• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.1-5
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• 2001

This paper describes the electrical characteristics of Nomex paper employed as an insulating material of distribution transformers. The relative permittivities(dielectric constants) and $tan{\delta}$(dielectric dissipation factors) were measured as a dielectric characteristic and the partial discharge inception voltages(PDIVs) and breakdown voltages were also measured as an electrical strength characteristic of Nomex paper. As a result, the permittivity and $tan{\delta}$ of Nomex paper showed temperature and frequency dependency. Especially, the permittivity of 0.18mm Nomex paper was 2.4 according to the ASTM condition. And the PDIVs and breakdown voltages were, almost linearly increased with the thickness of Nomex paper and its electrical strength was better than conventional kraft paper.

• Journal of IKEEE
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• v.17 no.3
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• pp.360-364
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• 2013

The maximum breakdown voltage's characteristic within the Super Junction MOSFET structure comes from N-Drift and P-Pillar's charge balance. By developing P-Pillar from Planar MOSFET, it was confirmed that the breakdown voltage is improved through charge balance, and by setting the gate voltage at 10V, the characteristic comparisons of Planar MOSFET and Super Junction MOSFET are shown in picture 6. The results show that it had the same breakdown voltage as Planar MOSFET which increased temperature resistance by 87.4% at $.019{\Omega}cm^2$ which shows that by the temperature resistance increasing, the power module's power dissipation improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.239-239
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• 2013

The peak klystron power for the PAL (Pohang Accelerator Laboratory) XFEL (X-ray Free Electron Laser) is up to 80 MW which is higher than that of PLS-II LINAC. To prevent the RF breakdown such a high power operation, some of RF components need to be redesigned to reduce the surface electric field gradient to be less than the breakdown gradient at the vacuum-metal surface. For instances, the redesign of the Stanford Linear Accelerator Energy Doubler (SLED) system, the directional coupler and 3dB power splitter using the finite-difference time-domain (FDTD) simulation will be presented.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2271-2273
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• 2005

The cyclic aging for 14days is performed in order to remove the large amount of the volatiles contained in freshly manufactured cable. And the accelerated water treeing test(AWTT) is performed to accelerate the occurance of the water tree in the dielectric of XLPE. In this paper, we examined the AC breakdown voltage characteristics of the 22.9kV power cable before and after the cyclic aging for 14days and the AWTT. As the result, the AC breakdown voltage of the TR CNCV-W power cable is higher than that of CNCV-W and FR CNCO-W power cable.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.365-368
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• 2004

Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from $5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$. The thickness of the proposed device also varied from $400{\mu}m\;to\;500{\mu}m$. Due to the charge compensation effects, 4500V of breakdown voltage can be obtained.

• Proceedings of the KSR Conference
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• 2008.11b
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• pp.230-234
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• 2008

Urban Railway was used importantly with transport for several decades. This transportation facilities used electricity. When the breakdown occurs, social, the economic loss is enormous. In addition to, the power equipment was ageing. We need preventive diagnostic monitoring system in order to prevent breakdown of power equipment. In this paper, we investigates characteristic and breakdown type of the Urban Railway power equipment. Through the this research, we can contribute in the operation which power equipment is efficient of the Urban Railway.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.165-169
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the breakdown voltage of the device edge and device unit cells was found to be lower than the 'ideal' breakdown voltage limited by the semi-infinite junction profile. In this paper, Propose the methods for field ring design by DOE (Design of Experimentation). So The field ring can be improve for breakdown voltage and optimization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• Journal of the Korean Society of Safety
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• v.11 no.3
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• pp.81-88
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• 1996

In order to investigate the electrical properties of transformer oils for large power, the characteristics of AC and Impulse breakdown in gap length of 1.0~2.5mm and that of volume resistivity were researched in temperature range of 20~$100^{\circ}C$. An geometrical capacitance of electrode with coaxial cylindrical shape for measuring the volume resistivity was 16pF, and highmegohm meter with model no. VMG-1000 was used, and also the applied voltage were DC 100, 250 and 500V. In the dependance of breakdown characteristics due to electrode gap length, it was confirmed that breakdown voltage was nearly uniform by volume effect according to the increase of gap. In the characteristics for AC breakdown, the dielectric strength was increased to $90^{\circ}C$ but decreased over $90^{\circ}C$, and also in case of impulse breakdown, it was increased to 7$0^{\circ}C$ and at dated $70^{\circ}C$ over in temperature range. The calculated mobility of oils in the characteristics for impulse breakdown were about $10^{-5}$~$10^{-4}cm^2/V{\cdot}S$, and the value of volume resistivity was almost invariable in low temperature range, regardless of voltage by the stable thermal properties, and it indicated a peak at $50^{\circ}C$ and had a sudden change to decrease over that temperature, and also the value of volume resistivity in 250V/mm at $80^{\circ}C$ is suitable for the International electrical standards, it was confirmed.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.