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http://dx.doi.org/10.4313/JKEM.2004.17.12.1308

Fabrication of Ultra Fast Recovery Diodes using Proton Irradiation Technique  

Lee, Kang-Hee (경북대학교 전자공학과)
Kim, Byoung-Gil (위덕대학교 정보통신공학부)
Lee, Yong-Hyun (경북대학교 전자공학과)
Baek, Jong-Mu (대원과학대학 전자정보통신과)
Lee, Jae-Sung (위덕대학교 정보통신공학부)
Bae, Young-Ho (위덕대학교 정보통신공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.12, 2004 , pp. 1308-1313 More about this Journal
Abstract
Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.
Keywords
Proton; Trr; Diode; Protection range;
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