure Development in North Korea (북한 농업생산기반조성 현황과 협력 방안)

  • Choe Jin Wook
    • Proceedings of the Korean Society of Crop Science Conference
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    • 1998.10a
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    • pp.134-158
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    • 1998
  • The objectives of this article are to identify the current status of agricultural infrastructure in North Korea and to suggest some cooperation measures among South and North Koreas and international agencies in order to develop the North Korea's agricultural infrastructure. The area of cultivated land in North Korea is 1,992 thousand ha (paddy field: 585 thousand ha: upland: 1,407 thousand ha) in 1997. Major water use facilities in North Korea are 1,900 reservoirs (included 100 big dams), 36,400 irrigation pumping stations, 1,600 drainage pumping stations, and 14'a,000 wells. In addition, there is 'two thousand Ri canal construction project' linking the rivers of Aprok, Daeryong, Daedong, Jaeryong, and Yesong. The unit of paddy land consolidation is about 1 ha which is regarded as rational for agricultural mechanization. The project of 'Darak' upland construction to create small size farmland, which has been carried out since 1976 has been unsuccessful due to the shortage of construction equipment. The area of farmland created by reclamation by 1995 is only 75 thousand ha although the potential project area is at)out 320 thousand ha along the western coast. It is due to the fact that civil engineering technologies and equipments are old and investment funds are insufficient. These are a few suggested areas of cooperation among South and North Korea and international agencies in order to improve North Korea's agricultural infrastructure : i) see land reclamation and land consolidation projects to increase paddy fields for rice production; ii) rehabilitation project in farm land areas devastated by flood; and iii) agricultural water development project which including diagnosing and rehabilitating irrigation and drainage facilities.

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A Study on the Characteristics of Si-$SiO_2$ interface in Short channel SONOSFET Nonvolatile Memories (Short channel SONOSFET 비휘발성 기억소자의 Si-$SiO_2$ 계면특성에 관한 연구)

  • Kim, Hwa-Mok;Yi, Sang-Bae;Seo, Kwang-Yell;Kang, Chang-Su
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1268-1270
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    • 1993
  • In this study, the characteristics of Si-$SiO_2$ interface and its degradation in short channel SONOSFET nonvolatile memory devices, fabricated by 1Mbit CMOS process($1.2{\mu}m$ design rule), with $65{\AA}$ blocking oxide layer, $205{\AA}$ nitride layer, and $30{\AA}$ tunneling oxide layer on the silicon wafer were investigated using the charge pumping method. For investigating the Si-$SiO_2$ interface characteristics before and after write/erase cycling, charge pumping current characteristics with frequencies, write/erase cycles, as a parameters, were measured. As a result, average Si-$SiO_2$ interface trap density and mean value of capture cross section were determined to be $1.203{\times}10^{11}cm^{-2}eV^{-1}\;and\;2.091{\times}10^{16}cm^2$ before write/erase cycling, respectively. After cycling, when the write/erase cycles are $10^4$, average $Si-SiO_2$ interface trap density was $1.901{\times}10^{11}cm^{-2}eV^{-1}$. Incresing write/erase cycles beyond about $10^4$, Si-$SiO_2$ interface characteristics with write/erase cycles was increased logarithmically.

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Tunable $CO_2$ Laser for FIR Laser Pumping (원적외선 레이저 펌핑용 가변파장 $CO_2$ 레이저)

  • 진윤식;정기형;이헌주
    • Korean Journal of Optics and Photonics
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    • v.1 no.2
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    • pp.155-161
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    • 1990
  • A Continous wave tunable $CO_2$ laser which is the slow axial flow type was construccted for the optical pumping of methyl alcohol ($CH_3OH$) laser. The reflective grating of 100 grooveslmm and 10.6$\mu\textrm{m}$ blaze wavelength was used to select wavelength. We have investigated continous outpu: power characteristics, and then have compared tuned output power profile with the gain curve of $CO_2$ laser. The optimum condition for maxium power was found at the gas mixing ratio 1 : 3 : 10 for $CO_2: N_2$ and He. under this condition the flow rate, pressure of lasing gas and discharge current are 9.5 llmin. 14 torr, and 55 mA respectively. The maxium output power was 55 Wlm. Output power of single wavelength operation was measured on 60 individual rotation vibration transitions in the P and K branches of the 9.5$\mu\textrm{m}$ band and 10.4$\mu\textrm{m}$ band in $CO_2$. The output power profile obtained from each band is well consistent with the gain curve of $CO_2$ laser and maxium tuned output power was 20 watt.

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Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

  • Kim, Sung-Bock;Bae, Sung-Bum;Ko, Young-Ho;Kim, Dong Churl;Nam, Eun-Soo
    • Applied Science and Convergence Technology
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    • v.26 no.4
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    • pp.79-85
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    • 2017
  • The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

Urban Flood Simulation Considering Building and Sewer Lines (건물 및 우수 배제를 고려한 시가지 범람해석)

  • Kang, Sang-Hyeok
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.29 no.3B
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    • pp.213-219
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    • 2009
  • In densely urban areas, features such as the sewer system, buildings and river banks have an effect on flow dynamics and flood propagation, and will therefore be accounted for in the model set-up. While two-dimensional (2D) flood models of urban areas are at the forefront of current research into flood inundation mechanisms, they are however constrained by inadequate parameters of topography, and insufficient and inaccurate data. In this study, an urban flood model (overland flow, 2D urban flood flow and sewer flow) was combined and applied at Samcheok city which was damaged by inundation in 2002, in order to simulate inundation depth. The influence of buildings and pumping capacity was also analyzed to estimate the inundated depth in the study area. As a result, it was found that urban inundated depth are affected by pumping capacity directly and it increased about 20-30 cm on most of the modeled area with a building share rate of 0.2-0.6 per unit grid.