• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.437-440
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• 2000

In this study, the interfacial dielectric breakdown phenomenon of interface between Epoxy and Rubber was discussed, which affects the stability of insulation system of power delivery devices. The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied, the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law and the long time breakdown life time can be evaluated.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.607-611
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• 2000

The characteristics on the interface between Epoxy and EPDM which are materials of the underground insulation systems of power delivery have studied. The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law and the long breakdown life time can be evaluated. AC breakdown strength and life time is improved by oiling to the interface. When the low viscosity oil is spread interface has the highest life time.

• Journal of Electrical Engineering and Technology
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• 제11권6호
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• pp.1735-1743
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• 2016

Insulation of valve-side windings in converter transformer withstands pulsating voltages, which will produce more serious insulation problems. In this paper, the electric breakdown experiments of oil-paper insulation specimens were executed at pulsating voltages and different temperatures. Experiment and analysis results showed that the breakdown voltage decreased with increasing temperature under pulsating voltage. The influence of temperature proves to be more significant once the temperature exceeds a limitation threshold. A fitting formula between breakdown voltage and the temperature was reported. Finally, in order to clearly understand the breakdown properties under pulsating voltage, the electric field distribution and space charge behavior under pulsating voltage at different temperature were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.332-333
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• 2006

The properties of a cable Insulate capacity between surfaces with the variation of the interfacial breakdown, the addition of silicon oil, the variation of pressure and interfacial roughness were investigated. The Insulate trouble of a power cable is out of the interfacial parts, which breakdown the insulate breakdown capacity in a power cable. In this study, the analysis of electric field and the phenomenon of interfacial breakdown were reported by varying the surfaces condition of silicon rubber, XLPE used for connection materials of a power cable.

• 한국전기전자재료학회논문지
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• 제11권7호
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• pp.502-507
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• 1998

The purpose of this study is to investigate the breakdown properties in joint interface of power cables with heat treatment. The specimens have the structure of XLPE/EPDM interface like the joint of distribution power cable. The breakdown characteristics of the SLPE/EPDM joint were studied with crosslinking by=products. AC breakdown voltages were measured with heat treatment time and interfacial materials and crosslinking by-products as testing factors. This study has shown that crosslinking by-product gases play an important role at the insulation properties of cable joints by heating. The dielectric strength shows the lowest values at 4 hours heat treatment. The AC breakdown strength in the untreated sample was increased with heat treatment time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.460-461
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• 2007

In this paper, we studied the properties of a cable insulate capacity between surfaces with the variation of the interfacial breakdown. As a function of silicon oil, the variation of pressure and interfacial roughness were investigated. The insulate trouble of a power cable is out of the interfacial parts, which breakdown the insulate breakdown capacity in a power cable. In this study, the analysis of electric field and the phenomenon of interfacial breakdown were improved by increased interfacial pressure, decreased surface roughness, and oil. And It was shown that interfacial breakdown LSR-XLPE insulators is higher that of EPDM-XLPE.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.249-251
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• 2003

This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when $T_1=T_2=2.5{\mu}m$, $N_1=7{\times}10^{15}/cm^3$ and $N_2=3{\times}10^{15}/cm^3$, respectively Although we used high doping concentration and thin epi-layer thickness, breakdown voltage was increased compared with conventional devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.601-604
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• 2001

22.9 kV CV power cable is very important factor of underground distribution power line. Cyclic aging for 14days is performed to remove a large amount of the volatiles found in freshly manufactured cable. In this paper, we examined AC breakdown characteristics of CV power cable before and after cyclic aging for 14days. As the result, even if there were some exceptions, the AC breakdown voltage before aging was lower than that after aging, but most of the results were that the AC breakdown voltage after aging was lower than that before aging.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.775-778
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• 2000

In this paper, the life-time of macro interface between Epoxy/EPDM which consists in underground power cable joints is predicted. The electrode system of specimen is designed by FEM(finite elements method). The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied, the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law, and the long breakdown life time can be evaluated.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.