• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.661-665
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• 2022

The 3 MeV proton irradiation effects on SiGe low noise amplifier (LNA) (NXP BGU7005) performance under different voltage supply VCC (0 V, 2.5 V) conditions were firstly experimental studied in this present work. The S parameters including S₁₁, S₂₂, S₂₁, 1 dB compression point and noise figure (NF) of the test samples under different bias voltage supply were measured and compared before and after 3 MeV proton irradiation. The total proton irradiation fluence was 1 × 10¹⁵ protons/cm². The maximum degradation quantities of the gain S₂₁ and NF of the test samples under zero bias are measured respectively 1.6 dB and 1.2 dB. Compared with the samples under 2.5 V bias supply, the maximum degradation of S₂₁ and NF are respectively 1.1 dB and 0.8 dB in the whole frequency band. It is noteworthy that the gain and NF of SiGe LNAs under zero-bias mode suffer enhanced degradation compared with those under normal bias supply. The key influence factors are discussed based on the correlation of the SiGe device and the LNA circuit. Different process of the ionization damage and displacement damage under zero-bias and 2.5 V bias voltage supply contributed to the degradation difference. The underlying physical mechanisms are analyzed and investigated.

• Journal of Semiconductor Engineering
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• v.2 no.1
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• pp.119-124
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• 2021

Along with the needs for feasibility in the field of space applications, interests in radiation-hardened electronics is growing rapidly. Gallium nitride (GaN)-based devices have been widely researched so far owing to superb radiation resistance. Among them, research on the most abundant protons in low earth orbit (LEO) is essential. In this paper, proton irradiation effects on parameter changes, degradation mechanism, and correlation with reliability of GaN-based devices are summarized.

• Journal of IKEEE
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• v.22 no.2
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• pp.484-487
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• 2018

5 MeV proton-irradiation with total dose of $10^{15}/cm^2$ was performed on AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with various gate metals including Ni, TaN, W, and TiN to investigate the degradation characteristics. The positive shift of pinch-off voltage and the reduction of on-current were observed from irradiated HEMTs regardless of a type of gate materials. Hall and transmission line measurements revealed the reduction of carrier mobility and sheet charge concentration due to displacement damage by proton irradiation. The shift of pinch-off voltage was dependent on Schottky barrier heights of gate metals. Gate leakage and capacitance-voltage characteristics did not show any significant degradation demonstrating the superior radiation hardness of Schottky gate contacts on GaN.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.22-23
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. Characterization of the device was performed by I-V, breakdown voltage, threshold voltage, and turn-off delay time measurement. For irradiated device by 5.56 MeV energy, the breakdown voltage and the threshold voltage were 730 V and 6.5~6.6 V, respectively. The turn-off time has been reduced to 170 ns, which was original $6\;{\mu}s$ for the un-irradiated device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.216-221
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• 2006

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.

• Korean Journal of Plant Resources
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• v.18 no.3
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• pp.462-469
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• 2005

Effects of proton beam irradiation on seed germination and growth pattern of tobacco (Nicotiana tabacum L. cv. BY-4; N. plumbaginifolia) and rice (Oryasativa L.) plants were estimated to develop the efficient conditions of irradiation. Seed germination rate was decreased by increasing the proton beam the current and the beam irradiation time in both tobacco and rice seeds. The beam irradiation conditions showing $50\%$ germination were over 60 sec at 10 nA, approximately 5 sec at 100 nA and at 500 nA beam current in tobacco seeds. And the conditions of $50\%$ germination were 60 sec at 10 nA, and 100 nA and 30 sec at 500nA in rice (cv. Dongjin 1) seeds. The growth of irradiated plants was decreased, but significant difference in morphological changes was not observed by the proton beam treatment. The proton beam is able to use as a mutagen, but some of the factors including beam size and beam detector-system must be established for efficient usage of the beam.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1308-1313
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• 2004

Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1264-1270
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(～1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

• Journal of Magnetics
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• v.21 no.2
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• pp.183-186
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• 2016

In this study, we report on an investigation of proton radiation resistance of 410 martensitic stainless steels under 3 MeV proton with the doses ranging from $1.0{\times}10^{15}$ to $1.0{\times}10^{17}p/cm^2$ at the temperature 623 K. Vibrating sample magnetometer (VSM) and X-ray diffractometer (XRD) were used to study the variation of magnetic properties and structural damages by virtue of proton irradiation, respectively. VSM and XRD analysis revealed that the 410 martensitic stainless steels showed proton radiation resistance up to $10^{17}p/cm^2$. Proton energy degradation and flux attenuations in 410 stainless steels as a function of penetration depth were calculated by using Stopping and Range of Ions in Matter (SRIM) code. It suggested that the 410 stainless steels have the radiation resistance up to $5.2{\times}10^{-3}$ dpa which corresponds to neutron irradiation of $3.5{\times}10^{18}n/cm^2$. These results could be used to predict the maintenance period of SUS410 stainless steels in fission power plants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.446-446
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• 2008

The effects of proton beam irradiation on the yittria-stabilized zirconia (YSZ) pellets have been investigated using SEM, EDX and TGA. 130 keV proton beam was irradiated on YSZ with high doses and annealed at various temperatures. The ion conductivity was also measured as a function of proton irradiation temperature and annealing temperature and the results were compared with their corresponding SEM images and the results of SRIM calculations.