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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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5-MeV Proton-irradiation characteristics of AlGaN/GaN - on-Si HEMTs with various Schottky metal gates

  • Cho, Heehyeong (Dept. of Electronic and Electrical Engineering, Hongik University) ;
  • Kim, Hyungtak (Dept. of Electronic and Electrical Engineering, Hongik University)
  • Received : 2018.06.11
  • Accepted : 2018.06.29
  • Published : 2018.06.30
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Abstract

5 MeV proton-irradiation with total dose of $10^{15}/cm^2$ was performed on AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with various gate metals including Ni, TaN, W, and TiN to investigate the degradation characteristics. The positive shift of pinch-off voltage and the reduction of on-current were observed from irradiated HEMTs regardless of a type of gate materials. Hall and transmission line measurements revealed the reduction of carrier mobility and sheet charge concentration due to displacement damage by proton irradiation. The shift of pinch-off voltage was dependent on Schottky barrier heights of gate metals. Gate leakage and capacitance-voltage characteristics did not show any significant degradation demonstrating the superior radiation hardness of Schottky gate contacts on GaN.

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References

  1. U. K. Mishra, et al., "AlGaN/GaN HEMTs-an overview of device operation and applications," Proc. IEEE, vol. 90, no. 6, pp. 1022-1031, 2002. DOI: 10.1109/JPROC.2002.1021567
  2. Y. S. Puzyrev, et al., "Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors," IEEE Tran. Nucl. Sci., vol. 58, no. 6, pp. 2918-2924, 2011. DOI: 10.1109/TNS.2011.2170433
  3. W. S. Tan, et al., "High temperature performance of AlGaN/GaN HEMTs on Si substrates," Solid-State Electron., vol. 50, no. 3, pp. 511-513, 2006. DOI: 10.1016/j.sse.2006. 02.008
  4. G. Sonia, et al., "2 MeV ion irradiation effects on AlGaN/GaN HFET devices," Solid-State Electron., vol. 52, no. 7, pp. 1011-1017, 2008. DOI: 10.1016/j.sse.2008.02.005
  5. X. Hu, et al., "Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors," IEEE Tran. Nucl. Sci., vol. 50, no. 6, pp. 1791-1796, 2003. DOI: 10.1109/TNS. 2003.820792
  6. Dong-Min Keum, et al., "Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MIS Heterostructure FETs," IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 3362-3368, 2015. DOI: 10.1109/TNS.2015.2495209
  7. C.F. Lo, et al., "Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors," J. Vac. Sci. Technol. B, vol. 29, pp. 061201-1-061201-6, Sep., 2011. DOI: 10.1116/1.3644480