• 한국표면공학회지
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• 제48권5호
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• pp.245-252
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• 2015

In recent years, the cleaning and activation technology of surfaces using atmospheric plasma as well as the deposition technology for coating using atmospheric plasma have been demonstrated conclusively and drawn increasing industrial attention. Especially, due to the simplicity, the technology using atmospheric plasma enhanced chemical vapor deposition has been widely studied from many researchers. The plasma source type commonly used as the stabilization of diffuse glow discharges for atmospheric pressure plasma enhanced chemical vapor deposition pressure is the dielectric barrier discharge. In this review paper, some kinds of modified dielectric barrier discharge type will be presented. And, the characteristics of silicon based compound such as SiOx and SiNx deposited using atmospheric plasma enhanced chemical vapor system will be discussed.

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1357-1359
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• 2009

Many researchers studied cell culturing on surfaces with chemical functional groups. Previously, we reported surface properties of plasma polymerized ethylenediamine (PPEDA) films deposited by plasma enhanced chemical vapor deposition with various plasma conditions. Surface properties of PPEDA films can be controlled by plasma power during deposition. In this work, to analyze correlation of cell adherence/proliferation with surface property, we cultured rat intestinal epithelial cells-18 on the PPEDA films deposited with various plasma powers. It was shown that as plasma power was decreased, density of cells cultured on the PPEDA film surface was increased. Our findings indicate that plasma power changed the amine density of the PPEDA film surface, resulting in density change of cells cultured on the PPEDA film surface.

• 한국재료학회지
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• 제29권11호
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• pp.715-719
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• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

• 한국표면공학회지
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• 제32권3호
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• Korean Journal of Chemical Engineering
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• 제35권12호
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• pp.2474-2479
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• 2018

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel ($Ni(EtCp)_2$) and $O_2$ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, $O_2$ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of $100-325^{\circ}C$ and a growth rate of $0.037{\pm}0.002nm$ per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.

• Applied Science and Convergence Technology
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• 제25권4호
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• pp.73-76
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• 2016

Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

• ETRI Journal
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• 제27권1호
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• pp.118-121
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• 2005

Silicon dioxide ($SiO_2$) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of $100\;to\;250^{\circ}C$, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of $SiO_2$ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A $SiO_2$ film grown at $250^{\circ}C$ exhibits a much lower leakage current than that grown at $100^{\circ}C$ due to its high film density and the fact that it contains deeper electron traps.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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• pp.108-110
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• 2006

A prediction model of charge concentration of silicon nitride (SiN) thin films was constructed by using neural network and genetic algorithm. SIN films were deposited by plasma enhanced chemical vapor deposition and the deposition process was characterized by means of $2^{6-1}$ fractional factorial experiment. Effect of five training factors on the model prediction performance was optimized by using genetic algorithm. This was examined as a function of the learring rate. The root mean squared error of optimized model was 0.975, which is much smaller than statistical regression model by about 45%. The constructed model can facilitate a Qualitative analysis of parameter effects on the charge concentration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.421-421
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• 2012

Graphene has drawn enormous attention owing to its outstanding properties, such as high charge mobility, excellent transparence and mechanical property. Synthesis of Graphene by chemical vapor deposition (CVD) is an attractive way to produce large-scale Graphene on various substrates. However the fatal limitation of CVD process is high temperature requirement(around $1,000^{\circ}C$), at which many substrates such as Al substrate cannot endure. Therefore, we propose plasma enhanced CVD (PECVD) and decrease the temperature to $400^{\circ}C$. Fig. 1 shows the typical structure of RF-PECVD instrument. The quality of Graphene is affected by several variables. Such as plasma power, distance between substrate and electronic coil, flow rate of source gas and growth time. In this study, we investigate the influence of these factors on Graphene synthesis in vacuum condition. And the results were checked by Raman spectra and conductivity measurement.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.22-27
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• 2013

Detailed study on how the plasma process during the sidewall spacer formation suppresses the formation of silicide is done. In non-patterned wafer test, it is found that both fluorocarbon reactive ion etch (RIE) and TEOS plasma-enhanced deposition processes modify the Si surface so that the silicide reaction is chemically inhibited or suppressed. In order to investigate the cause of the chemical modification, we analyze the elements on the silicon surface through Auger Electron Spectroscopy (AES). From the AES result, it is found that the carbon induces chemical modification which blocks the reaction between silicon and nickel. Thus, protecting the surface from the carbon-containing plasma process prior to nickel deposition appears critical in successful silicide formation.