• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.222-228
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• 2015

Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device, it is essential to increase its conductance. However, a trade-off relationship between the breakdown voltage and conductance of the device have been the critical difficulty to improve. In this paper, theoretical analysis of electrical benefits on single floating island power MOSFET is proposed. By the method, the optimization point has set defining the doping limit under single floating island structure. The numerical multiple 2.22 was obtained which indicates the doping limit of the original device, improving its ON state voltage drop by 45%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.713-717
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• 2011

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

• Proceedings of the KIPE Conference
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• 2016.11a
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• pp.226-227
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• 2016

본 논문은 SiC Mosfet Gate Driver에서 Overcurrent상황 발생시 Mosfet 양단의 전압을 검출함으로써 스위칭 소자를 보호하는 Desaturation detction circuit에 대해 다룬다. IGBT와 다르게 SiC Mosfet의 경우 ohmic 영역과 saturation영역의 구분이 명확하지 않기 때문에 과전류 발생시 Mosfet 양단 전압을 검출하는데 어려움이 있다. 따라서 이를 보완하기 위하여 Mosfet drain측에 새로운 회로를 추가로 설계함으로써 이를 보완하여 효과적으로 양단전압을 검출한다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.3
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• pp.163-170
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• 1987

It is known that reactive component of AC power in the power system gives no energy to outside and cuses enlargiment of power apparatus, voltage fluctuation and unstability of power system. The power conversion system and control system which are composed of power semiconductor devices such as tyristor, transistor, GTO and so on have been appeared as new sources of reactive power. So the cmpensation of reactive power in power semiconductor systems is one of impending problem on the point of energy conservation and inprovement of power factor. This paper treates the fundamental review of the current type power compensation system that compensates the reactive power by MOSFET inverter. This inverter detects not only the reactive power of fundamental wave but also that of all harmoics created in the power semiconductor system and is scheduled to control by sampled value.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.46.4-46
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• 2001

This paper presents a Five-Switch Converter (FSC) circuit that can operate like a full-bridge PWM converter for driving the DC motor in bidirectional. One of the main advantages of this circuit is to reduce the on-off switching number of power MOSFET. In stead of turning on-off simultaneously two of the four power MOSFET´s in a switching period, this circuit operates only one power MOSFET, while continuously leaving another two on and the other two off in the switching period. Consequently ...

• Journal of Power Electronics
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• v.18 no.4
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• pp.985-996
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• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• Journal of IKEEE
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• v.19 no.1
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• pp.110-117
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• 2015

In this paper, a novel trench power MOSFET using a Separate-W-gated technique MOSFET (SWFET) is proposed. Because the SWFET has a very low $Q_{GD}$ compared to other forms of technology, it can be applied to high-speed power systems. The results found that the SWFET-applied $Q_{GD}$ was decreased by 40% when compared to simply using the more conventional trench gate MOSFET. $C_{ISS}$ (input capacitance : $C_{GS}+C_{GD}$), $C_{OSS}$ (output capacitance : $C_{GD}+C_{DS}$) and $C_{RSS}$ (reverse recovery capacitance : $C_{GD}$) were improved by 24%, 40%, and 50%, respectively. The switching characteristics of the inverter circuit shows a 24.9% enhancement of reverse recovery time, and the power efficiency of the DC-DC buck converter increased by 14.2%. In addition, the proposed SWFET does not require additional process steps and There was no degradation in the electrical performance of the current-voltage and on-resistance.

• Journal of Power Electronics
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• v.14 no.2
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• pp.265-270
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• 2014

In terms of power loss, a MOSFET has two advantages over an IGBT with an antiparallel diode: purely resistive without an offset voltage in conduction and no tail current at turn-off. However, the reverse recovery characteristic of the body diode is so poor that MOSFETs have not yet been available for high-voltage power converters with bidirectional power flow legs. This paper introduces how MOSFETs can be fully applied to high-voltage power converters with bidirectional power flow legs in order to achieve high efficiency. With a bidirectional DC-DC converter with one leg as the simplest example, the basic circuit topology and operating principle are described in detail. The high efficiency and stable operation of the proposed converter are validated through experiments with a 1.5 kW prototype.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1109-1112
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• 2003

본 연구는 switching mode 의 Power NMOSFET failure mode 에 관하여 분석하고 원인을 규명하였다. 분석된 power NMOSFET은 30V급이며, vender A의 상용화 제품이다. 발생한 failure mode는 power switch 회로에서 특정 ID 를 detect 하지 못하는 mode 였다. 측정결과 source voltage 가 저하되었으며, power NMOSFET DC 동작특성 분석 결과 Vgs 변화에 따라 Id 가 저하되었다. Fail 된 power MOSFET 특성값 reference는 동일 LOT의 양품을 선정하였다. De-cap후 Inversion 과 Accumulation mode 별로 Photoemission spectrum analyzer(PSA) 분석 방법을 적용하였다. 결과 accumulation mode 에서 intensity가 감소하였으며, forward diode mode에서 국소적으로 변화하는 영역이 검출되었다. SEM 분석결과 gate metal 과 source metal 의 micro-contact 이 이루어져 있었다. 이 경우 gate metal 과 source metal 사이 close loop 를 형성하여 gate charge량을 변화시켜 power NMOSFET의 출력을 저하하는 failure mode가 발생됨을 분석할 수 있었다.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.125-130
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• 2009

This paper reviews the characteristics technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.