Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
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- Pages.249-251
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- 2003
Analysis of the breakdown characteristics of SOI LIGBT with dual-epi layer
이중에피층을 갖는 SOI LIGBT의 항복전압 특성분석
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Kim, Hyoung-Woo
(Power Semiconductor Group, KERI) ;
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Kim, Sang-Cheol
(Power Semiconductor Group, KERI) ;
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Seo, Kil-Soo
(Power Semiconductor Group, KERI) ;
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Kim, Eun-Dong
(Power Semiconductor Group, KERI)
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김형우
(한국전기연구원 전력반도체연구그룹) ;
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김상철
(한국전기연구원 전력반도체연구그룹) ;
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서길수
(한국전기연구원 전력반도체연구그룹) ;
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김은동
(한국전기연구원 전력반도체연구그룹)
- Published : 2003.07.10
Abstract
This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when