1 |
P. Hazdra, K. Brand, J. Rubes, and J. Vobecky, 'Local lifetime control by light ion irradiation : impact on blocking capability of power P-i-N diode', Micro-electronics Journal, Vol. 32, Iss. 5-6, p. 449, 2001
|
2 |
김병길, 최성환, 이종헌, 배영호, '입자 조사에 의한 PT형 전력 다이오드의 스위칭 특성 향상', 한국전기전자재료학회 2005추계학술대회 논문집, 18권, p. 16, 2005
|
3 |
N. Keskitalo, A. Hallen, F. Masszi, and J. Olsson, 'Simulation of forward bias injection in proton irradiated silicon pn-junctions', Solid State Electronics, Vol. 39, No.7, p. 1087, 1996
DOI
ScienceOn
|
4 |
김상철, 김은동, '전력반도체 기술 및 시장동향', 전기전자재료학회지, 15권, 3호, p. 15, 2002
|
5 |
A. Guerra, K. Andoh, and S. Fimiani, 'Ultra-fast recovery diodes meet today's requirements for high frequency operation and power ratings in SMPS applications', International Rectifier, p. 1, 2000
|
6 |
P. Cova, R. Menozzi, M. Portesine, M. Bianconi, E. Gombia, and R. Mosca 'Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications', Solid State Electronics, Vol 49, Iss. 2, p. 183, 2005
DOI
ScienceOn
|
7 |
이강희, 김병길, 이용현, 백종무, 이재성, 배영호, '양성자 주입 기술을 이용한 초고속 회복 다이오드의 제작', 전기전자재료학회논문지, 17권, 12호, p. 1308, 2004
|
8 |
P. Hazdra, J. Vobecky, and K. brand, 'Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques', NIMB, Vol. 186, Iss. 1-4, p. 414, 2002
|
9 |
N. Mohan, T. M. Undeland, and W. P. Robbins, 'Power electronics', John Wiley & Sons Inc., p. 1, 2003
|
10 |
S. Godey, E. Ntsoenzok, D. C. Schmidt, and J. F. Barbot, 'Effect of shallow donors induced by hydrogen on p+n junctions', Materials Science and Engineering B, Vol. 58, Iss. 1-2, p, 108, 1999
DOI
ScienceOn
|